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DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
2SC3356
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3356 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
FEATURES
• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
• High Power Gain
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
PACKAGE DIMENSIONS
(Units: mm)
2.8±0.2
1.5
0.65
+0.1
0.15
2
13
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
20
Collector to Emitter Voltage VCEO
12
Emitter to Base Voltage
VEBO
3.0
Collector Current
IC 100
Total Power Dissipation
PT
200
Junction Temperature
Tj
150
Storage Temperature
Tstg 65 to +150
V
V
V
mA
mW
C
C
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITIONS
Collector Cutoff Current
Emitter Cutoff Current
ICBO
IEBO
1.0 A VCB = 10 V, IE = 0
1.0 A VEB = 1.0 V, IC = 0
DC Current Gain
hFE* 50 120 300
VCE = 10 V, IC = 20 mA
Gain Bandwidth Product
fT
7 GHz VCE = 10 V, IC = 20 mA
Feed-Back Capacitance
Insertion Power Gain
Cre**
S21e2
0.55
11.5
1.0
pF VCB = 10 V, IE = 0, f = 1.0 MHz
dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz
Noise Figure
NF 1.1 2.0 dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz
* Pulse Measurement PW  350 s, Duty Cycle  2 %
** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
hFE Classification
Class
R23/Q *
R24/R *
R25/S *
Marking
R23
R24
R25
hFE
50 to 100
80 to 160
125 to 250 * Old Specification / New Specification
Document No. P10356EJ5V1DS00 (5th edition)
Date Published March 1997 N
Printed in Japan
© 1985

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TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free Air
200
100
0 50 100 150
TA-Ambient Temperature-°C
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 10 V
100
50
20
10
0.5
1 5 10
IC-Collector Current-mA
50
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
VCE = 10 V
0.1
0 0.5 1.0
5.0 10 30
IC-Collector Current-mA
2SC3356
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
2
f = 1.0 MHz
1
0.5
0.3
0 0.5 1 2
5 10 20 30
VCB-Collector to Base Voltage-V
INSERTION GAIN vs.
COLLECTOR CURRENT
15
10
5
VCE = 10 V
f = 1.0 GHz
0
0.5 1
5 10
IC-Collector Current-mA
50 70
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
Gmax
20
|S21e|2
10
VCE = 10 V
IC = 20 mA
0
0.1 0.2 0.4 0.6 0.81.0 2
f-Frequency-GHz
2

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2SC3356
NOISE FIGURE vs.
COLLECTOR CURRENT
7 VCE = 10 V
f = 1.0 GHz
6
5
4
3
2
1
0
0.5 1
5 10
IC-Collector Current-mA
50 70
S-PARAMETER
VCE = 10 V, IC = 5 mA, ZO = 50
f (MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
S11
0.651
0.467
0.391
0.360
0.360
0.361
0.381
0.398
0.423
0.445
 S11
69.3
113.3
139.3
159.2
176.9
172.7
160.3
152.2
143.3
137.6
S21
10.616
6.856
4.852
3.802
3.098
2.646
2.298
2.071
1.836
1.689
VCE = 10 V, IC = 5 mA, ZO = 50
f (MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
S11
0.339
0.258
0.243
0.242
0.260
0.269
0.294
0.314
0.343
0.367
 S11
107.0
147.3
167.7
177.0
164.5
157.6
148.7
143.1
136.5
131.4
S21
16.516
8.928
6.022
4.633
3.744
3.193
2.750
2.479
2.185
2.016
18
15
12
6
3
0
 S21
129.3
104.4
90.9
81.2
72.9
67.3
59.3
55.2
49.0
46.2
 S21
108.7
92.1
83.0
76.2
69.9
65.7
58.8
55.5
50.1
47.8
NOISE FIGURE, FORWARD INSERTION
GAIN vs. COLLECTOR TO EMITTER VOLTAGE
5
f = 1.0 GHz
IC = 20 mA
4
|S21e|2
3
2
NF
1
0 2 4 6 8 10
VCE-Collector to Emitter Voltage-V
S12
0.051
0.071
0.086
0.101
0.118
0.137
0.157
0.180
0.203
0.220
 S12
59.2
54.4
56.0
59.1
61.0
63.5
63.3
64.1
63.7
64.7
S22
0.735
0.550
0.468
0.426
0.397
0.373
0.360
0.337
0.320
0.302
 S22
28.1
34.1
33.9
33.6
35.7
38.3
43.0
45.9
52.3
52.2
S12
0.035
0.060
0.085
0.109
0.136
0.160
0.187
0.212
0.238
0.254
 S12
66.1
71.0
71.9
72.2
70.4
69.9
66.7
65.2
62.4
61.6
S22
0.459
0.343
0.305
0.284
0.266
0.246
0.233
0.208
0.190
0.173
 S22
36.6
32.9
29.9
29.4
31.7
35.0
40.4
43.6
50.5
48.3
3

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S-PARAMETER
S11e, S22e-FREQUENCY
CONDITION VCE = 10 V
200 MHz Step
0.09
0.007.413300.008.42
0.41
120
0.10
0.40
110
0.11
0.39
100
0.12 0.13
0.38 0.37
90
0.2
0.14
0.36
80
0.15
0.35
70
0.16
0.34
060
0.303.17
0.302.18
50
ENT 0.4
2.0 GHz
0.6
0.8
1.0
3.0
4.0
6.0
0.1
0.2
0.3
0.4
S11e
10
20
50
REACTANCE COMPONENT
( )––R––
ZO
0.2 0.2 GHz IC = 20 mA
0.4
S0.6 22e
0.8 IC = 5 mA
IC = 20 mA
0.2 GHz
0.2 GHz
IC = 5 mA
2SC3356
S21e-FREQUENCY
CONDITION VCE = 10 V
IC = 20 mA
120°
90°
0.2 GHz
150°
S21e
60° 120°
30° 150°
180°
2.0 GHz 5
10 15 20
0° 180°
S12e-FREQUENCY
CONDITION VCE = 10 V
IC = 20 mA
90°
2.0 GHz
60°
S12e
30°
0.2 GHz
0.05 0.1 0.15 0.2 0.250°
150°
120°
90°
30°
150°
60°
120°
90°
30°
60°
4

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[MEMO]
2SC3356
5