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PJD09N03
25V N-Channel Enhancement Mode MOSFET
FEATURES
• RDS(ON), VGS@10V,IDS@30A=9m
• RDS(ON), VGS@4.5V,IDS@30A=12m
• Advanced trench process technology
• High Density Cell Design For Uitra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request
MECHANICALDATA
• Case: TO-252 Molded Plastic
• Terminals : Solderable per MIL-STD-202,Method 208
• Marking : 09N03
TO-252
Gate
Drain
Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
Drain-Source Voltage
PA RA ME TE R
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1)
Maximum Power Dissipation
Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e
Avalanche Energy with Single Pulse
ID=23A, VDD=25V, L=0.5mH
Junction-to-Case Thermal Resistance
TA =25OC
TA =75OC
Junction-to Ambient Thermal Resistance(PCB mounted)2
S ym b o l
VDS
VGS
ID
ID M
PD
T ,T
J STG
EAS
RθJ C
RθJ A
Limit
25
+20
50
240
45
26
-55 to + 150
130
2.8
50
Uni ts
V
V
A
A
W
OC
mJ
O C /W
O C /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-MAY.29.2006
PAGE . 1
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PJD09N03
ELECTRICALCHARACTERISTICS
Static
Parameter
S ym b o l
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Dynamic
BVDSS
V
G S (th)
RD S (o n)
RD S (o n)
ID S S
IG S S
gfS
To ta l Ga te C ha r g e
Qg
Te s t C o nd i ti o n
V G S =0 V, ID =2 5 0 uA
V =V , I =250uA
DS GS D
VGS =4.5V, ID =30A
VGS =10V, ID =30A
VD S =25V, VGS =0V
VGS =+20V, VD S =0V
V D S =1 0 V, ID =1 5 A
V D S =1 5 V,ID =1 5 A ,V G S =5 V
Gate-Source Charge
Gate-Drain Charge
Turn-On D e la y Ti me
Turn-On Ri s e Ti me
Turn-Off D e la y Ti me
Turn-Off F a ll Ti me
Input C apaci tance
Output Capacitance
Re ve rs e Tra ns fe r C a p a c i ta nc e
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
Qg s
Qg d
Td (o n)
trr
td (o ff)
tf
Ciss
Coss
Crss
Is
VSD
V D S =1 5 V, ID =1 5 A
V G S =10V
VD D =15V , RL=15
ID =1A , VGE N=10V
R
G
=3.6
VD S =15V, VGS =0V
f=1.0MHZ
-
IS =3 0 A , V G S =0 V
Mi n.
25
1
-
-
-
-
25
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ .
M a x.
Uni ts
- -V
- 3V
9.5 12.0
m
6.5 9.0
- 1 uA
-
+100
nA
- -S
16.0
27.5
3.5
7.2
10.0
11.0
35
11.2
1250
240
185
-
-
-
-
13.0
14.0
45
15.5
-
-
-
nC
ns
pF
-
0.94
30
1.2
A
V
Switching
Test Circuit
VIN
RG
VDD
RL
VOUT
Gate Charge
Test Circuit
VGS
1mA
RG
VDD
RL
STAD-MAY.29.2006
PAGE . 2
Datash

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PJD09N03
Typical Characteristics Curves (TA=25OC,unless otherwise noted)
80
VGS=10V, 6.0V, 5.0V, 4.5V, 4.0V
60 3.5V
40
3.0V
20
2.5V
0
0 12 34 5
VDS - Drain-to-Source Voltage (V)
Fig. 1F-TIYGP.1IC-ALOFuOtpRuWtARCDhCaHraAcRteArCisTtEicRISTIC
20
15
10 VGS=4.5V
5 VGS=10V
0
0 20 40 60 80
ID - Drain Current (A)
FIG.3- On Resistance vs Drain Current
1.6
VGS=10V
ID=30A
1.4
1.2
1
0.8
0.6
-50
-25 0 25 50 75 100 125
TJ - Junction Temperature (oC)
150
FIG.5- On Resistance vs Junction Temperature
80
VDS=10V
60
40
TJ=125OC
20
TJ=25OC
TJ=-55OC
0
1.5
2 2.5 3 3.5 4
VGS - Gate-to-Source Voltage (V)
4.5
FIG.2- Transfer Characteristic
50
ID=30A
40
30
20
10
0
2
T1J2=51oC25OC
TTJJ==25oOCC
4 68
VGS - Gate-to-Source Voltage (V)
10
FIG.4- On Resistance vs Gate to Source Voltage
STAD-MAY.29.2006
PAGE . 3
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PJD09N03
Vgs
Qg
10
VDS=15V
ID=15A
8
6
4
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Vgs(th)
Qsw
Qg(th)
Qgs
Qgd
2
0
0 5 10 15 20 25 30
Qg Qg - Gate Charge (nC)
Fig.6 - Gate Charge Waveform
Fig.7 - Gate Charge
1.3 ID=250uA
1.2
1.1
1
0.9
0.8
0.7
0.6
-50
-25 0 25 50 75 100 125
TJ - Junction Temperature (oC)
150
Fig.8 - Threshold Voltage vs Temperature
29 ID=250uA
28
27
26
25
-50
-25 0 25 50 75 100 125
TJ - Junction Temperature (oC)
150
Fig.9 - Breakdown Voltage vs Junction Temperature
100
VGS=0V
10
TJ=125OC
1
TJ=25OC
TJ=-55OC
0.1
0.2 0.4 0.6 0.8
1
1.2 1.4
VSD - Source-to-Drain Voltage (V)
Fig.10 - Source-Drain Diode Forward Voltage
LEGALSTATEMENT
Copyright PanJit International, Inc 2006
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-MAY.29.2006
PAGE . 4