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S T U/D2030P LS
S amHop Microelectronics C orp.
Aug 20 2005
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( m W ) Max
-30V
-20A
32 @ VGS = -10V
55 @ VGS = -4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-252 and TO-251 P ackage.
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
GDS
S TU S E R IE S
TO-251(l-P AK)
D
G
S
AB S OLUT E MAXIMUM R AT ING S (T A=25www.DataSheet.co.kr C unles s otherwis e noted)
P arameter
Drain-S ource Voltage
S ymbol
VDS
Limit
-30
Unit
V
Gate-S ource Voltage
VGS 20 V
Drain C urrent-C ontinuous @ Tc=25 C
-P ulsed a
ID
IDM
-20
-60
A
A
Drain-S ource Diode Forward C urrent
IS
-20
A
Maximum P ower Dissipation @ Tc=25 C
PD
50
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 175
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
R JC
R JA
3
50
C /W
C /W
1
Datasheet pdf - http://www.DataSheet4U.net/

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S T U/D2030P LS
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ C Max Unit
5 OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS a
BVDSS VGS =0V, ID =-250uA -25
IDSS VDS =-20V, VGS =0V
IGSS VGS = 20V, VDS= 0V
V
-1 uA
100 nA
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = -250uA -1 -1.7 -3 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =-10V, ID= -20A
VGS =-4.5V, ID =-10A
27 32 m ohm
41 55 m ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS b
ID(ON)
gFS
VDS = -10V, VGS = -10V
V DS = -10V, ID= -10Awww.DataSheet.co.kr
-30
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
C IS S
COSS
VDS =-15V, VGS = 0V
f =1.0MHZ
CRSS
Gate resistance
R g VGS =0V, VDS = 0V, f=1.0MHZ
SWITCHING CHARACTERISTICS b
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
tD(ON) VDD = -15V
tr ID = -1 A
tD(O F F )
VGS = -10V
R GEN = 6 ohm
tf
14
950
250
170
2.6
10
22
68.8
38.5
A
S
PF
PF
PF
ohm
ns
ns
ns
ns
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate-S ource Charge
Gate-Drain Charge
Qg
VDS =-15V, ID = -20A
VGS =-10V
Qgs
Qgd
2
18.5
9.6
1.6
5.8
nC
nC
nC
nC
Datasheet pdf - http://www.DataSheet4U.net/

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S T U/D2030P LS
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
DRAIN-SOURCE DIODE CHARACTERISTICS a
Diode Forward Voltage
VSD VGS = 0V, Is = -10A
Min Typ Max Unit
-0.9 -1.3 V
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
25
V GS =-4V
20 V GS =-4.5V
15 V GS =-5V
10
V GS =-8V
V GS =-3V
V GS =-10V
5
0
0 0.5 1 1.5 2 2.5 3
-V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
20
15
10
www.DataSheet.co.kr
5
T j=125 C
25 C
-55 C
0
0 0.7 1.4 2.1 2.8 3.5 4.2
-V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
60
50
V GS =-4.5V
40
30
20 V GS =-10V
10
0
0 5 10 15 20 25
-ID, Drain C urrent (A)
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
1.6
1.4 V G S =-10V
ID=-20A
1.2
1.0
0.8
V G S =-4.5V
0.6 ID=-10A
0.4
-55
-25 0 25 50 75 100 125
T j( C )
T j, J unction T emperature ( C )
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3
Datasheet pdf - http://www.DataSheet4U.net/