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Rad Hard 40V Quad Precision Low Power Operational
Amplifiers
ISL70417SEH
The ISL70417SEH contains four very high precision amplifiers
featuring the perfect combination of low noise vs power
consumption. Low offset voltage, low IBIAS current and low
temperature drift making them the ideal choice for applications
requiring both high DC accuracy and AC performance. The
combination of high precision, low noise, low power and small
footprint provides the user with outstanding value and flexibility
relative to similar competitive parts.
Applications for these amplifiers include precision active
filters, medical and analytical instrumentation, precision
power supply controls, and industrial controls.
The ISL70417SEH is offered in a 14 lead hermetic ceramic
flatpack package. The device is offered in an industry standard
pin configuration and operates over the extended temperature
range from -55°C to +125°C.
Applications
• Precision Instrumentation
• Spectral Analysis Equipment
• Active Filter Blocks
• Thermocouples and RTD Reference Buffers
• Data Acquisition
• Power Supply Control
Features
• Electrically Screened to DLA SMD# 5962-12228
• Low Input Offset Voltage . . . . . . . . . . . . . . . . . . ±110µV, Max.
• Superb Offset Temperature Coefficient . . . . . . 1µV/°C, Max.
• Input Bias Current. . . . . . . . . . . . . . . . . . . . . . . . . . ±5nA, Max.
• Input Bias Current TC . . . . . . . . . . . . . . . . . . . . ±5pA/°C, Max.
• Low Current Consumption . . . . . . . . . . . . . . . . . . . . . . . 440µA
• Voltage Noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8nV/Hz
• Wide Supply Range . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 40V
• Operating Temperature Range. . . . . . . . . . .-55°C to +125°C
• Radiation Environment
- SEL/SEB LETTH (VS = ±20V). . . . . . . . . 73.9 MeV•cm2/mg
- Total Dose, High Dose Rate . . . . . . . . . . . . . . . 300krad(Si)
- Total Dose, Low Dose Rate . . . . . . . . . . . . . . . 100krad(Si) *
* Product capability established by initial characterization. The
EH version is acceptance tested on a wafer by wafer basis to
50krad(Si) at low dose rate.
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C1
8.2nF
V+
-
R1 R2
VIN
1.84k 4.93k
ISL70417SEH
+
3.3nF C2
V-
OUTPUT
SALLEN-KEY LOW PASS FILTER (fC = 10kHz)
FIGURE 1. TYPICAL APPLICATION
6
4
2
GND
0
-2
BIAS
-4
-6 VS = ±15V
-8
0 50 100 150 200 250 300
krad(Si)
FIGURE 2. VOS SHIFT vs HIGH DOSE RATE RADIATION
July 2, 2012
FN7962.0
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 |Copyright Intersil Americas Inc. 2012. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
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ISL70417SEH
Ordering Information
ORDERING
NUMBER
PART NUMBER
(Notes 2, 3)
TEMPERATURE RANGE
(°C)
PACKAGE
(Pb-Free)
PKG.
DWG. #
5962R1222801VXC
ISL70417SEHVF
-55 to +125
14 Ld Flatpack
K14.A
ISL70417SEHF/PROTO
ISL70417SEHF/PROTO
-55 to +125
14 Ld Flatpack
K14.A
5962R1222801V9AX
ISL70417SEHVX
-55 to +125
DIE
ISL70417SEHX/SAMPLE
ISL70417SEHX/SAMPLE
-55 to +125
DIE
ISL70417SEHEVAL1Z
Evaluation Board
NOTES:
1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both
SnPb and Pb-free soldering operations.
2. For Moisture Sensitivity Level (MSL), please see device information page for ISL70417SEH. For more information on MSL please see tech brief TB363.
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2 July 2, 2012
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Pin Configuration
OUT_A
-IN_A
+IN_A
V+
+IN_B
-IN_B
OUT_B
Pin Descriptions
ISL70417SEH
(14 LD FLATPACK)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
500
IN-
500
PIN NAME
OUT_A
-IN_A
+IN_A
V+
+IN_B
-IN_B
OUT_B
OUT_C
-IN_C
+IN_C
V-
+IN_D
-IN_D
OUT_D
V+
IN+
CIRCUIT 1
V-
ISL70417SEH
ISL70417SEH
(14 LD FLATPACK)
TOP VIEW
1 14
2A
D 13
-+ +-
3 12
4 11
5 10
-+ +-
6B
C9
78
OUT_D
-IN_D
+IN_D
V-
+IN_C
-IN_C
OUT_C
EQUIVALENT CIRCUIT
Circuit 2
Circuit 1
Circuit 1
Circuit 3
Circuit 1
Circuit 1
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Circuit 2
Circuit 2
Circuit 1
Circuit 1
Circuit 3
Circuit 1
Circuit 1
Circuit 2
V+
OUT
V-
CIRCUIT 2
DESCRIPTION
Amplifier A output
Amplifier A inverting input
Amplifier A non-inverting input
Positive power supply
Amplifier B non-inverting input
Amplifier B inverting input
Amplifier B output
Amplifier C output
Amplifier C inverting input
Amplifier C non-inverting input
Negative power supply
Amplifier D non-inverting input
Amplifier D inverting input
Amplifier D output
V+
CAPACITIVELY
COUPLED
ESD CLAMP
V-
CIRCUIT 3
3 July 2, 2012
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ISL70417SEH
Absolute Maximum Ratings
Maximum Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....42V
Maximum Supply Voltage (LET = 73.9 MeVcm2/mg). . . . . . . . . . . ....40V
Maximum Differential Input Current . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Maximum Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Min/Max Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . V- - 0.5V to V+ + 0.5V
Max/Min Input current for Input Voltage >V+ or <V-. . . . . . . . . . . . . . . . ±20mA
Output Short-Circuit Duration (1 output at a time). . . . . . . . . . . . . . . . Indefinite
ESD Rating
Human Body Model (Tested per MIL-PRF-883 3015.7). . . . . . . . . . . 2kV
Machine Model (Tested per EIA/JESD22-A115-A) . . . . . . . . . . . . . . 300V
Charged Device Model (Tested per JESD22-C101D) . . . . . . . . . . . . . 2kV
Thermal Information
Thermal Resistance (Typical)
θJA (°C/W) θJC (°C/W)
14 Ld Flatpack (Notes 3, 4). . . . . . . . . . . . .
105
15
Maximum Storage Temperature Range . . . . . . . . . . . . . .-65°C to +150°C
Maximum Junction Temperature (TJMAX) . . . . . . . . . . . . . . . . . . . . .+150°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Recommended Operating Conditions
Ambient Operating Temperature Range . . . . . . . . . . . . . .-55°C to +125°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . .+150°C
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V (±2.25V) to 30V (±15V)
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
3. θJA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
4. For θJC, the "case temp" location is the center of the ceramic on the package underside.
Electrical Specifications VS ± 15V, VCM = 0, VO = 0V, TA = +25°C, unless otherwise noted. Boldface limits apply over the operating
temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50 - 300krad(Si)/s; and over a total
ionizing dose of 50krad(Si) with exposure a low dose rate of <10mrad(Si)/s.
PARAMETER
DESCRIPTION
CONDITIONS
MIN MAX
(Note 5) TYP (Note 5) UNIT
VOS Input Offset Voltage
10 75 µV
110 µV
TCVOS
IB
Offset Voltage Drift
Input Bias Current
0.1 1 µV/°C
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-1 0.08
-5
1
5
nA
nA
TCIB Input Bias Current Temperature
Coefficient
-5 1 5 pA/°C
IOS Input Offset Current
-1.5 0.08 1.5
-3 3
nA
nA
TCIOS
Input Offset Current Temperature
Coefficient
-3 0.42 3 pA/°C
VCM
CMRR
Input Voltage Range
Common-Mode Rejection Ratio
Guaranteed by CMRR test
VCM = -13V to +13V
-13
120 145
120
13
V
dB
dB
PSRR
Power Supply Rejection Ratio
VS = ±2.25V to ±20V
120 145
120
dB
dB
AVOL
VOH
Open-Loop Gain
Output Voltage High
VO = -13V to +13V, RL = 10kΩ to ground
RL = 10kΩ to ground
3,000
13.5
13.2
14,000
13.7
V/mV
V
V
RL = 2kΩ to ground
13.3
13.0
13.55
V
V
VOL Output Voltage Low
RL = 10kΩ to ground
-13.7
-13.5
-13.2
V
V
RL = 2kΩ to ground
-13.55
-13.3
-13.0
V
V
4 July 2, 2012
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ISL70417SEH
Electrical Specifications VS ± 15V, VCM = 0, VO = 0V, TA = +25°C, unless otherwise noted. Boldface limits apply over the operating
temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50 - 300krad(Si)/s; and over a total
ionizing dose of 50krad(Si) with exposure a low dose rate of <10mrad(Si)/s. (Continued)
PARAMETER
DESCRIPTION
CONDITIONS
MIN MAX
(Note 5) TYP (Note 5) UNIT
IS Supply Current/Amplifier
0.44
0.53
0.68
mA
mA
ISC Short-Circuit Current
VSUPPLY
Supply Voltage Range
AC SPECIFICATIONS
Guaranteed by PSRR
± 2.25
43
± 20
mA
V
GBWP
enVp-p
en
en
en
en
in
Gain Bandwidth Product
Voltage Noise VP-P
Voltage Noise Density
Voltage Noise Density
Voltage Noise Density
Voltage Noise Density
Current Noise Density
AV = 1k, RL = 2kΩ
0.1Hz to 10Hz
f = 10Hz
f = 100Hz
f = 1kHz
f = 10kHz
f = 1kHz
1.5
0.25
10
8.2
8
8
0.1
MHz
µVP-P
nV/Hz
nV/Hz
nV/Hz
nV/Hz
pA/Hz
THD + N
Total Harmonic Distortion
TRANSIENT RESPONSE
1kHz, G = 1, VO = 3.5VRMS, RL = 2kΩ
1kHz, G = 1, VO = 3.5VRMS, RL = 10kΩ
0.0009
0.0005
%
%
SR Slew Rate, VOUT 20% to 80%
AV = 11, RL = 2kΩ, VO = 4VP-P
0.3 0.5
0.2
V/µs
V/µs
tr, tf,
Small Signal
Rise Time
10% to 90% of VOUT
AV = 1, VOUT = 50mVP-P,
RL = 10kΩ to VCMwww.DataSheet.net/
130 450
625
ns
ns
Fall Time
90% to 10% of VOUT
AV = 1, VOUT = 50mVP-P, RL = 10kΩ to VCM
130 600
700
ns
ns
ts Settling Time to 0.1%
10V Step; 10% to VOUT
AV = -1, VOUT = 10VP-P, RL = 5kΩ to VCM
Settling Time to 0.01%
10V Step; 10% to VOUT
AV = -1, VOUT = 10VP-P, RL = 5kΩ to VCM
Settling Time to 0.1%
4V Step; 10% to VOUT
AV = -1, VOUT = 4VP-P, RL = 5kΩ to VCM
Settling Time to 0.01%
4V Step; 10% to VOUT
AV = -1, VOUT = 4VP-P, RL = 5kΩ to VCM
tOL Output Positive Overload Recovery Time AV = -100, VIN = 0.2VP-P, RL = 2kΩ to VCM
Output Negative Overload Recovery Time AV = -100, VIN = 0.2VP-P, RL = 2kΩ to VCM
OS+ Positive Overshoot
AV = 1, VOUT = 10VP-P, Rf = 0Ω
RL = 2kΩ to VCM
21
24
13
18
5.6
10.6
15
33
µs
µs
µs
µs
µs
µs
%
%
OS- Negative Overshoot
AV = 1, VOUT = 10VP-P, Rf = 0Ω
RL = 2kΩ to VCM
15
33
%
%
5 July 2, 2012
FN7962.0
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