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SEMICONDUCTOR
RFD16N03L,
RFD16N03LSM
December 1995
16A, 30V, Avalanche Rated N-Channel Logic Level
Enhancement-Mode Power MOSFETs
Features
Packaging
• 16A, 30V
• rDS(ON) = 0.022
Temperature Compensating PSPICE Model
• Can be Driven Directly from CMOS, NMOS,
and TTL Circuits
DRAIN (FLANGE)
JEDEC TO-251AA
SOURCE
DRAIN
GATE
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• +175oC Operating Temperature
JEDEC TO-252AA
DRAIN (FLANGE)
Description
The RFD16N03L and RFD16N03LSM are N-channel power
MOSFETs manufactured using the MegaFET process. This
process, which uses feature sizes approaching those of
LSI circuits, gives optimum utilization of silicon, resulting in
outstanding performance. They were designed for use in
applications such as switching regulators, switching convert-
ers, motor drivers and relay drivers. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate bias in the 3V - 5V
range, thereby facilitating true on-off power control directly
from logic level (5V) integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RFD16N03L
TO-251AA 16N03L
RFD16N03LSM
TO-252AA 16N03L
Symbol
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GATE
SOURCE
DRAIN
GATE
SOURCE
NOTE: When ordering, use the entire part number. Add the suffix
9A, to obtain the TO-252AA variant in tape and reel, e.g.
RFD16N03LSM9A.
Formerly developmental type TA49030.
Absolute Maximum Ratings TC = +25oC
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
RFD16N03L,
RFD16N03LSM
30
30
±10
16
Refer to Peak Current Curve
Refer to UIS Curve
90
0.606
-55 to +175
260
UNITS
V
V
V
A
W
W/oC
oC
oC
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1995
5-31
File Number 4013.1
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Specifications RFD16N03L, RFD16N03LSM
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction-to-Case
Thermal Resistance Junction-to-Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
tD(ON)
tR
tD(OFF)
tF
tOFF
QG(TOT)
QG(5)
QG(TH)
CISS
COSS
CRSS
RθJC
RθJA
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = 30V,
VGS = 0V
TC = +25oC
TC = +150oC
VGS = ±10V
ID = 16A, VGS = 5V
VDD = 15V, ID = 16A,
RL = 0.93, VGS = 5V,
RGS = 5
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 24V,
ID = 16A,
RL = 1.5
VDS = 25V, VGS = 0V,
f = 1MHz
TO-251 and TO-252
MIN TYP
30 -
1-
--
--
--
--
--
- 15
- 95
- 25
- 27
--
- 50
- 30
- 1.5
- 1650
- 575
- 200
--
--
Source-Drain Diode Specifications
PARAMETERS
SYMBOL
Forward Voltage
Reverse Recovery Time
VSD
tRR
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TEST CONDITIONS
ISD = 16A
ISD = 16A, dISD/dt = 100A/µs
MIN TYP
--
--
MAX
-
2
1
50
100
0.022
120
-
-
-
-
80
60
36
1.8
-
-
-
1.65
100
UNITS
V
V
µA
µA
nA
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
oC/W
oC/W
MAX
1.5
75
UNITS
V
ns
5-32
Datas

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RFD16N03L, RFD16N03LSM
Typical Performance Curves
TC = +25oC
500
100
100µs
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1
1
VDSS MAX = 30V
10
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
1ms
10ms
100ms
DC
50
FIGURE 1. SAFE OPERATING AREA CURVE
2
1
0.5
0.2
PDM
0.1 0.1
.05
.02
.01
SINGLE PULSE
0.01
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
10-5
10-4
10-3
10-2
10-1
100 101
t, RECTANGULAR PULSE DURATION (s)
FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
20 TC = +25oC
500
VGS = 10V
FOR TEMPERATURES
ABOVE +25oC DERATE PEAK
15 VGS = 5V CURRENT AS FOLLOWS:
I = I25 175 - TC
150
100
10
TRANSCONDUCTANCE
5 MAY LIMIT CURRENTwww.DataSheet.co.kr
IN THIS REGION
0
25
50 75 100 125
TC, CASE TEMPERATURE (oC)
150
175
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
10
10-5
10-4
10-3
10-2
10-1
100
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
101
100
VGS = 10V
75
50
PULSE DURATION = 250µs, TC = +25oC
VGS = 5V
VGS = 4.5V
VGS = 4V
VGS = 3.5V
25
VGS = 3V
0
0 1.0 2.0 3.0 4.0 5.0
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
VDD = 15V
100
-55oC
+175oC
75
+25oC
50
25
0
0
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
1.5 3.0 4.5 6.0
VGS, GATE-TO-SOURCE VOLTAGE (V)
7.5
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
5-33
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RFD16N03L, RFD16N03LSM
Typical Performance Curves (Continued)
ID = 250µA
2.0 2.0
VGS = VDS, ID = 250µA
1.5 1.5
1.0 1.0
0.5 0.5
0.0
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 7. NORMALIZED DRAIN-SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
0.0
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
PULSE DURATION = 250µs, VGS = 5V, ID = 16A
2.0 100
1.5 75
1.0
0.5
50
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25
TJ = 25oC, PULSE DURATION = 250µs
ID = 32A
ID = 16A
ID = 8A
ID = 2A
0.0
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED rDS(ON) vs JUNCTION
TEMPERATURE
200
0
2.5 3.0 3.5 4.0 4.5 5.0
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 10. TYPICAL rDS(ON) FOR VARYING CONDITIONS OF
GATE VOLTAGE AND DRAIN CURRENT
VDD = 15V, IDD = 16A, RL = 0.93
250 tR
200
tF
150
tD(ON)
100
tD(OFF)
50
0
0 10 20 30 40 50
RGS, GATE-TO-SOURCE RESISTANCE ()
FIGURE 11. TYPICAL SWITCHING TIME AS A FUNCTION OF
GATE RESISTANCE
30
VDD = BVDSS
24
VDD = BVDSS
5
4
18 3
12
0.75
0.50
0.25
BBBVVVDDDSSSSSS
6 RIGL(R=EF1).8=705.6mA
VGS = 5V
0
IG(REF)
IG(REF)
20
IG(ACT)
t, TIME (s) 80
IG(ACT)
2
1
0
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO HARRIS
APPLICATION NOTES AN7254 AND AN7260
5-34
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RFD16N03L, RFD16N03LSM
Typical Performance Curves (Continued)
2500
VGS = 0V, f = 1MHz
2000
1500
CISS
1000
500
COSS
CRSS
0
0 5 10 15 20 25
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 13. TYPICAL CAPACITANCE vs VOLTAGE
200
100
STARTING TJ = +25oC
10 STARTING TJ = +150oC
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
tAV=(L/R)ln[(IAS*R)/(1.3*RATED BVDSS-VDD) +1]
1
0.001
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
100
FIGURE 14. UNCLAMPED INDUCTIVE SWITCHING. REFER TO
HARRIS APPLICATION NOTES AN9321 AND
AN9322
1.2
1.0
0.8
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0.6
0.4
0.2
0.0 0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 15. NORMALIZED POWER DISSIPATION vs TEMPERATURE DERATING CURVE
5-35
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