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V10PL45
Vishay General Semiconductor
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.28 V at IF = 5 A
TMBS® eSMP® Series
K
1
2
TO-277A (SMPC)
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2011/65/EU
Halogen-free according to IEC 61249-2-21 definition
K
Cathode
Anode 1
Anode 2
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling, and polarity protection applications.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 10 A
TJ max.
10 A
45 V
200 A
0.35 V
150 °C
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals:www.DataSheet.co.kr Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
VRRM
IF (1)
IF (2)
IFSM
Operating junction and storage temperature range (AC mode)
TJ, TSTG
Notes
(1) Mounted on 30 mm x 30 mm pad areas aluminum PCB
(2) Free air, mounted on recommended copper pad area
V10PL45
V10L45
45
10
6.0
200
- 40 to + 150
UNIT
V
A
°C
Revision: 23-Feb-12
1 Document Number: 89479
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/

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V10PL45
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
IF = 5.0 A
IF = 10 A
IF = 5.0 A
IF = 10 A
Reverse current
VR = 45 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
0.39
0.44
0.28
0.35
-
30
MAX.
-
0.52
-
0.43
5.0
75
UNIT
V
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V10PL45
Typical thermal resistance
RJA (1)
RJM (2)
68
4
Notes
(1) Free air, mounted on recommended copper pad area; thermal resistance RJA - junction to ambient
(2) Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance RJM - junction to mount
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
V10PL45-M3/86A
0.10
86A
V10PL45-M3/87A
0.10
87A
www.DataSheet.co.kr
BASE QUANTITY
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
TM = 130 °C
10
8
6 TA = 25 °C
4
2
0
0 25 50 75 100 125 150 175
TM - Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Notes
(1) Mounted on 30 mm x 30 mm aluminum PCB; TM measured
at the terminal of cathode band (RJM = 4 °C/W)
(2) Free air, mounted on recommended copper pad area
(RJA = 68 °C/W)
Revision: 23-Feb-12
2 Document Number: 89479
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/

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5.0
D = 0.2 D = 0.3 D = 0.5 D = 0.8
4.0 D = 0.1
D = 1.0
3.0
2.0
T
1.0
D = tp/T
tp
0.0
0 2 4 6 8 10 12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
100
TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
1000
100
10
1
TA = 150 °C
TA = 125 °C
TA = 100 °C
0.1
TA = 25 °C
0.01
0.001
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
V10PL45
Vishay General Semiconductor
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
0.1 1 10
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
100
Junction to Ambient
10
www.DataSheet.co.kr
1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 23-Feb-12
3 Document Number: 89479
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/