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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD425 2SD426
DESCRIPTION
·With TO-3 package
·Complement to type 2SB555/556
·High power dissipation
APPLICATIONS
·Power amplifier applications
·Recommended for high-power high-fidelity
audio frequency amplifier output stage
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
www.DataSheet.co.kr
CONDITIONS
VCBO
Collector-base voltage
2SD425
2SD426
Open emitter
VCEO
Collector-emitter voltage
2SD425
2SD426
Open base
VEBO
IC
IE
Emitter-base voltage
Collector current
Emitter current
Open collector
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
TC=25
VALUE
140
120
140
120
5
12
12
100
150
-65~150
UNIT
V
V
V
A
A
W
Datasheet pdf - http://www.DataSheet4U.net/

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SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SD425
2SD426
IC=0.1A ;IB=0
V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0
VCEsat
Collector-emitter
saturation voltage
2SD425 IC=7A; IB=0.7A
2SD426 IC=6A; IB=0.6A
VBE Base-emitter on voltage
IC=7A ; VCE=5V
ICBO Collector cut-off current
VCB=50V; IE=0
IEBO Emitter cut-off current
hFE DC current gain
VEB=5V; IC=0
www.DataSheet.co.kr
IC=2A ; VCE=5V
fT Transition frequency
IC=2A ; VCE=5V
Product Specification
2SD425 2SD426
MIN TYP. MAX UNIT
140
V
120
5V
3.0 V
2.5 V
0.1 mA
0.1 mA
40 140
5 MHz
2
Datasheet pdf - http://www.DataSheet4U.net/

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SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
Product Specification
2SD425 2SD426
www.DataSheet.co.kr
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Datasheet pdf - http://www.DataSheet4U.net/