K1307.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 K1307 데이타시트 다운로드

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2SK1307
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
4 V gate drive device
Can be driven from 5 V source
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220FM
D 12 3
1. Gate
G 2. Drain
3. Source
S
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2SK1307
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
100
±20
20
80
20
35
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2
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Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS 100
Gate to source breakdown
voltage
V(BR)GSS ±20
Gate to source leak current
I GSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
1.0
Forward transfer admittance |yfs|
10
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
Body to drain diode reverse
recovery time
t rr
Note: 1. Pulse test
Typ Max Unit
——V
——V
0.065
±10
250
2.0
0.085
µA
µA
V
0.085
16
1300
540
160
12
100
300
150
1.3
0.12
S
pF
pF
pF
ns
ns
ns
ns
V
300 —
ns
2SK1307
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 80 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 10 A, VGS = 10 V *1
ID = 10 A, VGS = 4 V *1
ID = 10 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 10 A, VGS = 10 V,
RL = 3
IF = 20 A, VGS = 0
IF = 20 A, VGS = 0,
diF/dt = 50 A/µs
See characteristic curves of 2SK1302.
3
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2SK1307
Power vs. Temperature Derating
60
40
20
0 50 100 150
Case Temperature TC (°C)
Maximum Safe Operation Area
100
30 100 µs
10
3
1.0
Operation in this Area
is Limited by RDS (on)
0.3
Ta = 25°C
0.1
1
3 10 30 100 300 1,000
Drain to Source Voltage VDS (V)
3
D=1
1.0
0.5
Normalized Transient Thermal Impedance vs. Pulse Width
TC = 25°C
0.3 0.2
0.1
0.1 0.05
0.02
0.03
0.01
1 Shot
Pulse
0.01
10 µ 100 µ
θch–c (t) = γS (t) · θch–c
θch–c = 3.57°C/W, TC = 25°C
PDM
PW
T
D
=
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
4
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10.0 ± 0.3
2.8 ± 0.2
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7.0 ± 0.3
φ 3.2 ± 0.2
2.5 ± 0.2
Unit: mm
1.2 ± 0.2
1.4 ± 0.2
2.54 ± 0.5
4.45 ± 0.3
2.5
0.7 ± 0.1
2.54 ± 0.5
0.5 ± 0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220FM
Conforms
1.8 g
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