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New Product
V10P10
Vishay General Semiconductor
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.453 V at IF = 5 A
TMBS® eSMP® Series
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
K • Trench MOS Schottky technology
• Low forward volatge drop, low power losses
1 • High efficiency operation
2 • Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
100 V
IFSM
180 A
EAS 100 mJ
VF at IF = 10 A
0.574 V
TJ max.
150 °C
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
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M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV)
IFSM
Non-repetitive avalanche energy
at IAS = 2.0 A, TJ = 25 °C
Peak repetitive reverse current at tp = 2 µs, 1 kHz,
TJ = 38 °C ± 2 °C
Operating junction and storage temperature range
EAS
IRRM
TJ, TSTG
V10P10
V1010
100
10
180
100
1.0
- 40 to + 150
UNIT
V
A
A
mJ
A
°C
Document Number: 89006 For technical questions within your region, please contact one of the following:
Revision: 25-May-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/

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V10P10
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage
IR = 1 mA
IF = 5 A
IF = 10 A
IF = 5 A
IF = 10 A
Reverse current
VR = 70 V
VR = 100 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR
VF (1)
IR (2)
100 (minimum)
0.512
0.625
0.453
0.574
7.1
4.5
30.4
10.4
MAX.
-
-
0.68
-
0.62
-
-
150
20
UNIT
V
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
V10P10
Typical thermal resistance
RJA (1)
RJL
60
3
Note
(1) Units mounted on recommended PCB 1 oz. pad layout
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UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
V10P10-M3/86A
0.10
V10P10-M3/87A
V10P10HM3/86A (1)
V10P10HM3/87A (1)
0.10
0.10
0.10
Note
(1) Automotive grade
PACKAGE CODE
86A
87A
86A
87A
BASE QUANTITY
1500
6500
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
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2
For technical questions within your region, please contact one of the following: Document Number: 89006
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 25-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/

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New Product
V10P10
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 C unless otherwise noted)
12
Resistive or Inductive Load
10
8
6
4
2 TL measured
at the Cathode Band Terminal
0
0 25 50 75 100 125 150 175
Lead Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
8
D = 0.3 D = 0.5 D = 0.8
7 D = 0.2
6 D = 0.1
5
D = 1.0
4
3T
2
1
D = tp/T
tp
0
0 1 2 3 4 5 6 7 8 9 10 11 12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
100
TA = 150 °C
10
TA = 125 °C
1
0.1 TA = 25 °C
0.01
0
0.2 0.4 0.6 0.8
Instantaneous Forward Voltage (V)
1.0
Fig. 3 - Typical Instantaneous Forward Characteristics
100
TA = 150 °C
10
1 TA = 125 °C
0.1
0.01
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
10 000
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1000
100
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
100
Junction to Ambient
10
1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance
Document Number: 89006 For technical questions within your region, please contact one of the following:
Revision: 25-May-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/