J569LS.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 J569LS 데이타시트 다운로드

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Ordering number : ENN6898
Features
Low ON-resistance.
Ultrahigh-speed switching.
2SJ569LS
P-Channel Silicon MOSFET
2SJ569LS
Ultrahigh-Speed Switching Applications
Package Dimensions
unit : mm
2078B
10.0
3.2
[2SJ569]
4.5
2.8
0.9
1.2
0.75
1 23
0.7
1 : Gate
2 : Drain
3 : Source
Specifications
Absolute Maximum Ratings at Ta=25°C
2.55 2.55
SANYO : TO-220FI-LS
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
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Conditions
PW10µs, duty cycle1%
Tc=25°C
Ratings
--300
±30
--5
--20
2.0
30
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Sourse Leakage Current
Cutoff Voltage
Symbol
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
Conditions
ID=--1mA, VGS=0
IG=±100µA, VDS=0
VDS=--300V, VGS=0
VGS=±25V, VDS=0
VDS=--10V, ID=--1mA
min
--300
±30
--1.5
Ratings
typ
max
Unit
V
V
--100
µA
±10 µA
--2.5 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22201 TS IM TA-2231 No.6898-1/4
Datasheet pdf - http://www.DataSheet4U.net/

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2SJ569LS
Continued from preceding page.
Parameter
Forward Transfer Admittance
Static Drain-to-Sourse On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Symbol
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
Conditions
VDS=--10V, ID=--3A
ID=--3A, VGS=--10V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit
See specified Test Circui
See specified Test Circuit
See specified Test Circuit
IS=--5A, VGS=0
Switching Time Test Circuit
VIN
0V
--10V
VDD= --100V
ID= --3A
RL=33.3
PW=10µs
D.C.1%
VIN
G
D VOUT
P.G 50
2SJ569LS
S
min
3
Ratings
typ
5
0.95
750
170
76
24
37
230
110
--1.0
max
1.25
--1.5
Unit
S
pF
pF
pF
ns
ns
ns
ns
V
ID -- VDS
--5.0
--4.5
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--8
VDS= --10V
--7
ID -- VGS
--4.0
--3.5 --6 75°C
--3.5V
--3.0
--5
--2.5
--4
--2.0
--1.5
--3.0V
--1.0
--0.5 VGS= --2.5V
0
0 --3 --6 --9 --12 --15 --18 --21 --24 --27 --30
Drain-to-Source Voltage, VDS -- V IT01834
RDS(on) -- VGS
--2.0
Tc=25°C
--1.8 ID= --3A
--1.6
--3
--2
--1
0
0 --1 --2 --3 --4 --5 --6
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
2.0
ID= --3A
1.8 VGS= --10V
IT01835
1.6
--1.4
1.4
--1.2
1.2
--1.0
1.0
--0.8
0.8
--0.6
0.6
--0.4
0.4
--0.2
0
0
--2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Gate-to-Source Voltage, VGS -- V IT01836
0.2
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT01837
No.6898-2/4
Datasheet pdf - http://www.DataSheet4U.net/

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10
7 VDS= --10V
5
3
2
1.0
7
5
3
2
yfs-- ID
Tc= --25°C
75°C 25°C
2SJ569LS
--10
7 VGS = 0
5
3
2
--1.0
7
5
3
2
IF -- VSD
0.1
--0.1
10000
7
5
3
2
23
5 7 --1.0
23
5 7 --10
Drain Current, ID -- A
IT01838
Ciss, Coss, Crss -- VDS
f=1MHz
1000
7
5
3
2
100
7
5
3
2
10
0
1000
7
5
3
2
Ciss
Coss
Crss
--5 --10 --15 --20 --25 --30 --35 --40 --45 --50
Drain-to-Source Voltage, VDS -- V IT01840
SW Time -- ID
VDD=100V
VGS=10V
td (off)
100 tf
7
5
tr
3 td(on)
2
10
--0.1
3.0
23
5 7 --1.0
23
5
Drain Current, ID -- A
PD -- Ta
IT01842
2.5
2.0
1.5
1.0
0.5
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT01845
--0.1
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Diode Forward Voltage, VSD -- V
VGS -- Qg
--10
VDS= --10V
--9
IT01839
--8
--7
--6
--5
--4
--3
--2
--1
0
0 5 10 15 20 25 30
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--100
7
5
Total Gate Charge, Qg -- nC
ASO
3
2
IDP= --20A
35 40
IT01841
--10
7
ID= --5A
5
3
2
--1.0
7
5
3
2
Operation in this
DC operation
area is limited by RDS(on).
10µs
100µs
1ms
10ms
100ms
--0.1
7
5
3
2
Ta=25°C
--0.01 Single pulse
--1.0 2 3 5 7 --10
23
5 7 --100 2 3
5 7--1000
Drain-to-Source Voltage, VDS -- V IT01843
PD -- Tc
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT01844
No.6898-3/4
Datasheet pdf - http://www.DataSheet4U.net/