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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SD428
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·High Power Dissipation-
: PC= 60W(Max)@TC=25
·Complement to Type 2SB558
APPLICATIONS
·Designed for power amplifier applications.
·Recommended for 40W high-fidelity audio frequency
amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
www.DataSheet.co.kr
V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
7A
IE Emitter Current-Continuous
Collector Power Dissipation
PC @TC=25
TJ Junction Temperature
-7 A
60 W
150
Tstg Storage Temperature
-65~150
isc Websitewww.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/

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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SD428
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A
VBE(on) Base-Emitter On Voltage
IC= 5A; VCE= 5V
ICBO Collector Cutoff Current
VCB= 50V; IE= 0
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 5A; VCE= 5V
COB Output Capacitance
I = 0; V = 10V; f= 1MHzE
CBw w w . D a t a S h e e t . c o . k r
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
MIN TYP. MAX UNIT
100 V
5V
2.5 V
2.0 V
0.1 mA
0.1 mA
40 140
15
140 pF
7 MHz
‹ hFE-1 Classifications
RO
40-80
70-140
isc Websitewww.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/