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OC1005
N-channel TrenchMOS standard level FET
Rev. 02 — 10 December 2007
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology.
1.2 Features
I Standard level threshold
I Very low on-state resistance
1.3 Applications
I Motors, lamps, solenoids
I DC-to-DC converters
I Uninterrupted power supplies
I General industrial applications.
1.4 Quick reference data
I VDS 55 V
I Ptot 200 W
2. Pinning information
I ID 110 A
I RDSon 7.1 m
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Table 1.
Pin
1
2
3
mb
Pinning
Description
gate (G)
drain (D)
source (S)
mounting base;
connected to drain
Simplified outline Symbol
mb D
G
mbb076 S
123
SOT78 (TO-220AB)
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NXP Semiconductors
OC1005
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2. Ordering information
Type number
Package
Name
OC1005
SC-46
4. Limiting values
Description
plastic single-ended package; heatsink mounted; 1 mounting hole;
3-lead TO-220AB
Version
SOT78
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
25 °C Tj 175 °C
25 °C Tj 175 °C; RGS = 20 k
Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; see Figure 2
Tmb = 25 °C; pulsed; tp 10 µs; see Figure 3
Tmb = 25 °C; see Figure 1
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IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp 10 µs
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 75 A;
tp = 0.1 ms; VDS 55 V; RGS = 50 ;
VGS = 10 V; starting at Tj = 25 °C
Min
-
-
-
[1] -
-
-
-
55
55
[1] -
-
-
Max
55
55
±20
110
80
390
200
+175
+175
110
390
280
[1] Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75 A.
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
OC1005_2
Product data sheet
Rev. 02 — 10 December 2007
© NXP B.V. 2007. All rights reserved.
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NXP Semiconductors
OC1005
N-channel TrenchMOS standard level FET
120
Pder
(%)
80
003aab844
120
Ider
(%)
100
80
package limiting
60 current 75 A
001aah320
40 40
20
0
0 50 100 150 200
Tmb (°C)
Pder = P----t--o--P-t-(--t2-o--5-t-°---C---) × 100 %
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
0
0 50 100 150 200
Tmb (°C)
Ider = -I--D----(-I-2-D-5---°--C---) × 100 %
Fig 2. Normalized continuous drain current as a
function of mounting base temperature
103
ID
(A)
102
Limit RDSon = VDS/ID
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003aab892
tp = 10 µs
100 µs
DC
10 1 ms
10 ms
1
1 10 102
VDS (V)
Tmb = 25 °C; IDM is single pulse; VGS = 10 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
OC1005_2
Product data sheet
Rev. 02 — 10 December 2007
© NXP B.V. 2007. All rights reserved.
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NXP Semiconductors
OC1005
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4. Thermal characteristics
Symbol Parameter
Conditions
Rth(j-mb) thermal resistance from junction to mounting base see Figure 4
Rth(j-a) thermal resistance from junction to ambient
vertical in free air
Min Typ Max Unit
- - 0.75 K/W
- 60 - K/W
003aab893
1
Zth(j-mb) δ = 0.5
(K/W)
0.2
101
0.1
0.01
0.02
single pulse
P
tp
δ=
T
102
104
103
102
101
tp
T
tp (s)
t
1
Fig 4. Transient thermal impedance from junction to mountingwww.DataSheet.co.kr base as a function of pulse duration
OC1005_2
Product data sheet
Rev. 02 — 10 December 2007
© NXP B.V. 2007. All rights reserved.
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NXP Semiconductors
OC1005
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = 55 °C
VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; see Figure 9 and 10
Tj = 25 °C
Tj = 175 °C
Tj = 55 °C
IDSS drain leakage current
VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
IGSS gate leakage current
VGS = ±20 V; VDS = 0 V
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A; see Figure 6 and 8
Tj = 25 °C
Tj = 175 °C
Dynamic characteristics
QG(tot) total gate charge
QGS gate-source charge
QGD
gate-drain charge
Ciss input capacitance
Coss output capacitance
Crss reverse transfer capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
I = 25 A; V = 44 V; V = 10 V;D
DS
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GS
see Figure 11 and 12
VGS = 0 V; VDS = 25 V; f = 1 MHz;
see Figure 14
VDS = 30 V; RL = 1.2 ;
VGS = 10 V; RG = 10
VSD source-drain voltage
trr reverse recovery time
Qr recovered charge
IS = 25 A; VGS = 0 V; see Figure 13
IS = 20 A; dIS/dt = 100 A/µs; VGS = 0 V
Min Typ Max Unit
55 - - V
50 - - V
234V
1- - V
- - 4.4 V
- - 1 µA
- - 500 µA
- 2 100 nA
- 5.8 7.1 m
- 10.6 14.2 m
- 53 - nC
- 12.3 - nC
- 17 - nC
- 2820 - pF
- 554 - pF
- 200 - pF
- 24 - ns
- 52 - ns
- 77 - ns
- 41 - ns
- 0.85 1.2 V
- 62 - ns
- 60 - nC
OC1005_2
Product data sheet
Rev. 02 — 10 December 2007
© NXP B.V. 2007. All rights reserved.
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Datasheet pdf - http://www.DataSheet4U.net/