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Naina Semiconductor Ltd.
Diode – Diode Module
Features
Improved glass passivation for high reliability
Exceptional stability at high temperatures
High di/dt and dv/dt capabilities
Low thermal resistance
70NDD
Maximum Ratings (TA = 250C unless otherwise noted)
Parameter
Symbol Values Units
Maximum average forward
current @ TJ = 850C
IF(AV)
70
A
Maximum average RMS
forward current
IF(RMS)
110
A
Maximum non-repetitive
surge current @ t = 10ms
Maximum I2t for fusing @ t =
10ms
IFSM
I2t
1800
15
A
kA2s
M1 PACKAGE
Thermal & Mechanical Specifications (TA = 250C unless otherwise noted)
Parameter
Symbol
Operating junction temperature range
TJ
Thermal resistance, junction to case
Rth(JC)
Values
-65 to +125
0.33
Units
0C
0C/W
Electrical Characteristics (TA = 25OC unless otherwise noted)
Parameter
Maximum average on-state current, 1800C sinusoidal
Maximum repetitive peak reverse voltage range
Forward voltage drop
RMS isolation voltage
Symbol
IT(max)
VRRM
VFM
VISO
Values
70
200 to 1600
1.4
2500
Units
A
V
V
V
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com

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Naina Semiconductor Ltd.
70NDD
Diode Configuration
ALL DIMENSIONS ARE IN MM
2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com