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Ordering number:EN1421A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1338/2SC3392
High-Speed Switching Applications
Features
· Adoption of FBET process.
· High breakdown voltage : VCEO=(–)50V.
· Large current capacitiy and high fT.
· Very small-sized package permitting sets to be small-
sized, slim.
Package Dimensions
unit:mm
2018A
[2SA1338/2SC3392]
Switching Time Test Circuit
( ) : 2SA1338
(For PNP, the polarity is reversed)
Unit (resistance : , capacitance : F)
Specifications
C : Collector
B : Base
E : Emitter
SANYO : CP
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Ratings
(–)60
(–)50
(–)5
(–)500
(–)800
200
150
–55 to +150
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
min typ max
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
ICBO
IEBO
hFE
fT
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)10mA
VCE=(–)10V, IC=(–)50mA
100*
300
(200)
(–)0.1
(–)0.1
560*
Common Base Output Capacitance
Collector-to-Emitter Saturation Voltage
Cob VCB=(–)10V, f=1MHz
VCE(sat) IC=(–)100mA, IB=(–)10mA
3.7
(5.6)
0.1
(0.15)
0.3
(0.4)
Base-to-Emitter Saturation Voltage
VBE(sat) IC=(–)100mA, IB=(–)10mA
0.8
Collector-to-Base Breakdown Voltage
V(BR)CBO IC=(–)10µA, IE=0
(–)60
Collector-to-Emitter Breakdown Voltage
V(BR)CEO IC=(–)100µA, RBE=
(–)50
Emitter-to-Base Breakdown Voltage
V(BR)EBO IE=(–)10µA, IC=0
(–)5
Turn-ON Time
ton
70(70)
Storage Time
tstg VCC=20V
IC=10IB1=–10IB2=100mA
400
(400)
Fall Time
tf
70(50)
* : The 2SA1338/2SC3392 are classified by 10mA hFE as follows :
2SA1338
2SC3392
Note : 2SA1338 Marking : AL, 2SC3392 Marking : AY
hFE rank : 4, 5, 6, 7
100 4 200 140 5 280 200 6 400 280 7 560
1.2
Unit
V
V
V
mA
mA
mW
˚C
˚C
Unit
µA
µA
MHz
pF
V
V
V
V
V
ns
ns
ns
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/3197KI/1114KI, MT No.1421-1/4

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2SA1338/2SC3392
No.1421-2/4

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2SA1338/2SC3392
No.1421-3/4

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2SA1338/2SC3392
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of July, 1998. Specifications and information herein are subject to
change without notice.
PS No.1421-4/4