LV5124T.pdf 데이터시트 (총 8 페이지) - 파일 다운로드 LV5124T 데이타시트 다운로드

No Preview Available !

www.DataSheet.co.kr
Ordering number : ENA1153
LV5124T
CMOS IC
2-Cell Lithium-Ion Secondary Battery
Protection IC
Overview
The LV5124T is a protection IC for 2-cell lithium-ion secondary batteries.
Features
Monitoring function for each cell:
Detects overcharge and over-discharge conditions and controls the
charging and discharging operation of each cell.
High detection voltage accuracy:
Over-charge detection accuracy ±25mV
Over-discharge detection accuracy ±100mV
Hysteresis cancel function:
The hysteresis of over-discharge detection voltage is made small by
sensing the connection of a load after overcharging has been detected.
Discharge current monitoring function:
Detects over-currents and load shorting, and an excessive
discharge current is controlled.
Latch function after detecting over-current (Release is made by connecting the charger)
Low current consumption:
Normal operation mode typ. 6.0µA
Stand by mode
max. 0.2µA
0V cell charging function:
Charging is enabled even when the cell voltage is 0V by giving a
potential difference between the VDD pin and V- pin.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
52808 MS 20080312-S00003 No.A1153-1/8
Datasheet pdf - http://www.DataSheet4U.net/

No Preview Available !

www.DataSheet.co.kr
LV5124T
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Power supply voltage
Input voltage
Charger minus voltage
Output voltage Cout pin voltage
Dout pin voltage
Allowable power dissipation
Operating ambient temperature
Storage temperature
Symbol
VDD
V-
Conditions
Vcout
Vdout
Pd max
Topr
Tstg
Independent IC
Electrical Characteristics at Ta = 25°C, unless especially specified.
Parameter
Operation input voltage
0V cell charging minimum operation
voltage
Over-charge detection voltage
Over-charge release voltage
Over-charge detection delay time
Over-charge release delay time
Over-discharge detection voltage
Over-discharge release
hysteresis voltage
Over-discharge detection delay time
Over-discharge release delay time
Over-current detection voltage
Over-current release
hysteresis voltage
Over-current detection delay time
Over-current release delay time
Short circuit detection voltage
Short circuit detection delay time
Standby release voltage
Internal resistance (connect to VDD)
Internal resistance (connect to VSS)
Cout Nch ON voltage
Cout Pch ON voltage
Dout Nch ON voltage
Dout Pch ON voltage
Vc input current
Current consumption
Standby current
T-terminal input ON voltage
Symbol
Conditions
Vcell
Vmin
Between VDD and VSS
Between VDD-VSS =0 and VDD-V-
Vd1
Vr1 V- Vd3
V- > Vd3
td1 VDD-Vc=3.5V4.5V, Vc-VSS=3.5V
tr1 VDD-Vc=4.5V3.5V, Vc-VSS=3.5V
Vd2
Vh2
td2 VDD-Vc=3.5V2.2V, Vc-VSS=3.5V
tr2 VDD-Vc=2.2V3.5V, Vc-VSS=3.5V
Vd3 VDD-Vc=3.5V, Vc-VSS=3.5V
Vh3 VDD-Vc=3.5V, Vc-VSS=3.5V
td3
tr3
Vd4
td4
Vstb
RDD
RSS
VOL1
VOH1
VOL2
VOH2
Ivc
IDD
Istb
Vtest
VDD-Vc=3.5V, Vc-VSS=3.5V
VDD-Vc=3.5V, Vc-VSS=3.5V
VDD-Vc=3.5V, Vc-VSS=3.5V
VDD-Vc=3.5V, Vc-VSS=3.5V
VDD-Vc=2.0V, Vc-VSS=2.0V
(V-)-VSS
IOL=50µA, VDD-Vc=4.4V, Vc-VSS=4.4V
IOL=50µA, VDD-Vc=3.9V, Vc-VSS=3.9V
IOL=50µA, VDD-Vc=Vd2(min),
Vc-VSS=Vd2(min)
IOL=50µA, VDD-Vc=3.9V, Vc-VSS=3.9V
VDD-Vc=3.5V, Vc-VSS=3.5V
VDD-Vc=3.5V, Vc-VSS=3.5V
VDD-Vc=2.2V, Vc-VSS=3.5V
VDD-Vc=3.5V, Vc-VSS=3.5V
Ratings
-0.3 to +12
VDD-28 to VDD+0.3
VDD-28 to VDD+0.3
VSS-0.3 to VDD+0.3
170
-30 to +85
-40 to +125
Unit
V
V
V
V
mW
°C
°C
min
1.5
Ratings
typ
max
10
1.5
Unit
V
V
4.325
4.100
4.250
0.5
20.0
2.20
10.0
4.350
4.150
1.0
40.0
2.30
20.0
4.375
4.200
4.360
1.5
60.0
2.40
40.0
V
V
V
s
ms
V
mV
50
0.5
0.18
5.0
100
1.0
0.20
10.0
150
1.5
0.22
20.0
ms
ms
V
mV
2.5
0.5
1.0
0.2
VDD×0.4
5.0
1.0
1.3
0.5
VDD×0.5
7.5
1.5
1.6
0.8
VDD×0.6
ms
ms
V
ms
V
100 200 400 k
0.5 1.0 1.5 M
0.5 V
VDD-0.5
V
0.5 V
VDD-0.5
VDD×0.4
0.0
6.0
VDD×0.5
1.0
13.0
0.2
VDD×0.6
V
µA
µA
µA
V
No.A1153-2/8
Datasheet pdf - http://www.DataSheet4U.net/

No Preview Available !

www.DataSheet.co.kr
Package Dimensions
unit : mm (typ)
3245B
3.0
8
12
(0.53)
0.65
0.25
0.125
SANYO : MSOP8(150mil)
LV5124T
Pd max -- Ta
200
Independent IC
170
150
100
68
50
0
-30 -20
0 20 40 60 80
Ambient temperature, Ta -- °C
100
Pin Assignment
Dout T Vc Sense
8765
1 2 3 4 Top view
VDD Cout V- VSS
Pin Functions
Pin No.
1 VDD
2 Cout
3 V-
4 VSS
5 Sense
6 Vc
7T
8 Dout
Symbol
Description
VDD pin
Overcharge detection output pin
Charger minus voltage input pin
VSS pin
Sense pin
Intermediate voltage input pin
Pin to shorten detection time(“H”: Shortening mode, “L”: Normal mode)
Overdischarge detection output pin
No.A1153-3/8
Datasheet pdf - http://www.DataSheet4U.net/

No Preview Available !

www.DataSheet.co.kr
Block Diagram
LV5124T
Sence VDD
51
Vc 6
+
-
+
-
+
-
+
-
+
-
td1,tr1
Delay
conrol
logic
td2,tr2
td3,tr3
+
-
td4
4
VSS
3
V-
7
T
2 Cout
8 Dout
No.A1153-4/8
Datasheet pdf - http://www.DataSheet4U.net/

No Preview Available !

www.DataSheet.co.kr
LV5124T
Functional Description
Over-charge detection
If either of the cell voltage is equal to or more than the over-charge detection voltage, stop further charging by
turning “L” the Cout pin and turning off external Nch MOS FET after the over-charge detection delay time.
This delay time is set by the internal counter.
The over-charge detection comparator has the hysteresis function. Note that this hysteresis can be cancelled by
connecting the load after detection of over-charge detection. and it becomes small to hysteresis peculiar to a
comparator.
Once over-charge detection is made, over-current detection is not made to prevent incorrect operations. Note that
short-circuit can be detected.
Over-charge release
If both cell voltages become equal to or less than the over-charge release voltage (VM Vd3) when charger is
connected, or if it become equal to or less than the over-charge release voltage (VM > Vd3) when load is connected,
the Cout pin returns to “H” after the over-charge release delay time set by the internal counter.
When load is connected and either cell or both cell voltages are equal to or more than the over-charge release voltage
(VM > Vd3), the Cout pin does not return to “H”. But the load current flows through the parasitic diode of external
Nch MOS FET on Cout, consequently each cell voltage becomes equal to or less than over-charge release voltage
(VM > Vd3), the Cout pin returns to “H” after the over-charge release delay time.
Over-discharge detection
When either cell voltage is equal to or less than over-discharge voltage, the IC stops further discharging by turning
the Dout pin “L” and turning off external Nch MOS FET after the over-charge detection delay time.
The IC goes into stand-by mode after detecting over-discharge and its consumption current is kept at about 0A. After
over-discharge detection, the V- pin will be connected to VDD pin via internal resistor (typ 200k).
Over-discharge release
Release from over-discharge is made by only connecting charger. If the V- pin voltage becomes equal to or lower
than the stand-by release voltage by connecting charger after detecting over-discharge, The IC is released from the
stand-by state to start cell voltage monitoring. If both cell voltages become equal to or more than the over-discharge
detection voltage by charging, the Dout pin returns to “H” after the over-discharge release delay time set by the
internal counter.
Over-current detection
When excessive current flows through the battery, the V- pin voltage rises by the ON resister of external MOS FET
and becomes equal to or more than the over-current detection voltage, the Dout pin turns to “L” after the over-current
detection delay time and the external Nch MOS FET is turned off to prevent excessive current in the circuit. The
detection delay time is set by the internal counter. After detection, the V- pin will be connected to VSS via internal
resistor (typ 1M). It will not go into stand-by mode after detecting over-current.
Short circuit detection
If greater discharging current flows through the battery and the V- pin voltage becomes equal to or more than the
short-circuit detection voltage, it will go into short-circuit detection state after the short circuit delay time shorter than
the over-current detection delay time. When short-circuit is detected, just like the time of over-current detection, the
Dout pin turns to “L” and external Nch MOS FET is turned off to prevent high current in the circuit. The V- pin will
be connected to VSS after detection via internal resistor (typ 1M). It will not go into stand-by mode after detecting
short circuit.
Over-current/short-detection release
After detecting over-current or short circuit, the internal resistor (typ.1M) between V- pin and VSS pin becomes
effective. In this case, the V-pin voltage will be more than over-current detection voltage because of the relation
between internal resister and the internal impedance of V- pin. Therefore, if the load resister is removed after
detecting over-current or short circuit, the detection state will be kept. Release from over-current or short circuit is
only made by connecting a charger to make the V- pins lower than over-current detection voltage and the Dout pin
returns to “H after over-current release delay time set by the internal counter.
No.A1153-5/8
Datasheet pdf - http://www.DataSheet4U.net/