J585LS.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 J585LS 데이타시트 다운로드

No Preview Available !

www.DataSheet.co.kr
Ordering number:ENN6412
P-Channel Silicon MOSFET
2SJ585LS
Ultrahigh-Speed Switching Applications
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· Micaless package facilitating mounting.
Package Dimensions
unit:mm
2078B
[2SJ585LS]
10.0
3.2
4.5
2.8
0.9
1.2
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Tc=25°C
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
Conditions
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
ID=–1mA, VGS=0
IG=±100µA, VDS=0
VDS=–250V, VGS=0
VGS=±25V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–3.5A
ID=–3.5A, VGS=–10V
0.75
1 23
2.55 2.55
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI-LS
Ratings
–250
±30
–6.5
–26
2.0
30
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
–250
V
±30 V
–100 µA
±10 µA
–3.5 –5.0 V
2.4 4.0
S
0.56 0.7
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80300TS (KOTO) TA-2756 No.6412–1/4
Datasheet pdf - http://www.DataSheet4U.net/

No Preview Available !

www.DataSheet.co.kr
2SJ585LS
Continued from preceding page.
Parameter
Symbol
Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
Marking : J585
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VDS=–20V, f=1MHz
VDS=–20V, f=1MHz
VDS=–20V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=–100V, VGS=–10V, ID=–6.5A
VDS=–100V, VGS=–10V, ID=–6.5A
VDS=–100V, VGS=–10V, ID=–6.5A
IS=–6.5A, VGS=0
Switching Time Test Circuit
VDD= --100V
VIN
0V
--10V
PW=10µs
D.C.1%
VIN
G
ID= --3.5A
RL=28.6
D VOUT
P.G 50
2SJ585LS
S
Ratings
min typ max
Unit
720 pF
190 pF
80 pF
20 ns
60 ns
75 ns
37 ns
35 nC
6 nC
18 nC
–0.9 –1.5 V
ID -- VDS
--10
--9
--8
--7V
--7
--6
--5
--4
--3 --6V
--2
--1
--5V
0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Drain-to-Source Voltage, VDS – V IT01509
RDS(on) -- VGS
1.2
Tc=25°C
1.1 ID= --3.5A
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
--4
--6 --8 --10 --12 --14 --16 --18 --20
Gate-to-Source Voltage, VGS – V IT01511
--13
--12 VDS= --10V
ID -- VGS
--11
--10
--9
--8
--7
--6
--5
--4
--3
--2
--1
0
0 --1 --2 --3 --4 --5 --6 --7 --8
Gate-to-Source Voltage, VGS – V
1.2
VGS= --10V
RDS(on) -- Tc
ID= --3.5A
1.0
75°C
--9 --10
IT01510
0.8
0.6
0.4
0.2
0
--50 --25
0 25 50 75 100 125 150
Case Temperature, Tc – ˚C
IT01512
No.6412–2/4
Datasheet pdf - http://www.DataSheet4U.net/

No Preview Available !

www.DataSheet.co.kr
2SJ585LS
yfs-- ID
10
7 VDS= --10V
5
3
2
Tc= --25°C
75°C
1.0 25°C
7
5
3
2
0.1
--0.1
1000
7
5
3
2
100
7
5
3
2
23
tf
5 7 --1.0
23 5
Drain Current, ID – A
SW Time -- ID
7 --10
2
IT01513
VDD= --100V
VGS= --10V
td(off)
tr td(on)
10
7
5
3
2
1.0
--0.1
23
--10
VDS= --100V
--9 ID= --6.5A
5 7 --1.0
23
Drain Current, ID – A
VGS -- Qg
--8
5 7 --10
IT01515
--7
--6
--5
--4
--3
--2
--1
0
0 5 10 15 20 25 30 35
Total Gate Charge, Qg – nC
IT01517
2.5 PD -- Ta
--10
7 VGS = 0
5
3
2
IF -- VSD
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
0
10000
7
5
3
2
--0.3 --0.6 --0.9
Diode Forward Voltage, VSD – V
Ciss, Coss, Crss -- VDS
--1.2
IT01514
f=1MHz
1000
7
5
3
2
100
7
5
3
2
Ciss
Coss
Crss
10
0 --5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS – V IT01516
ASO
--100
7
5
3
IDP= --26A
2
--10 ID= --6.5A
7
5
3
2
--1.0
7
5
DC op1e0r01am0timos1nsms100µs10µs
3 Operation in this
2 area is limited by RDS(on).
--0.1
7
5
3
2
Tc=25°C
Single pulse
--0.01
--1.0 2 3 5 7 --10 2 3 5 7 --100 2 3
Drain-to-Source Voltage, VDS – V
5 7 --1000
IT01518
PD -- Tc
40
35
2.0
30
1.5 25
20
1.0 15
0.5
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – ˚C
IT01520
10
5
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc – ˚C
IT01519
No.6412–3/4
Datasheet pdf - http://www.DataSheet4U.net/