D103.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 D103 데이타시트 다운로드

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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SD103
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
·High Power Dissipation-
: PC= 25W(Max)@TC=25
Complement to Type 2SB503
APPLICATIONS
·Designed for audio power amplifier, power switching, DC-DC
converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
80
www.DataSheet.net/
V
50 V
VEBO
Emitter-Base Voltage
10 V
IC Collector Current-Continuous
3A
IE Emitter Current-Continuous
-3 A
IBB Base Current-Continuous
Collector Power Dissipation
PC @TC=25
TJ Junction Temperature
Tstg Storage Temperature
1A
25 W
150
-65~150
isc Websitewww.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.co.kr/

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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SD103
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 10mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB=B 0.3A
VBE(on) Base-Emitter On Voltage
IC= 0.5A; VCE= 5V
ICBO Collector Cutoff Current
VCB= 50V; IE= 0
IEBO Emitter Cutoff Current
VEB= 10V; IC= 0
hFE-1
DC Current Gain
I = 0.5A; V = 5VC
CEw w w . D a t a S h e e t . n e t /
hFE-2
DC Current Gain
IC= 2.5A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IE= -0.5A; VCE= 10V
COB Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
MIN TYP. MAX UNIT
50 V
80 V
10 V
1.0 V
1.5 V
1.0 V
20 μA
200 μA
30 300
15
1 MHz
200 pF
isc Websitewww.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.co.kr/