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PS21963-ET
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21963-ET/-AET/-CET/-ETW
TRANSFER-MOLD TYPE
INSULATED TYPE
INTEGRATED POWER FUNCTIONS
600V/8A low-loss CSTBTTM inverter bridge for three
phase DC-to-AC power conversion
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
• For upper-leg IGBTS : Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection.
• For lower-leg IGBTS : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC), Over temperature protection (OT).
• Fault signaling : Corresponding to an SC fault (Lower-leg IGBT), a UV fault (Lower-side supply) or an OT fault (LVIC temperature).
• Input interface : 3V, 5V line (High Active).
• UL Approved : Yellow Card No. E80276
APPLICATION
AC100V~200V three-phase inverter drive for small power motor control.
Fig. 1 PACKAGE OUTLINES (PS21963-ET)
0.28
1.778 ±0.2
38 ±0.5
20×1.778(=35.56)
35 ±0.3
A
16-0.5
17 1
www.DataSheet.net/
B
2-R1.6
QR Type name
Code Lot No.
3 MIN
18
0.28
2.54 ±0.2
0.5
14×2.54 (=35.56)
25
8-0.6
4-C1.2
0.5 0.5
0.5
2.5 MIN
(2.656)
3.5
1.5 ±0.05
0.8
HEAT SINK SIDE
Dimensions in mm
TERMINAL CODE
1. NC
2. VUFB
3. VVFB
4. VWFB
5. UP
6. VP
7. WP
8. VP1
9. VNC *
10. UN
11. VN
12. WN
13. VN1
14. FO
15. CIN
16. VNC *
17. NC
18. NC
19. NC
20. N
21. W
22. V
23. U
24. P
25. NC
1.5 MIN
HEAT SINK SIDE
(2.756)
(1.2)
DETAIL A
DETAIL B
*) Two VNC terminals (9 & 16 pin) are connected inside DIPIPM, please connect either one to the 15V power supply GND outside and
leave another one open.
Mar. 2009
Datasheet pdf - http://www.DataSheet4U.co.kr/

No Preview Available !

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21963-ET/-AET/-CET/-ETW
TRANSFER-MOLD TYPE
INSULATED TYPE
Fig. 2 LONG TERMINAL TYPE PACKAGE OUTLINES (PS21963-AET)
38 ±0.5
A
B
20×1.778(=35.56)
0.28
35 ±0.3
1.778 ±0.2
16-0.5
17 1
3.5
1.5 ±0.05
2-R1.6
QR Type name
Code Lot No.
3 MIN
18
0.28
2.54 ±0.2
0.5
14×2.54 (=35.56)
25
8-0.6
4-C1.2
0.5 0.5
0.5
2.5 MIN
(2.656)
0.8
HEAT SINK SIDE
Dimensions in mm
TERMINAL CODE
1. NC
2. VUFB
3. VVFB
4. VWFB
5. UP
6. VP
7. WP
8. VP1
9. VNC *
10. UN
11. VN
12. WN
13. VN1
14. FO
15. CIN
16. VNC *
17. NC
18. NC
19. NC
20. N
21. W
22. V
23. U
24. P
25. NC
1.5 MIN
(1.2)
(2.756)
HEAT SINK SIDE
DETAIL A
DETAIL B
*) Two VNC terminals (9 & 16 pin) are connected inside DIPIPM, please connect either one to the 15V power supply GND outside and
leave another one open.
www.DataSheet.net/
Fig. 3 ZIGZAG TERMINAL TYPE PACKAGE OUTLINES (PS21963-CET)
38 ±0.5
A
B
20×1.778(=35.56)
0.28
1.778 ±0.2
35 ±0.3
16-0.5
3.5
1.5 ±0.05
17 1
2-R1.6
18
0.28
2.54 ±0.2
QR
Code
3 MIN
Type name
Lot No.
14×2.54 (=35.56)
0.5 0.5
25
8-0.6
4-C1.2
0.5
(2.656)
0.8
HEAT SINK SIDE
Dimensions in mm
TERMINAL CODE
1. NC
2. VUFB
3. VVFB
4. VWFB
5. UP
6. VP
7. WP
8. VP1
9. VNC *
10. UN
11. VN
12. WN
13. VN1
14. FO
15. CIN
16. VNC *
17. NC
18. NC
19. NC
20. N
21. W
22. V
23. U
24. P
25. NC
1.5 MIN
(1.2)
(2.756)
HEAT SINK SIDE
DETAIL A
DETAIL B
*) Two VNC terminals (9 & 16 pin) are connected inside DIPIPM, please connect either one to the 15V power supply GND outside and
leave another one open.
Mar. 2009
2
Datasheet pdf - http://www.DataSheet4U.co.kr/

No Preview Available !

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21963-ET/-AET/-CET/-ETW
TRANSFER-MOLD TYPE
INSULATED TYPE
Fig. 4 BOTH SIDES ZIGZAG TERMINAL TYPE PACKAGE OUTLINES (PS21963-ETW)
0.28
1.778 ±0.25
38 ±0.5
20×1.778(=35.56)
35 ±0.3
A
16-0.5
B
3.5
1.5 ±0.05
17 1
2-R1.6
QR Type name
Code Lot No.
3 MIN
18
0.28
2.54 ±0.25
14×2.54 (=35.56)
0.5 0.5
25
7-0.6
4-C1.2
2.5 MIN
0.5
(2.656)
0.8
HEAT SINK SIDE
Dimensions in mm
TERMINAL CODE
1. NC
2. VUFB
3. VVFB
4. VWFB
5. UP
6. VP
7. WP
8. VP1
9. VNC *
10. UN
11. VN
12. WN
13. VN1
14. FO
15. CIN
16. VNC *
17. NC
18. NC
19. NC
20. N
21. W
22. V
23. U
24. P
25. NC
1.5 MIN
(1.2)
(2.756)
HEAT SINK SIDE
DETAIL A
DETAIL B
*) Two VNC terminals (9 & 16 pin) are connected inside DIPIPM, please connect either one to the 15V power supply GND outside and
leave another one open.
QR Code is registered trademark of DENSO WAVE INCORPORATED in Japan and other countries.
Fig. 5 INTERNAL FUNCTIONS BLOCK DIAGRAM (TYPICAL APPLICATION EXAMPLE)
C1 : Electrolytic type with good temperature and frequency
characteristics
(Note : The capacitance value depends on the PWM control
scheme used in the applied system).
C2 : 0.22~2µF R-category ceramic capacitor for noise filtering.
Inrush current
limiter circuit
P
AC line input
(Note 4)
www.DataSheet.net/
High-side input (PWM)
(3V, 5V line) (Note 1, 2)
Input signal Input signal Input signal
conditioning conditioning conditioning
Level shifter
Protection
circuit (UV)
Level shifter
Level shifter
Drive circuit Drive circuit Drive circuit
C2
C1
(Note 6)
(Note 5)
H-side IGBTS
DIPIPM
U
V
W
(Note 7)
M
AC line output
ZC
Z : Surge absorber
C : AC filter (Ceramic capacitor 2.2~6.5nF)
(Note : Additionally, an appropriate line-to line
surge absorber circuit may become necessary
depending on the application environment).
N1
VNC
CIN
N
Drive circuit
L-side IGBTS
Input signal conditioning Fo logic
Protection
circuit
Control supply
Under-Voltage
protection
Note1:
2:
3:
4:
5:
6:
7:
Low-side input (PWM) FO
(3V, 5V line)(Note 1, 2) Fault output (5V line)
(Note 3)
(Note 6)
VNC
VD
(15V line)
Input logic is high-active. There is a 3.3k(min) pull-down resistor built-in each input circuit. When using an external CR filter, please make it satisfy the
input threshold voltage.
By virtue of integrating an application specific type HVIC inside the module, direct coupling to MCU terminals without any opto-coupler or transformer
isolation is possible. (see also Fig. 11)
This output is open drain type. The signal line should be pulled up to the positive side of the 5V power supply with approximately 10kresistor.
(see also Fig. 11)
The wiring between the power DC link capacitor and the P, N1 terminals should be as short as possible to protect the DIPIPM against catastrophic high
surge voltages. For extra precaution, a small film type snubber capacitor (0.1~0.22µF, high voltage type) is recommended to be mounted close to
these P & N1 DC power input pins.
High voltage (600V or more) and fast recovery type (less than 100ns) diodes should be used in the bootstrap circuit.
It is recommended to insert a Zener diode (24V/1W) between each pair of control supply terminals to prevent surge destruction.
Bootstrap negative electrodes should be connected to U, V, W terminals directly and separated from the main output wires.
Mar. 2009
3
Datasheet pdf - http://www.DataSheet4U.co.kr/