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Naina Semiconductor Ltd.
200NS(R)
Standard Recovery Diodes (Stud and Flat Base Type)
Features
Diffused Series
Industrial grade
Available in Normal and Reverse polarity
Metric and UNF thread type
Electrical Specifications (TE = 250C, unless otherwise noted)
Symbol
Parameters
Values Units
IF(AV)
Maximum avg. forward current @ TE =
150OC
200
A
VFM
Maximum peak forward voltage drop
@ rated IF(AV)
1.4
V
IFSM
Maximum peak one cycle (non-rep)
surge current @ 10 msec
4000 A
IFRM
Maximum peak repetitive surge
current
11000 A
I2t
Maximum I2t rating (non-rep) for 5 to
10 msec
92500 A2sec
DO-205AA (DO-8)
Electrical Ratings (TE = 250C, unless otherwise noted)
Type Voltage
number Code
VRRM, Maximum
repetitive peak
reverse voltage
(V)
VR(RMS), Maximum
RMS reverse
voltage
(V)
200NS(R)
10
20
40
60
80
100
120
140
160
100
200
400
600
800
1000
1200
1400
1600
70
140
280
420
560
700
840
980
1120
VR, Maximum
DC blocking
voltage
(V)
100
200
400
600
800
1000
1200
1400
1600
Recommended RMS
working voltage
(V)
40
80
160
240
320
400
480
560
640
IR(AV), Maximum
avg. reverse
leakage current
(µA)
200

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Naina Semiconductor Ltd.
Thermal & Mechanical Specifications (TE = 250C, unless otherwise noted)
Symbol
Parameters
Rth(JC)
Maximum thermal resistance, junction to case
TJ Operating junction temperature range
Tstg Storage temperature
Mounting torque (non-lubricated threads)
W Approximate allowable weight
200NS(R)
Values
0.23
-65 to 150
-65 to 200
2.0 (min) – 3.0 (max)
150
Units
0C/W
0C
0C
G
ALL DIMENSIONS IN MM