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2SK2936
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS =0.010 typ.
High speed switching
4V gate drive device can be driven from 5V source
Outline
TO–220CFM
ADE-208-559B (Z)
3rd. Edition
Jun 1998
D
G
123
1. Gate
2. Drain
3. Source
S
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2SK2936
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
I Note3
AP
E Note3
AR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW 10µs, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Ratings
60
±20
45
180
45
45
173
35
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
2
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2SK2936
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Gate to source leak current
I GSS
Zero gate voltege drain current
I DSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
60
±20
1.5
24
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
t d(on)
tr
t d(off)
tf
VDF
t rr
Note: 4. Pulse test
Typ
0.010
0.015
40
2200
1050
320
25
200
320
240
0.95
60
Max
±10
10
2.5
0.013
0.025
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10mA, VGS = 0
IG = ±100µA, VDS = 0
VGS = ±16V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1mA, VDS = 10V
ID = 20A, VGS = 10VNote4
ID = 20A, VGS = 4V Note4
ID = 20A, VDS = 10V Note4
VDS = 10V
VGS = 0
f = 1MHz
ID = 20A, VGS = 10V
VGS = 10V, ID = 20A
RL = 1.5
IF = 45A, VGS = 0
IF = 45A, VGS = 0
diF/ dt =50A/µs
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2SK2936
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0 50 100 150
Case Temperature Tc (°C)
200
1000
Maximum Safe Operation Area
300
100
30
10
3
1
DC
Operation in
this area is
limited by R
PW
Operatio=n
DS(on)
1(T0cm=s12(1m150s°s0hC1oµ)0ts)µs
0.3
0.1 Ta = 25 °C
0.1 0.3 1 3 10 30
Drain to Source Voltage V DS(V)
100
Typical Output Characteristics
10 V 6 V
50
5V
Pulse Test
4V
40
30 3.5 V
20
10 3 V
VGS = 2.5 V
0 2 468
Drain to Source Voltage V DS(V)
10
Typical Transfer Characteristics
50
VDS = 10 V
Pulse Test
40
30
20
25°C
Tc = 75°C
10
–25°C
0 1 23 45
Gate to Source Voltage V G(SV)
4
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2SK2936
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
Pulse Test
0.4
0.3
0.2 I D = 20 A
10 A
0.1
5A
0 4 8 12 16 20
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20 VGS = 4 V
10
10 V
5
2
1
12
5 10 20 50 100
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
40
Pulse Test
32
I D = 20 A 10 A 5 A
24
V GS = 4 V
16
8
10 V
5, 10, 20 A
0
–40 0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
500
V DS = 10 V
200 Pulse Test
100
50 Tc = –25 °C
20
10
5
2
1
0.5
0.1
25 °C
75 °C
0.3 1 3 10 30
Drain Current I D (A)
100
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