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New Product
BU1006A thru BU1010A
Vishay General Semiconductor
Enhanced PowerBridge® Rectifiers
PowerBridge®
+
~~ -
Case
Style
BU
- ~~+
+~~ -
* Tested to UL standard for safety electrically isolated semiconductor
devices. UL 1557 4th edition.
Dielectric tested to maximum case, storage and junction
temperature to 150 °C to withstand 1500 V.
Epoxy meets UL 94 V-0 flammability rating.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
IR
VF at IF = 5 A
TJ max.
10 A
600 V, 800 V, 1000 V
90 A
5 µA
0.94 V
150 °C
FEATURES
• UL recognition file number E309391
(QQQX2) UL 1557 (see *)
• Thin single in-line package
• Available for BU-5S lead forming option
(part number with “5S” suffix, e.g.
BU1006A5S)
• Superior thermal conductivity
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
definition
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for switching power supply, home
appliances and white-goods applications.
MECHANICAL DATA
Case: BU
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Average rectified forward current (Fig. 1, 2)
TC = 90 °C (1)
TA = 25 °C (2)
VRRM
IO
Non-repetitive peak forward surge current
8.3 ms single sine-wave, TJ = 25 °C
Rating for fusing (t < 8.3 ms) TJ = 25 °C
Operating junction and storage temperature range
IFSM
I2t
TJ, TSTG
Notes
(1) With 60 W air cooled heatsink
(2) Without heatsink, free air
BU1006A
600
BU1008A
800
10
3.0
BU1010A
1000
90
33
- 55 to + 150
UNIT
V
A
A
A2s
°C
Document Number: 89294 For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 15-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/

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New Product
BU1006A thru BU1010A
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Maximum instantaneous forward
voltage per diode (1)
IF = 5.0 A
TA = 25 °C
TA = 125 °C
VF
1.02
0.94
Maximum reverse current per diode
Typical junction capacitance per diode
Note
rated VR
4.0 V, 1 MHz
TA = 25 °C
TA = 125 °C
IR
CJ
-
45
30
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
MAX.
1.10
1.00
5.0
250
-
UNIT
V
µA
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BU1006A
BU1008A
Typical thermal resistance
RJC (1)
RJA (2)
3.0
20
Notes
(1) With 60 W air cooled heatsink
(2) Without heatsink, free air
BU1010A
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
BU1006A-M3/45
4.48
45
BU1006A-M3/51
4.48
51
BU1006A5S-M3/45
4.48
45
BASE QUANTITY
20
250
20
DELIVERY MODE
Tube
Paper tray
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
10
8 With Heatsink
Sine-Wave, R-Load
TC Measured at Device Bottom
6
TC TC
4
2
0
0 20 40 60 80 100 120 140 160
Case Temperature (°C)
Figure 1. Derating Curve Output Rectified Current
4
3
2
1 Without Heatsink
Sine-Wave, R-Load
Free Air, TA
0
0 25 50 75 100 125
Ambient Temperature (°C)
150
Figure 2. Forward Current Derating Curve
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For technical questions within your region, please contact one of the following: Document Number: 89294
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 15-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/

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New Product
BU1006A thru BU1010A
Vishay General Semiconductor
24
20
16
12
8
4
0
0 1 2 3 4 5 6 7 8 9 10 11
Average Forward Current (A)
Figure 3. Forward Power Dissipation
100
TJ = 150 °C
10
1 TJ = 125 °C
0.1
TJ = 25 °C
0.01
0.2
0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
1.4
Figure 4. Typical Forward Characteristics Per Diode
1000
100
10
TJ = 150 °C
TJ = 125 °C
1
0.1 TJ = 25 °C
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Reverse Characteristics Per Diode
100
10
0.1
1 10
Reverse Voltage (V)
100
Figure 6. Typical Junction Capacitance Per Diode
Document Number: 89294 For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 15-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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New Product
BU1006A thru BU1010A
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.125 (3.2) x 45°
Chamfer
Case Type BU
0.880 (22.3)
0.860 (21.8)
0.160 (4.1)
0.140 (3.5)
0.020R (TYP.)
0.310 (7.9)
0.290 (7.4)
0.080 (2.03)
0.060 (1.52)
0.075
(1.9) R
+~
~
-
0.085 (2.16)
0.065 (1.65)
0.050 (1.27)
0.040 (1.02)
0.100 (2.54)
0.085 (2.16)
0.190 (4.83)
0.210 (5.33)
0.080 (2.03)
0.065 (1.65)
Polarity shown on front side of case, positive lead beveled corner
0.161 (4.10)
0.142 (3.60)
TYP.
View A
TYP.
0.048 (1.23)
0.039 (1.00)
0.740 (18.8)
0.720 (18.3)
0.710 (18.0)
0.690 (17.5)
0.028 (0.72)
0.020 (0.52)
0.055 (1.385) REF.
0.64 (16.28) REF.
R 0.11
(2.78) REF.
0.62 (15.78) REF.
R 0.10
(2.60) REF.
0.094 (2.39) x 45° REF.
0.055 (1.385) REF.
www.vishay.com
For technical questions within your region, please contact one of the following: Document Number: 89294
4
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 15-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/

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New Product
BU1006A thru BU1010A
Vishay General Semiconductor
FORMING SPECIFICATION: BU-5S in inches (millimeters)
0.125 (3.2) x 45°
Chamfer
0.880 (22.3)
0.860 (21.8)
0.160 (4.1)
0.140 (3.5)
0.020R (TYP.)
0.310 (7.9)
0.290 (7.4)
0.080 (2.03)
0.060 (1.52)
0.075
(1.9) R
0.085 (2.16)
+ ~~ -
0.065 (1.65)
0.100 (2.54)
0.085 (2.16)
0.050 (1.27)
0.040 (1.02)
0.213 (5.40)
0.173 (4.40)
0.417 (10.60)
0.370 (9.40)
0.080 (2.03)
0.065 (1.65)
0.319 (8.10)
0.272 (6.90)
0.319 (8.10)
0.272 (6.90)
0.161 (4.10)
0.142 (3.60)
TYP.
0.219 (5.55)
MAX.
0.134 (3.40)
0.087 (2.20)
0.740 (18.8)
0.720 (18.3)
TYP.
0.315 (8.0)
0.276 (7.0)
0.028 (0.72)
0.020 (0.52)
APPLICATION NOTE
(1) Device UL approved for safety use dielectric strength of 1500 V.
(2) If device is mounted in Floating Ground (F. G.) application, insulator is recommended to use to meet safety requirement.
(3) Heat sink shape recommendation:
(3)
Heatsink
2.5 mm MIN.
By Safety Requirements
2.5 mm MIN.
Document Number: 89294 For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 15-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/