PS21962-ST.pdf 데이터시트 (총 8 페이지) - 파일 다운로드 PS21962-ST 데이타시트 다운로드

No Preview Available !

PS21962-ST
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21962-ST
TRANSFER-MOLD TYPE
INSULATED TYPE
INTEGRATED POWER FUNCTIONS
600V/5A low-loss 5th generation IGBT inverter bridge for
three phase DC-to-AC power conversion.
Open emitter type.
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
• For upper-leg IGBTS : Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection.
• For lower-leg IGBTS : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC), Over temperature protection (OT).
• Fault signaling : Corresponding to an SC fault (Lower-leg IGBT), a UV fault (Lower-side supply) or an OT fault (LVIC temperature).
• Input interface : 3V, 5V line (High Active).
• UL Approved : Yellow Card No. E80276
APPLICATION
AC100V~200V inverter drive for small power motor control.
Fig. 1 PACKAGE OUTLINES
0.28
1.778 ±0.2
17
38 ±0.5
20×1.778(=35.56 )
35 ±0.3
A
16-0.5
1
www.DataSheet.net/
B
2-R1.6
QR
Type name
Code Lot No.
3 MIN
18 25
0.28
2.54 ±0.2
0.5
14×2.54 (=35.56)
8-0.6
0.5 0.5
0.5
4-C1.2
(2.656)
Dimensions in mm
3.5
1.5 ±0.05
0.8
HEAT SINK SIDE
2.5 MIN
TERMINAL CODE
1. (VNC)
2. VUFB
3. VVFB
4. VWFB
5. UP
6. VP
7. WP
8. VP1
9. VNC *
10. UN
11. VN
12. WN
13. VN1
14. FO
15. CIN
16. VNC *
17. NC
18. NW
19. NV
20. NU
21. W
22. V
23. U
24. P
25. NC
1.5min
HEAT SINK SIDE
(1.2)
(2.756)
DETAIL A
DETAIL B
*) Two VNC terminals (9 & 16 pin) are connected inside DIP-IPM, please connect either one to the 15V power supply GND outside and
leave another one open.
Mar. 2007
Datasheet pdf - http://www.DataSheet4U.co.kr/

No Preview Available !

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21962-ST
TRANSFER-MOLD TYPE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
Condition
Ratings
Unit
VCC
VCC(surge)
VCES
±IC
±ICP
PC
Tj
Supply voltage
Supply voltage (surge)
Collector-emitter voltage
Each IGBT collector current
Each IGBT collector current (peak)
Collector dissipation
Junction temperature
Applied between P-NU, NV, NW
Applied between P-NU, NV, NW
TC = 25°C
TC = 25°C, less than 1ms
TC = 25°C, per 1 chip
(Note 1)
450
500
600
5
10
21.3
–20~+125
V
V
V
A
A
W
°C
Note 1 : The maximum junction temperature rating of the power chips integrated within the DIP-IPM is 150°C (@ TC 100°C). However, to
ensure safe operation of the DIP-IPM, the average junction temperature should be limited to Tj(ave) 125°C (@ TC 100°C).
CONTROL (PROTECTION) PART
Symbol
VD
VDB
Parameter
Control supply voltage
Control supply voltage
VIN Input voltage
VFO Fault output supply voltage
IFO Fault output current
VSC Current sensing input voltage
Condition
Applied between VP1-VNC, VN1-VNC
Applied between VUFB-U, VVFB-V, VWFB-W
Applied between UP, VP, WP, UN, VN,
WN-VNC
Applied between FO-VNC
Sink current at FO terminal
Applied between CIN-VNC
Ratings
20
20
–0.5~VD+0.5
–0.5~VD+0.5
1
–0.5~VD+0.5
Unit
V
V
V
V
mA
V
TOTAL SYSTEM
Symbol
Parameter
VCC(PROT)
Self protection supply voltage limit
(short circuit protection capability)
TC Module case operation temperature
Tstg Storage temperature
Viso Isolation voltage
Condition
V = 13.5~16.5V, Inverter partD
www.DataSheet.net/
Tj = 125°C, non-repetitive, less than 2µs
(Note 2)
60Hz, Sinusoidal, 1 minute,
Between pins and heat-sink plate
Ratings
400
–20~+100
–40~+125
1500
Unit
V
°C
°C
Vrms
Note 2: TC measurement point
IGBT chip position
FWD chip position
Control terminals
11.6mm
3mm
Power terminals
DIP-IPM
TC point
Heat sink side
Mar. 2007
2
Datasheet pdf - http://www.DataSheet4U.co.kr/

No Preview Available !

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21962-ST
TRANSFER-MOLD TYPE
INSULATED TYPE
THERMAL RESISTANCE
Symbol
Parameter
Condition
Limits
Min. Typ. Max. Unit
Rth(j-c)Q
Rth(j-c)F
Junction to case thermal
Inverter IGBT part (per 1/6 module)
resistance
(Note 3) Inverter FWD part (per 1/6 module)
— — 4.7 °C/W
— — 5.4 °C/W
Note 3 : Grease with good thermal conductivity should be applied evenly with about +100µm~+200µm on the contacting surface of DIP-IPM
and heat-sink.
The contacting thermal resistance between DIP-IPM case and heat sink (Rth(c-f)) is determined by the thickness and the thermal
conductivity of the applied grease. For reference, Rth(c-f) (per 1/6 module) is about 0.3°C/W when the grease thickness is 20µm and
the thermal conductivity is 1.0W/m·k.
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
VCE(sat)
VEC
ton
trr
tc(on)
toff
tc(off)
ICES
Collector-emitter saturation
voltage
FWD forward voltage
Switching times
Collector-emitter cut-off
current
Condition
VD = VDB = 15V
IC = 5A, Tj = 25°C
VIN = 5V
IC = 5A, Tj = 125°C
Tj = 25°C, –IC = 5A, VIN = 0V
VCC = 300V, VD = VDB = 15V
IC = 5A, Tj = 125°C, VIN = 0 5V
Inductive load (upper-lower arm)
VCE = VCES
Tj = 25°C
Tj = 125°C
Limits
Unit
Min. Typ. Max.
1.70 2.20
1.80 2.30 V
— 1.70 2.20 V
0.50 1.00 1.60 µs
0.30 — µs
0.30
0.50
µs
1.40
2.00
µs
0.50
0.80
µs
——
1
mA
— — 10
CONTROL (PROTECTION) PART
www.DataSheet.net/
Symbol
Parameter
Condition
ID
VFOH
VFOL
VSC(ref)
IIN
OTt
OTrh
UVDBt
UVDBr
UVDt
UVDr
tFO
Vth(on)
Vth(off)
Vth(hys)
Circuit current
Fault output voltage
Short circuit trip level
Input current
Over temperature protection
(Note 5)
Control supply under-voltage
protection
Fault output pulse width
ON threshold voltage
OFF threshold voltage
ON/OFF threshold hysteresis
voltage
VD = VDB = 15V
VIN = 5V
Total of VP1-VNC, VN1-VNC
VUFB-U, VVFB-V, VWFB-W
VD = VDB = 15V
VIN = 0V
Total of VP1-VNC, VN1-VNC
VUFB-U, VVFB-V, VWFB-W
VSC = 0V, FO terminal pull-up to 5V by 10k
VSC = 1V, IFO = 1mA
Tj = 25°C, VD = 15V
(Note 4)
VIN = 5V
VD = 15V,
At temperature of LVIC
Trip level
Trip/reset hysteresis
Trip level
Tj 125°C
Reset level
Trip level
Reset level
(Note 6)
Applied between UP, VP, WP, UN, VN, WN-VNC
Min.
4.9
0.43
0.70
100
10.0
10.5
10.3
10.8
20
0.8
0.35
Limits
Typ.
0.48
1.00
120
10
2.1
1.3
0.65
Max.
2.80
0.55
2.80
0.55
0.95
0.53
1.50
140
12.0
12.5
12.5
13.0
2.6
Unit
mA
V
V
V
mA
°C
V
V
V
V
µs
V
V
V
Note 4 : Short circuit protection is functioning only for the lower-arms. Please select the external shunt resistance such that the SC trip-level is
less than 1.7 times of the current rating.
5 : Over temperature protection (OT) outputs fault signal, when the LVIC temperature exceeds OT trip temperature level (OTt). In that case
if the heat sink comes off DIP-IPM or fixed loosely, don’t reuse that DIP-IPM. (There is a possibility that junction temperature of power
chips exceeded maximum Tj (150°C)).
6 : Fault signal is asserted only corresponding to a SC, a UV or an OT failure at lower side, and the FO pulse width is different for each fail-
ure modes. For SC failure, FO output is with a fixed width of 20µsec(min), but for UV or OT failure, FO output continuously during the
whole UV or OT period, however, the minimum FO pulse width is 20µsec(min) for very short UV or OT period less than 20µsec.
Mar. 2007
3
Datasheet pdf - http://www.DataSheet4U.co.kr/

No Preview Available !

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21962-ST
TRANSFER-MOLD TYPE
INSULATED TYPE
MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Condition
Mounting torque
Mounting screw : M3
(Note 7)
Weight
Heat-sink flatness
Note 7 : Plain washers (ISO 7089~7094) are recommended.
Recommended : 0.69 N·m
(Note 8)
Min.
0.59
–50
Limits
Typ.
10
Max.
0.78
100
Unit
N·m
g
µm
Note 8: Flatness measurement position
Measurement position
+ – 4.6mm
Heat sink side
+
DIP-IPM
Heat sink side
RECOMMENDED OPERATION CONDITIONS
www.DataSheet.net/
Symbol
Parameter
Condition
Limits
Min. Typ.
VCC Supply voltage
Applied between P-NU, NV, NW
0 300
VD Control supply voltage
Applied between VP1-VNC, VN1-VNC
13.5 15.0
VDB Control supply voltage
VD, VDB Control supply variation
tdead
Arm shoot-through blocking time
fPWM
PWM input frequency
IO Allowable r.m.s. current
Applied between VUFB-U, VVFB-V, VWFB-W
For each input signal, TC 100°C
TC 100°C, Tj 125°C
VCC = 300V, VD = VDB = 15V,
P.F = 0.8, sinusoidal PWM,
Tj 125°C, TC 100°C
fPWM = 5kHz
(Note 9) fPWM = 15kHz
13.0
–1
1.5
15.0
PWIN(on) Allowable minimum input
PWIN(off) pulse width
VNC VNC variation
(Note 10)
Between VNC-NU, NV, NW (including surge)
0.5
0.5
–5.0
Note 9 : The allowable r.m.s. current value depends on the actual application conditions.
10 : IPM might not make response if the input signal pulse width is less than the recommended minimum value.
Max.
400
16.5
18.5
1
20
2.5
1.5
5.0
Unit
V
V
V
V/µs
µs
kHz
Arms
µs
V
Mar. 2007
4
Datasheet pdf - http://www.DataSheet4U.co.kr/

No Preview Available !

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21962-ST
TRANSFER-MOLD TYPE
INSULATED TYPE
Fig. 2 THE DIP-IPM INTERNAL CIRCUIT
VUFB
VP1
UP
VNC
VVFB
VP
HVIC
VCC
VUB
UP UOUT
COM
VUS
VVB
VP
VOUT
VVS
VWFB
WP
VN1
UN
VN
WN
Fo
VNC
VWB
WP
WOUT
VWS
LVIC
UOUT
VCC
UN
VN
WN
Fo
GND
VOUT
WOUT
CIN
VNO
IGBT1
Di1
DIP-IPM
P
U
IGBT2
Di2
V
IGBT3
Di3
IGBT4
www.DataSheet.net/
Di4
IGBT5
Di5
IGBT6
Di6
W
NU
NV
NW
CIN
Mar. 2007
5
Datasheet pdf - http://www.DataSheet4U.co.kr/