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DG9262, DG9263
Vishay Siliconix
Low-Voltage Dual SPST Analog Switch
DESCRIPTION
The DG9262, DG9263 is a single-pole/single-throw
monolithic CMOS analog device designed for high
performance switching of analog signals. Combining low
power, high speed (tON: 35 ns, tOFF: 20 ns), low
on-resistance (RDS(on): 40 ) and small physical size, the
DG9262, DG9263 is ideal for portable and battery powered
applications requiring high performance and efficient use of
board space.
The DG9262, DG9263 is built on Vishay Siliconix’s low
voltage BCD-15 process. Minimum ESD protection, per
Method 3015.7 is 2000 V. An epitaxial layer prevents
latchup. Break-before make is guaranteed for DG9262,
DG9263.
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
BENEFITS
• Reduced Power Consumption
• Simple Logic Interface
• High Accuracy
• Reduce Board Space
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Low Voltage Operation (- 2.7 V to 5 V)
• Low On-Resistance - RDS(on): 40
• Fast Switching - tON: 35 ns, tOFF: 20 ns
• Low Leakage - ICOM(on): 200-pA max.
• Low Charge Injection - QINJ: 1 pC
• Low Power Consumption
• TTL/CMOS Compatible
• ESD Protection > 2000 V (Method 3015.7)
• Available in MSOP-8 and SOIC-8
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Battery Operated Systems
• Portable Test Equipment
• Sample and Hold Circuits
• Cellular Phones
• Communication Systems
• Military Radio
• PBX, PABX Guidance and Control Systems
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
NC1
COM1
IN2
GND
1
2
3
4
8 V+
7 IN1
6 COM2
5 NC2
NO1
COM1
IN2
GND
1
2
3
4
8 V+
7 IN1
6 COM2
5 NO2
Top View
Top View
TRUTH TABLE - DG9262
Logic
0
1
Logic “0” 0.8 V
Logic “1” 2.4 V
Switch
On
Off
TRUTH TABLE - DG9263
Logic
0
1
Logic “0” 0.8 V
Logic “1” 2.4 V
Switch
Off
On
ORDERING INFORMATION
Temp Range
Package
- 40 °C to 85 °C
SOIC-8
MSOP-8
* Pb containing terminations are not RoHS compliant, exemptions may apply
Part Number
DG9262DY-E3
DG9262DY-T1
DG9262DY-T1-E3
DG9263DY-E3
DG9263DY-T1
DG9263DY-T1-E3
DG9262DQ-T1-E3
DG9263DQ-T1-E3
Document Number: 70862
www.vishay.com
S11-1229–Rev. D, 20-Jun-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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DG9262, DG9263
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Reference V+ to GND
IN, COM, NC, NOa
Continuous Current (Any Terminal)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
ESD (Method 3015.7)
Storage Temperature (D Suffix)
Power Dissipation (Packages)b
8-Pin Narrow Body SOICc
Limit
- 0.3 to + 13
- 0.3 to (V+ + 0.3)
± 20
± 40
> 2000
- 65 to 125
400
Unit
V
mA
V
°C
mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/°C above 75 °C.
SPECIFICATIONS (V+ = 3 V)
Parameter
Analog Switch
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3 V, ± 10 %, VIN = 0.8 V or 2.4 Ve
Temp.a
D Suffix
- 40 °C to 85 °C
Min.b Typ.c Max.b
Unit
Analog Signal Ranged
Drain-Source On-Resistance
RDS(on)Matchd
RDS(on) Flatnessd
VANALOG
RDS(on)
RDS(on)
RDS(on)
Flatness
VNO or VNC = 1.5 V, V+ = 2.7 V
ICOM = 5 mA
VNO or VNC = 1.5 V
VNO or VNC = 1 and 2 V
Full
Room
Full
Room
Room
0
3V
50 80
140
0.4 2
48
NO or NC Off Leakage
Currentg
INO/NC(off)
VNO or VNC = 1 V/2 V, VCOM = 2 V/1 V
Room - 100
Full - 5000
5
100
5000
COM Off Leakage Currentg
ICOM(off)
VCOM = 1 V/2 V, VNO or VNC = 2 V/1 V
Room - 100
Full - 5000
5
100
5000
pA
Channel-On Leakage Currentg ICOM(on)
VCOM = VNO or VNC = 1 V/2 V
Room - 200 10
Full - 10 000
200
10 000
Digital Control
Input Current
Dynamic Characteristics
IINL or IINH
Full 1 µA
Turn-On Time
Turn-Off Time
Charge Injectiond
Off-Isolation
Crosstalk
NC and NO Capacitance
Channel-On Capacitance
COM-Off Capacitance
Power Supply
tON
tOFF
QINJ
OIRR
XTALK
C(off)
CCOM(on)
CCOM(off)
VNO or VNC = 1.5 V
CL = 1 nF, VGEN = 0 V, RGEN = 0
RL = 50 , CL = 5 pF, f = 1 MHz
f = 1 MHz
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
50 120
200
ns
20 50
120
1 5 pC
- 74
dB
- 90
7
20 pF
13
Power Supply Range
V+
2.7 12 V
Power Supply Current
I+
V+ = 3.3 V, VIN = 0 V or 3.3 V
1 µA
Notes:
a. Room = 25 °C, full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Difference of min and max values.
g. Guraranteed by 5 V leakage testing, not production tested.
www.vishay.com
Document Number: 70862
2 S11-1229–Rev. D, 20-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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DG9262, DG9263
Vishay Siliconix
SPECIFICATIONS (V+ = 5 V)
Parameter
Analog Switch
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 5 V, ± 10 %, VIN = 0.8 V or 2.4 Ve
Temp.a
D Suffix
- 40 °C to 85 °C
Min.b Typ.c Max.b
Unit
Analog Signal Ranged
VANALOG
Full 0
5V
Drain-Source On-Resistance
RDS(on)Matchd
RDS(on) Flatnessf
RDS(on)
RDS(on)
RDS(on)
Flatness
VNO or VNC = 3.5 V, V+ = 4.5 V
ICOM = 5 mA
VNO or VNC = 3.5 V
VNO or VNC = 1, 2 and 3 V
Room
Full
Room
Room
30 60
75
0.4 2
26
NO or NC Off Leakage Current INO/NC(off)
VNO or VNC = 1 V/4 V, VCOM = 4 V/1 V
Room - 100
Full - 5000
10
100
5000
COM Off Leakage Current
ICOM(off)
VCOM = 1 V/4 V, VNO or VNC = 4 V/1 V
Room - 100
Full - 5000
10
100
5000
pA
Channel-On Leakage Current ICOM(on)
VCOM = VNO or VNC = 1 V/4 V
Room - 200
Full - 10 000
200
10 000
Digital Control
Input Current
Dynamic Characteristics
IINL or IINH
Full 1 µA
Turn-On Time
Turn-Off Time
Charge Injectiond
tON
tOFF
QINJ
VNO or VNC = 3 V
CL = 1 nF, VGEN = 0 V, RGEN = 0
Room
Full
Room
Full
Room
35 75
150
ns
20 50
100
2 5 pC
Off-Isolation
Crosstalk
OIRR
XTALK
RL = 50 , CL = 5 pF, f = 1 MHz
Room
Room
- 74
- 90
dB
NC and NO Capacitance
C(off)
Room
7
Channel-On Capacitance
CD(on)
f = 1 MHz
Room 20 pF
COM-Off Capacitance
CCOM(off)
Room
13
Power Supply
Power Supply Range
V+
2.7 12 V
Power Supply Current
I+
V+ = 5.5 V, VIN = 0 V or 5.5 V
1 µA
Notes:
a. Room = 25 °C, full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Difference of min and max values.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 70862
www.vishay.com
S11-1229–Rev. D, 20-Jun-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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DG9262, DG9263
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C, unless otherwise noted)
2.0
1.5 V+ = 3 V
1.0
0.5
0.0
- 0.5
- 1.0
- 1.5
- 2.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VCOM
Charge Injection
3000
2500
2000
1500
1000
500
0
- 500
0
10 nA
- 40
V+ = 5 V
V+ = 3 V
123
VIN
Supply Current vs. VIN
4
5
1 nA
- 60
100 pA
10 pA
1 pA
ICOM(on)
ICOM(off)
0.1 pA
25
45 65 85 105
Temperature (°C)
Leakage Current vs. Temperature
125
- 80
- 100
- 120
- 140
0.001 M
0.01 M
0.1 M
1M
Frequency (Hz)
Off-Isolation vs. Frequency
10 M
2.5
2.0
1.5
1.0
0.5
0.0
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
0
V+ = 5 V
ICOM
INO/NC
1234
VCOM
Off-Leakage vs. Voltage at 25 °C
5
80
V+ = 3 V
60
40
V+ = 5 V
20
0
012345
VCOM
RDS vs. VCOM
www.vishay.com
Document Number: 70862
4 S11-1229–Rev. D, 20-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/

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www.DataSheet.co.kr
DG9262, DG9263
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C, unless otherwise noted)
80
60 85 °C
25 °C
40 40 °C
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VCOM
RDS vs. VCOM
70
V+ = 3 V
60
50
tON
40
30
tOFF
20
10
0
- 60
- 30 0
30 60 90
Temperature (°C)
Switching Time vs. Temperature
120
120
100
80
60
tON
40
tOFF
20
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0
1.5 2.0 2.5 3.0 3.5 4.0 4.5
V+
tON/tOFF vs. Power Supply Voltage
5.0
0.50
23456
V+
Input Switching Point vs. Power Supply Voltage
Document Number: 70862
www.vishay.com
S11-1229–Rev. D, 20-Jun-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/