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New Product
V10P45
Vishay General Semiconductor
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
TMBS®
Ultra Low VF = 0.34 V at IF = 5 A
FEATURES
eSMP® Series
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
K • Trench MOS Schottky technology
• Low forward voltage drop, low power losses
1 • High efficiency operation
2 • Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
TO-277A (SMPC)
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
K Anode 1
Halogen-free according to IEC 61249-2-21 definition
Cathode
Anode 2
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
For use in low voltage high frequency DC/DC converters,
freewheeling, and polarity protection applications.
IF(AV)
VRRM
IFSM
VF at IF = 10 A
TJ max.
10 A
45 V
180 A
0.41 V
150 °C
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Basewww.DataSheet.co.kr P/NH-M3 - halogen-free, RoHS compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
VRRM
IF (1)
IF (2)
IFSM
Operating junction and storage temperature range
TJ, TSTG
Notes
(1) Mounted on 30 mm x 30 mm pad areas aluminum PCB
(2) Free air, mounted on recommended copper pad area
V10P45
V1045
45
10
4.4
180
- 40 to + 150
UNIT
V
A
A
°C
Document Number: 89340 For technical questions within your region, please contact one of the following:
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/

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V10P45
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
IF = 5.0 A
IF = 10 A
IF = 5.0 A
IF = 10 A
Reverse current
VR = 45 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
0.42
0.48
0.34
0.41
21
9
MAX.
-
0.57
-
0.50
800
35
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V10P45
Typical thermal resistance
RJA (1)
RJM (2)
75
4
Notes
(1) Free air, mounted on recommended copper pad area; thermal resistance RJA - junction to ambient
(2) Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance RJM - junction to mount
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODEwww.DataSheet.co.kr
V10P45-M3/86A
0.10
86A
V10P45-M3/87A
0.10
87A
V10P45HM3/86A (1)
0.10
86A
V10P45HM3/87A (1)
0.10
87A
Note
(1) AEC-Q101 qualified
BASE QUANTITY
1500
6500
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
TM = 121 °C (1)
10
8
Notes
(1) Mounted on 30 mm x 30 mm aluminum PCB; TM measured
at the terminal of cathode band (RJM = 4 °C/W)
(2) Free air, mounted on recommended copper pad area
(RJA = 75 °C/W)
6
TA = 25 °C (2)
4
2
0
0 25 50 75 100 125 150
TM - Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
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For technical questions within your region, please contact one of the following: Document Number: 89340
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 19-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/

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New Product
V10P45
Vishay General Semiconductor
7
D = 0.5 D = 0.8
6 D = 0.3
D = 0.2
5
D = 0.1
4
D = 1.0
3
T
2
1
D = tp/T
tp
0
0 2 4 6 8 10 12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
100
TA = 150 °C
10 TA = 125 °C
1 TA = 100 °C
0.1
0
TA = 25 °C
0.1 0.2 0.3 0.4 0.5 0.6 0.7
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1
0.1
0.01
TA = 25 °C
0.001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
100
Junction to Ambient
www.DataSheet.co.kr
10
1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance
Document Number: 89340 For technical questions within your region, please contact one of the following:
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/