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Si6954ADQ
Vishay Siliconix
N-Channel 2.5-V (G-S) Battery Switch
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.053 at VGS = 10 V
0.075 at VGS = 4.5 V
ID (A)
3.4
2.9
FEATURES
Halogen-free
TrenchFET® Power MOSFETs: 2.5 V Rated
RoHS
COMPLIANT
D1 D2
D1 1
S1 2
S1 3
G1 4
TSSOP-8
Top View
8 D2
7 S2
6 S2
5 G2
Ordering Information: Si6954ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
3.4 3.1
2.7 2.5
Pulsed Drain Current (10 µs Pulse Width)
IDM 20
Continuous Source Current (Diode Conduction)a
IS 0.83 0.69
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
1.0 0.83
0.96 0.53
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
90
126
65
Maximum
125
150
80
Unit
°C/W
Document Number: 71130
S-81221-Rev. C, 02-Jun-08
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Si6954ADQ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VSD
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 3.4 A
VGS = 4.5 V, ID = 2.9 A
VDS = 15 V, ID = 3.4 A
IS = 0.83 A, VGS = 0 V
VDS = 10 V, VGS = 10 V, ID = 3.4 A
VDD = 10 V, RL = 10 Ω
ID 1 A, VGEN = 10 V, RG = 6 Ω
IF = 0.83 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
1
20
Typ.
Max.
100
1
10
0.044
0.062
10
0.8
0.053
0.075
1.2
Unit
V
nA
µA
A
Ω
S
V
8 16
1.4 nC
1.2
12 20
10 20
23 45 ns
8 15
25 40
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
VGS = 10 thru 5 V
16
4V
20
16
12 12
88
4 3V
4
0
01234
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0
0
TC = 125 °C
25 °C
- 55 °C
1234
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
5
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Document Number: 71130
S-81221-Rev. C, 02-Jun-08
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Si6954ADQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.15 600
0.12
0.09
0.06
0.03
VGS = 4.5 V
VGS = 10 V
0.00
0
4 8 12 16
ID - Drain Current (A)
On-Resistance vs. Drain Current
20
500
Ciss
400
300
200
Coss
100
Crss
0
0
6
12 18 24
VDS - Drain-to-Source Voltage (V)
Capacitance
30
10
VDS = 10 V
ID = 3.4 A
8
6
4
2
1.8
VGS = 10 V
1.6 ID = 3.4 A
1.4
1.2
1.0
0.8
0
02468
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
20
TJ = 150 °C
10
0.15
0.12
0.09
ID = 3.4 A
TJ = 25 °C
0.06
0.03
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71130
S-81221-Rev. C, 02-Jun-08
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Si6954ADQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4 30
0.2
ID = 250 µA
0.0
25
20
- 0.2
15
- 0.4
10
- 0.6
5
- 0.8
- 50 - 25
2
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
1
Duty Cycle = 0.5
0
10 - 3
10 - 2
10 - 1
1 10 100 600
Time (s)
Single Pulse Power, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
2
1
Duty Cycle = 0.5
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 126 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10 - 2
10 - 1
1
Square Wave Pulse Duration (s)
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71130.
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Document Number: 71130
S-81221-Rev. C, 02-Jun-08
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TSSOP: 8ĆLEAD
JEDEC Part Number: MO-153
R 0.10
Corners)
De
B
C
R 0.10
(4 Corners)
E
L
oK1
L1
Package Information
Vishay Siliconix
MILLIMETERS
Dim Min
Nom
Max
A
A1 0.05
A2 0.80
B 0.19
0.10
1.00
0.28
C – 0.127
D 2.90 3.00
E 6.20 6.40
E1 4.30
e
4.40
0.65
L 0.45 0.60
L1 0.90 1.00
Y
oK1
0_
3_
ECN: S-03946—Rev. G, 09-Jul-01
DWG: 5844
1.20
0.15
1.05
0.30
3.10
6.60
4.50
0.75
1.10
0.10
6_
Document Number: 71201
06-Jul-01
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