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STY60NM50
N-CHANNEL 500V - 0.045- 60A Max247
Zener-Protected MDmesh™Power MOSFET
TYPE
VDSS
RDS(on)
ID
STY60NM50
500V
< 0.05
60 A
n TYPICAL RDS(on) = 0.045
n HIGH dv/dt AND AVALANCHE CAPABILITIES
n IMPROVED ESD CAPABILITY
n LOW INPUT CAPACITANCE AND GATE
CHARGE
n LOW GATE INPUT RESISTANCE
n TIGHT PROCESS CONTROL
n INDUSTRY’S LOWEST ON-RESISTANCE
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
www.DataSheet.co.kr
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
3
2
1
Max247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
August 2002
Value
Unit
500 V
500 V
±30 V
60 A
37.8
A
240 A
560 W
6 KV
4.5 W/°C
15 V/ns
–65 to 150
°C
150 °C
(1)ISD 60A, di/dt 400A/µs, VDD V(BR)DSS, Tj TJMAX
1/8
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STY60NM50
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
Rthj-amb Thermal Resistance Junction-ambient
Max
Tl Maximum Lead Temperature For Soldering Purpose
0.22
30
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 35 V)
Max Value
30
1.4
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
500
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
10
100
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
± 10
°C/W
°C/W
°C
Unit
A
J
Unit
V
µA
µA
µA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 30Awww.DataSheet.co.kr
Min.
3
Typ.
4
0.045
Max.
5
0.05
Unit
V
DYNAMIC
Symbol
Parameter
Test Conditions
gfs (1)
Ciss
Forward Transconductance
Input Capacitance
VDS > ID(on) x RDS(on)max,
ID = 30A
VDS = 25V, f = 1 MHz, VGS = 0
Coss
Crss
Output Capacitance
Reverse Transfer
Capacitance
RG Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min.
Typ.
35
7500
980
200
1.5
Max.
Unit
S
pF
pF
pF
2/8
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STY60NM50
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 250V, ID = 30A
RG = 4.7VGS = 10V
(see test circuit, Figure 3)
Qg Total Gate Charge
Qgs Gate-Source Charge
VDD = 400V, ID = 60A,
VGS = 10V
Qgd Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf Fall Time
tc Cross-over Time
Test Conditions
VDD = 400V, ID = 60A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Min.
Typ.
51
58
190
53
97
Max.
266
Unit
ns
ns
nC
nC
nC
Min.
Typ.
51
46
108
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 60A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 60A, di/dt = 100A/µs,
VDD = 100 V, Tj = 25°C
(see test circuit, Figure 5)
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I = 60A, di/dt = 100A/µs,SD
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VDD = 100 V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
532
9.9
37
636
13.4
42
Max.
60
240
1.5
Unit
A
A
V
ns
µC
A
ns
µC
A
Safe Operating Area
Thermal Impedance
3/8
Datasheet pdf - http://www.DataSheet4U.net/