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Ordering number : EN9084A
2SJ629
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SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
2SJ629 General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (600mm2!0.8mm)
Tc=25°C
Ratings
--12
±8
--4.5
--18
1.3
3.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : MC
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=--1mA, VGS=0V
VDS=--12V, VGS=0V
VGS=±6.4V, VDS=0V
VDS=--6V, ID=--1mA
VDS=--6V, ID=--2.2A
ID=--2.2A, VGS=--4.5V
ID=--1.1A, VGS=--2.5V
ID=--0.5A, VGS=--1.8V
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
--12
--0.3
3.4
Ratings
typ
max
Unit
V
--10 µA
±10 µA
--1.0 V
5.7 S
75 98 m
110 155 m
150 225 m
450 pF
100 pF
85 pF
15 ns
140 ns
58 ns
52 ns
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82506 MS IM TC-00000118 / 82605PA MS IM TA-100585 No.9084-1/4
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Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm (typ)
7007A-003
Top View
4.5
1.6
1
0.4
2
0.5
1.5
3.0
3
2SJ629
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=--6V, VGS=--4.5V, ID=--4.5A
VDS=--6V, VGS=--4.5V, ID=--4.5A
VDS=--6V, VGS=--4.5V, ID=--4.5A
IS=--4.5A, VGS=0V
min
Switching Time Test Circuit
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Ratings
typ
6.5
0.8
2.0
--0.95
max
--1.5
Unit
nC
nC
nC
V
1.5
0.4
VIN
0V
--4.5V
VIN
PW=10µs
D.C.1%
G
VDD= --6V
ID= --2.2A
RL=2.73
D VOUT
2SJ629
P.G 50S
0.75
Bottom View
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
ID -- VDS
--2.5V
--1.8V
--1.5V
VGS= --1.0V
--0.1
--0.2
--0.3
--0.4
--0.5
Drain-to-Source Voltage, VDS -- V IT04325
--3.0
VDS= --6V
--2.5
ID -- VGS
--2.0
--1.5
--1.0
--0.5
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8
Gate-to-Source Voltage, VGS -- V IT04326
No.9084-2/4
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RDS(on) -- VGS
250
200
150
ID= --1.1A --2.2A
100
50
2SJ629
Ta=25°C
300
250
200
150
100
50
RDS(on)ww--wT.DaataSheet4U.com
ID=
ID=
--0.5A,
--1.1A,
VGS=
VGS=
--1.8V
--2.5V
ID= --2.2A, VGS= --4.5V
0
0 --1 --2 --3 --4 --5 --6 --7 --8
Gate-to-Source Voltage, VGS -- V IT10073
yfs-- ID
3
VDS= --6V
2
10
7 25°C
5
3
Ta= --25°C
75°C
2
1.0
7
5
--0.1
23
5 7 --1.0
23
57
Drain Current, ID -- A
IT04329
5
VDD= --6V
SW Time -- ID
3 VGS= --4.5V
2
tr
100
td(off)
7
5 tf
3
2
td(on)
10
--0.1
23
5 7 --1.0
23
57
Drain Current, ID -- A
IT04331
--4.5
VDS= --6V
VGS -- Qg
--4.0 ID= --4.5A
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
1234567
Total Gate Charge, Qg -- nC
IT10075
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT10074
IS -- VSD
--10
VGS=0V
7
5
3
2
--1.0
7
5
3
2
--0.1
--0.4
1000
7
5
--0.6 --0.8 --1.0 --1.2
Diode Forward Voltage, VSD -- V IT04330
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
3
2
Coss
100
7 Crss
5
3
0 --2 --4 --6 --8 --10 --12
Drain-to-Source Voltage, VDS -- V IT04332
ASO
3
2
--10 IDP= --18A
7
5
ID= --4.5A
10ms100µs
10µs
1ms
3
2
--1.0
DC opera1t0io0nms
7
5
3
2 Operation in this
--0.1 area is limited by RDS(on).
7
5
3
2 Tc=25°C
Single pulse
--0.01
--0.01 2 3 5 7 --0.1
23
5 7 --1.0
23
5 7 --10
2
Drain-to-Source Voltage, VDS -- V IT10076
No.9084-3/4
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2SJ629
PD -- Ta
1.4
1.3
1.2
1.0
0.8
0.6
0.4
0.2
Mounted on a ceramic board (600mm 2!0.8mm)
PD -- wTwc w.DataSheet4U.com
4.0
3.5
3.0
2.0
1.0
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT10077
0
0 20 40 60 80 100 120 140 160
Case Temperature, Ta -- °C
IT10072
Note on usage : Since the 2SJ629 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of August, 2006. Specifications and information herein are subject
to change without notice.
PS No.9084-4/4
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