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1200V XPTTM IGBT
GenX3TM
High-Speed IGBT
for 20-50 kHz Switching
Advance Technical Information
IXYH50N120C3
VCES =
IC110 =
V CE(sat)
tfi(typ) =
1200V
50A
3.0V
57ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 125°C, RG = 5Ω
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
105 A
50 A
230 A
40 A
750 mJ
ICM = 100
@VCE VCES
625
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
6g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
50A,
VGE
=
15V,
Note
1
TJ
=
125°C
Characteristic Values
Min. Typ. Max.
1200
V
2.5 4.5 V
25 μA
250 μA
±100 nA
2.5 3.0 V
3.2 V
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
z Optimized for Low Switching Losses
z Square RBSOA
z Positive Thermal Coefficient of
Vce(sat)
z Avalanche Rated
z High Current Handling Capability
z International Standard Package
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z High Frequency Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2011 IXYS CORPORATION, All Rights Reserved
DS100343(05/11)
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Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 40A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 50A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 40A, VGE = 15V
VCE = 0.5 • VCES, RG = 5Ω
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 125°C
IC = 40A, VGE = 15V
VCE = 0.5 • VCES, RG = 5Ω
Note 2
RthJC
RthCS
Characteristic Values
Min.
Typ. Max.
22 37
S
2770
195
83
pF
pF
pF
143 nC
17 nC
60 nC
24 ns
50 ns
2.58 mJ
240 ns
57 ns
1.20 2.00 mJ
25 ns
57 ns
5.14 mJ
274 ns
98 ns
1.47 mJ
0.20 °C/W
0.21 °C/W
IXYH50N120C3
TO-247 (IXYH) Outline
123
P
e
Terminals: 1 - Gate
3 - Emitter
2 - Collector
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
bb12
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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IXYH50N120C3
100
90
80
70
60
50
40
30
20
10
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGE = 15V
13V
11V
10V
9V
8V
7V
6V
5V
0.5 1 1.5 2 2.5 3 3.5 4
VCE - Volts
4.5
100
90
80
70
60
50
40
30
20
10
0
0
Fig. 3. Output Characteristics @ TJ = 125ºC
VGE = 15V
13V
11V
10V
9V
8V
7V
6V
5V
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
VCE - Volts
6
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
7.5
TJ = 25ºC
6.5
5.5
4.5 I C = 100A
3.5
50A
2.5
25A
1.5
5 6 7 8 9 10 11 12 13 14 15
VGE - Volts
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
300
VGE = 15V
13V
250 12V
11V
200
10V
150 9V
100
50
0
0
8V
7V
6V
5V
5 10 15 20 25 30
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
2.2
2.0 VGE = 15V
1.8 I C = 100A
1.6
1.4
1.2 I C = 50A
1.0
0.8 I C = 25A
0.6
0.4
-50
-25
0 25 50 75 100
TJ - Degrees Centigrade
125
150
Fig. 6. Input Admittance
100
90
80
70
60
50
40
30
TJ = 125ºC
25ºC
20 - 40ºC
10
0
2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8
VGE - Volts
© 2011 IXYS CORPORATION, All Rights Reserved
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IXYH50N120C3
Fig. 7. Transconductance
60
50 TJ = - 40ºC
40 25ºC
125ºC
30
20
10
0
0 10 20 30 40 50 60 70 80 90 100
IC - Amperes
10,000
Fig. 9. Capacitance
1,000
Cies
100
10
0
f = 1 MHz
5
10
15 20 25
VCE - Volts
Coes
Cres
30 35
40
16
14 VCE = 600V
I C = 50A
12 I G = 10mA
Fig. 8. Gate Charge
10
8
6
4
2
0
0 20 40 60 80 100 120 140
QG - NanoCoulombs
Fig. 10. Reverse-Bias Safe Operating Area
110
100
90
80
70
60
50
40
30
TJ = 125ºC
20 RG = 5
10 dv / dt < 10V / ns
0
200 300 400 500 600 700 800 900 1000 1100 1200
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.01
0.1
1
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Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
6
Eoff Eon - - - -
5 TJ = 125ºC , VGE = 15V
VCE = 600V
4
I C = 80A
24
20
16
3 12
2
I C = 40A
8
14
00
5 10 15 20 25 30
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
4.5
4.0
Eoff Eon - - - -
RG = 5, VGE = 15V
3.5 VCE = 600V
3.0 I C = 80A
2.5
2.0
1.5
I C = 40A
1.0
0.5
25
50 75
TJ - Degrees Centigrade
100
16
14
12
10
8
6
4
2
0
125
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
180 360
160 t f i td(off) - - - - 340
RG = 5, VGE = 15V
140
VCE = 600V
320
120 TJ = 125ºC
100
300
280
80 260
60
TJ = 25ºC
40
240
220
20 200
0 180
20 30 40 50 60 70 80
IC - Amperes
© 2011 IXYS CORPORATION, All Rights Reserved
IXYH50N120C3
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
4
3.5
Eoff Eon - - - -
RG = 5, VGE = 15V
3 VCE = 600V
2.5 TJ = 125ºC
2
TJ = 25ºC
1.5
1
0.5
0
20 30 40 50 60 70
IC - Amperes
16
14
12
10
8
6
4
2
0
80
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
160
t f i td(off) - - - -
140 TJ = 125ºC, VGE = 15V
VCE = 600V
120
800
700
600
100
80 I C = 40A
60
I C = 80A 500
400
300
40
5
200
10 15 20 25 30
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
160 320
t f i td(on) - - - -
140 RG = 5, VGE = 15V
VCE = 600V
120
I C = 40A
300
280
100 260
80 240
I C = 80A
60 220
40 200
20
25
50 75 100
TJ - Degrees Centigrade
180
125
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