LV51141T.pdf 데이터시트 (총 13 페이지) - 파일 다운로드 LV51141T 데이타시트 다운로드

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Ordering number : ENA1025
LV51141T
CMOS IC
1-Cell Lithium-Ion Battery
Protection IC
Overview
The LV51141T is protection IC for rechargeable Li-ion battery by high withstand voltage CMOS process.
The LV51141T protect single-cell Li-ion battery from over-charge, over-discharge, charge over-current and discharge
over-current.
Features
High accuracy detection voltage
Delay time (internal adjustment)
Low current consumption
0V cell battery charging function
Over-charge detection
Over-charge hysteresis
Over-discharge detection
Charge over-current detection
Discharge over-current detection
Operation
Over-discharge condition
±25mV
±25mV
±25%
±0.3V
±20mV
Typ. 3.0µA
Max. 0.1µA
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Supply voltage
Input voltage of VM
Output voltage of CO
Output voltage of DO
Power dissipation
Operating temperature
Storage temperature
Symbol
VDD
VM
VCO
VDO
PD
Topr
Tstg
Conditions
Ratings
VSS-0.3 to VSS+7
VDD-28 to VDD+0.3
VM-0.3 to VDD+0.3
VSS-0.3 to VDD+0.3
350
-40 to +85
-55 to +125
Unit
V
V
V
V
mW
°C
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
51408 MS PC 20080204-S00021 No.A1025-1/13
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LV51141T
Electrical Characteristics at Topr = 25°C, unless otherwise specified
Parameter
Symbol
Conditions
Test
circuit
min
Detection voltage
Over-charge detection voltage
VC
1 4.225
Over-charge hysteresis voltage
VHc
1 0.175
Over-discharge detection voltage
Vdc
1 2.925
Over-discharge reset voltage
VRdc
1 3.120
Charge over-current detection voltage
VIc
2 -1.000
Discharge over-current detection voltage
VIdc
2 0.100
Load short-circuiting detection voltage
Input voltage
Vshort Based on VDD, VDD = 3.5V
2
-1.7
Input voltage between VDD and VSS
0V battery charge starting charger voltage
VDD
Vcha
Internal circuit operating voltage
Acceptable
-
3
1.8
Current consumption
Current consumption on operation
Current consumption on shutdown
Output resistance
Iopr VDD = 3.5V, VM = 0V
Isdn VDD = VM = 1.8V
4
4
CO : Pch ON resistance
CO : Nch ON resistance
DO : Pch ON resistance
DO : Nch ON resistance
Discharge over-current release resistance
Detection delay time
Rcop
Rcon
Rdop
Rdon
Rdwn
CO = 3.0V, VDD = 3.5V,
VM = 0V
CO = 0.5V, VDD = 4.6V,
VM = 0V
DO = 3.0V, VDD = 3.5V,
VM = 0V
DO = 0.5V, VDD = VM = 1.8V
VDD = 3.5V, VM = 1.0V
5
5
5
5
5
1.5
0.5
1.7
1.7
15.0
Over-charge detection delay time
Over-discharge detection delay time
Charge over-current detection delay time
Discharge over-current detection delay time
Load short-circuiting detection delay time
Release delay time
tc
tdc
tic
tidc
tshort
VDD = VC-0.2VVC+0.2V,
VM = 0V
VDD = Vdc+0.2VVdc-0.2V,
VM = 0V
VDD = 3.5V, VM = 0V-1.0V
VDD = 3.5V, VM = 0V1.0V
VDD = 3.5V, VM = 0V3.5V
6
6
6
6
6
0.70
21.7
5.6
5.6
190
Release delay time 1
Over-discharge release
Charge over-current release (*1)
Discharge over-current release
Load short-circuiting release
Release delay time 2
Over-charge release
trel1
6 1.0
trel2 VDD = VC+0.2VVC-0.2V,
VM = 1.0V
6
8.0
Note : *1 Upon connecting to charger upon over-discharge, the delay time after recovery from over-discharge.
Ratings
typ
4.250
0.2
3.000
3.200
-0.700
0.120
-1.3
0.9
3.0
3.0
1.0
3.5
3.5
30.0
1.0
31.0
8.0
8.0
370
2.0
16.0
Unit
max
4.275
0.225
3.075
3.280
-0.400
0.140
-1.0
V
V
V
V
V
V
V
7.0 V
1.4 V
6.0 µA
0.1 µA
4.5 k
1.5 k
5.0 k
5.0
60.0
k
k
1.30
s
40.3 ms
10.4
10.4
550
ms
ms
µs
3.0 ms
24.0 ms
No.A1025-2/13
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Package Dimensions
unit : mm (typ)
3356
2.9
6
12
(0.5) 0.95
0.4
LV51141T
Pd max -- Ta
0.4
Specified board : 33×5×1.0mm3
0.35
glass epoxy
(Both sides substrate)
0.3
0.2
0.1
0.15
0.14
0
40 0
40 80 120
Ambient temperature, Ta – °C
SANYO : SOT-23-6
Pin Assignment
VSS
5
VDD
4
NC
4
123
DO VM CO
Top view
Pin Function
Pin No.
Pin Name
1 DO
2 VM
3 CO
4 NC
5 VDD
6 VSS
Description
FET gate connection for discharge control (CMOS output)
Voltage monitoring for charger negative
FET gate connection for charge control (CMOS output)
N/C
Positive power input
Negative power input
No.A1025-3/13
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Block Diagram
LV51141T
VDD
VSS
Oscillator
Counter
Control Circuit
-
+
Over-charge
Detector
+
-
Over-discharge
Detector
Short Detector
+
Charge
-
Over-current
Detector
+
-
Discharge
Over-current
Detector
Level
Shifter
CO
VM
DO
Measurement Conditions
Over-charge detection voltage, Over-charge hysteresis voltage --- [Circuit 1]
Set V1 = 3.5V and V2 = 0V. Over-charge detection voltage VC is V1 at which VCO goes "Low" from "High" when V1
is gradually increased from 3.5V. Then IC is released from the over-charge state and VCO goes "High" from "Low" at
the voltage "Measured VC-VHc" when V1 is gradually decreased.
If V2 is set to the greater value than discharge over-current detection voltage VIdc in the over-charge state, VHc is
canceled and then IC is released from the over-charge state at VC.
Over-discharge detection voltage --- [Circuit 1]
Set V1 = 3.5V and V2 = 0V. Over-discharge detection voltage Vdc is V1 at which VDO goes "Low" from "High" when
V1 is gradually decreased from 3.5V. Next, set V2 under to charge over-current detection voltage VIc. Then IC is
released from the over-discharge state at Vdc and VDO goes "High" from "Low".
Charge over-current detection voltage --- [Circuit 2]
Set V1 = 3.5V and V2 = 0V. Charge over-current detection voltage VIc is V2 at which VCO goes "Low" from "High"
when V2 is gradually decreased from 0V.
Discharge over-current detection voltage --- [Circuit 2]
Set V1 = 3.5V and V2 = 0V. Discharge over-current detection voltage VIdc is V2 at which VDO goes "Low" from
"High" when V2 is gradually increased from 0V.
Load short-circuiting detection voltage --- [Circuit 2]
Set V1 = 3.5V and V2 = 0V. Load short-circuiting detection voltage Vshort is V2 at which VDO goes "Low" from
"High" within a time between the minimum and the maximum value of load short-circuiting detection delay time tshort,
when V2 is increased rapidly within 10µs.
0V battery charge starting charger voltage --- [Circuit 3]
Set V1 = V2 = 0V and decrease V2 gradually. 0V battery charge starting charger voltage Vcha is V2 when VCO goes
"High" (V1-0.1V or higher).
Continued on next page.
No.A1025-4/13
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LV51141T
Continued from preceding page.
Current consumption on operation and shutdown --- [Circuit 4]
Set V1 = 3.5V and V2 = 0V on normal condition. IDD shows current consumption on operation Iopr.
Set V1 = V2 = 1.8V on over-discharge condition. IDD shows current consumption on shutdown Isdn.
Co : Pch ON resistance, Co : Nch ON resistance --- [Circuit 5]
Set V1 = 3.5V, V2 = 0V and V3 = 3.0V. (V1-V3)/|ICo| is Pch ON resistance Rcop.
Set V1 = 4.6V, V2 = 0V and V3 = 0.5V. V3/|ICo| is Nch ON resistance Rcon.
Do : Pch ON resistance, Do : Nch ON resistance --- [Circuit 5]
Set V1 = 3.5V, V2 = 0V and V4 = 3.0V. (V1-V4)/|IDo| is Pch ON resistance Rdop.
Set V1 = V2 = 1.8V and V4 = 0.5V. V4/|IDo| is Nch ON resistance Rdon.
Discharge over-current release resistance --- [Circuit 5]
Set V1 = 3.5V, V2 = 0V at first. And then, set V2 = 1.0V. V2/|IVM| is discharge over-current release resistance Rdwn.
Over-charge detection delay time, Release delay time 2 --- [Circuit 6]
Set V2 = 0V. Increase V1 from the voltage VC-0.2V to VC+0.2V rapidly within 10µs. Over-charge detection delay time
tc is the time needed for VCO to go "Low" just after the change of V1.
Next, set V2 = 1V and decrease V1 from VC+0.2V to VC-0.2V rapidly within 10µs. Over-charge release delay time trel
2 is the time needed for VCO to go "High" just after the change of V1.
Over-discharge detection delay time, Release delay time 1 --- [Circuit 6]
Set V2 = 0V. Decrease V1 from the voltage Vdc+0.2V to Vdc-0.2V rapidly within 10µs. Over-discharge detection
delay time tdc is the time needed for VDO to go "Low" just after the change of V1.
Next, set V2 = -1V and increase V1 from Vdc-0.2V to Vdc+0.2V rapidly within 10µs. Release delay time 1 trel1 in case
of over-discharge is the time needed for VDO to go "High" just after the change of V1.
Charge over-current detection delay time, Release delay time 1 --- [Circuit 6]
Set V1 = 3.5V and V2 = 0V. Decrease V2 from 0V to -1V rapidly within 10µs. Charge over-current delay time tic is the
time needed for VCO to go "Low" just after the change of V2.
Next, increase V2 from -1V to 0V rapidly within 10µs. Release delay time 1 trel1 in case of charge over-current is the
time needed for VCO to go "High" just after the change of V2.
Discharge over-current detection delay time, Release delay time 1 --- [Circuit 6]
Set V1 = 3.5V and V2 = 0V. Increase V2 from 0V to 1V rapidly within 10µs. Discharge over-current delay time tidc is
the time needed for VDO to go "Low" just after the change of V2.
Next, decrease V2 from 1V to 0V rapidly within 10µs. Release delay time 1 trel1 in case of discharge over-current is the
time needed for VDO to go "High" just after the change of V2.
Load short-circuiting detection delay time, Release delay time 1 --- [Circuit 6]
Set V1 = 3.5V and V2 = 0V. Increase V2 from 0V to 3.5V rapidly within 10µs. Load short-circuiting detection delay
time tshort is the time needed for VDO to go "Low" just after the change of V2.
Next, decrease V2 from 3.5V to 0V rapidly within 10µs. Release delay time 1 trel1 in case of load short-circuiting is the
time needed for VDO to go "High" just after the change of V2.
No.A1025-5/13
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