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www.vishay.com
VBP104S, VBP104SR
Vishay Semiconductors
Silicon PIN Photodiode
VBP104S
VBP104SR
DESCRIPTION
VBP104S and VBP104SR are high speed and high sensitive
PIN photodiodes. It is a surface mount device (SMD)
including the chip with a 4.4 mm2 sensitive area detecting
visible and near infrared radiation.
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2
• Radiant sensitive area (in mm2): 4.4
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: = ± 65°
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• High speed photo detector
PRODUCT SUMMARY
COMPONENT
VBP104S
VBP104SR
Ira (μA)
35
35
Note
• Test conditions see table “Basic Characteristics”
(deg)
± 65
± 65
0.1 (nm)
430 to 1100
430 to 1100
ORDERING INFORMATION
ORDERING CODE
VBP104S
VBP104SR
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
REMARKS
MOQ: 1000 pcs, 1000 pcs/reel
MOQ: 1000 pcs, 1000 pcs/reel
PACKAGE FORM
Gullwing
Reverse gullwing
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Reverse voltage
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Tamb 25 °C
Acc. reflow solder profile fig. 8
VR
PV
Tj
Tamb
Tstg
Tsd
RthJA
60
215
100
- 40 to + 100
- 40 to + 100
260
350
UNIT
V
mW
°C
°C
°C
°C
K/W
Rev. 1.3, 10-Aug-11
1 Document Number: 81170
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/

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www.vishay.com
VBP104S, VBP104SR
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Temperature coefficient of Vo
Short circuit current
Temperature coefficient of Ik
Reverse light current
Angle of half sensitivity
IF = 50 mA
IR = 100 μA, E = 0
VR = 10 V, E = 0
VR = 0 V, f = 1 MHz, E = 0
VR = 3 V, f = 1 MHz, E = 0
Ee = 1 mW/cm2, = 950 nm
Ee = 1 mW/cm2, = 950 nm
Ee = 1 mW/cm2, = 950 nm
Ee = 1 mW/cm2, = 950 nm
Ee = 1 mW/cm2, = 950 nm,
VR = 5 V
VF
V(BR)
Iro
CD
CD
Vo
TKVo
Ik
TKIk
Ira
60
25
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
VR = 10 V, = 950 nm
VR = 10 V, RL = 1 k,
= 820 nm
p
0.1
NEP
tr
Fall time
VR = 10 V, RL = 1 k,
= 820 nm
tf
TYP.
1
2
48
17
350
- 2.6
32
0.1
35
± 65
940
430 to 1100
4 x 10-14
100
100
MAX.
1.3
30
40
UNIT
V
V
nA
pF
pF
mV
mV/K
μA
%/K
μA
deg
nm
nm
W/Hz
ns
ns
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
100
10
VR = 10 V
1
20 40 60 80 100
94 8403
Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
1.4
1.2 VR = 5 V
λ = 950 nm
1.0
0.8
0.6
0
94 8409
20 40 60 80 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.3, 10-Aug-11
2 Document Number: 81170
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/

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www.DataSheet.co.kr
www.vishay.com
1000
100
10
1 VR = 5 V
λ = 950 nm
0.1
0.01
94 8421
0.1 1
Ee - Irradiance (mW/cm2)
10
Fig. 3 - Reverse Light Current vs. Irradiance
100
λ = 950 nm
1 mW/cm2
0.5 mW/cm2
10 0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
1
0.1
94 8422
1 10
VR - Reverse Voltage (V)
100
Fig. 4 - Reverse Light Current vs. Reverse Voltage
80
E=0
60 f = 1 MHz
40
20
0
0.1
1
10 100
94 8423
VR - Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
VBP104S, VBP104SR
Vishay Semiconductors
1.0
0.8
0.6
0.4
0.2
0
350
94 8420
550 750 950
λ - Wavelength (nm)
1150
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
0° 10° 20°
30°
40°
1.0
0.9 50°
0.8 60°
70°
0.7
80°
0.6 0.4 0.2
94 8406
0
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
Rev. 1.3, 10-Aug-11
3 Document Number: 81170
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/

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PACKAGE DIMENSIONS FOR VBP104S in millimeters
VBP104S, VBP104SR
Vishay Semiconductors
Anode
Cathode
Flat area 0.3 min.
4.4 ± 0.1
2.2 0.18 ± 0.2
Chip Size
2.4 x 2.4
technical drawings
according to DIN
specifications
Drawing-No.: 6.541-5088.01-4
Issue: 1; 15.04.10
22107
1 ± 0.15
6.4 ± 0.3
Recommended solder pad
8.9
5.4
Rev. 1.3, 10-Aug-11
4 Document Number: 81170
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/

No Preview Available !

www.DataSheet.co.kr
www.vishay.com
PACKAGE DIMENSIONS FOR VBP104SR in millimeters
VBP104S, VBP104SR
Vishay Semiconductors
Flat area 0.3 min.
Anode
Cathode
technical drawings
according to DIN
specifications
Drawing-No.: 6.541-5087.01-4
Issue: 1; 15.04.10
22106
4.4 ± 0.1
2.2 0.18 ± 0.2
Chip Size
2.4 x 2.4
1 ± 0.15
6.4 ± 0.3
Recommended solder pad
8.9
5.4
Rev. 1.3, 10-Aug-11
5 Document Number: 81170
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/