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New Product
V10P45S
Vishay General Semiconductor
SMD Photovoltaic Solar Cell Protection Schottky Rectifier
Ultra Low VF = 0.34 V at IF = 5 A
TMBS® eSMP® Series
K
1
2
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
45 V
IFSM
180 A
VF at IF = 10 A
0.41 V
TOP max.
150 °C
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable
www.DataSheet.co.kr
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
VRRM
IF (1)
IF (2)
IFSM
Junction temperature in DC forward current
without reverse bias, t 1 h
TJ (3)
Operating junction temperature range
Storage temperature range
TOP
TSTG
Notes
(1) Mounted on 30 mm x 30 mm aluminum PCB
(2) Free air, mounted on recommended copper pad area
(3) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
V10P45S
1045S
45
10
4.4
180
200
- 40 to + 150
- 40 to + 175
UNIT
V
A
A
°C
°C
°C
Document Number: 89341 For technical questions within your region, please contact one of the following:
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/

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V10P45S
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
IF = 5.0 A
IF = 10 A
IF = 5.0 A
IF = 10 A
Reverse current
VR = 45 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
0.42
0.48
0.34
0.41
21
9
MAX.
-
0.57
-
0.50
800
35
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V10P45S
Typical thermal resistance
RJA (1)
RJM (2)
75
4
Notes
(1) Free air, mounted on recommended copper pad area; thermal resistance RJA - junction to ambient
(2) Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance RJM - junction to mount
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODEwww.DataSheet.co.kr
V10P45S-M3/86A
0.10
86A
V10P45S-M3/87A
0.10
87A
BASE QUANTITY
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
TM = 126 °C (1)
10
8
6
TA = 25 °C (2)
4
2
0
0 25 50 75 100 125 150
TM - Mount Temperature (°C)
Fig. 1 - Forward Current Derating Curve
Notes
(1) Mounted on 30 mm x 30 mm aluminum PCB; TM measured
at the terminal of cathode band (RJM = 4 °C/W)
(2) Free air, mounted on recommended copper pad area
(RJA = 75 °C/W)
www.vishay.com
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For technical questions within your region, please contact one of the following: Document Number: 89341
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 19-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/

No Preview Available !

New Product
V10P45S
Vishay General Semiconductor
7
D = 0.5 D = 0.8
6 D = 0.3
D = 0.2
5
D = 0.1
4
D = 1.0
3
T
2
1
D = tp/T
tp
0
0 2 4 6 8 10 12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
100
TA = 150 °C
10 TA = 125 °C
1 TA = 100 °C
0.1
0
TA = 25 °C
0.1 0.2 0.3 0.4 0.5 0.6 0.7
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1
0.1
0.01
TA = 25 °C
0.001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
100
Junction to Ambient
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10
1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance
Document Number: 89341 For technical questions within your region, please contact one of the following:
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/