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< Dual-In-Line Package Intelligent Power Module >
PS219B2-S/-AS/-CS
PS219B2-ST/-AST/-CST
TRANSFER MOLDING TYPE
INSULATED TYPE
OUTLINE
MAIN FUNCTION AND RATINGS
3 phase DC/AC inverter
600V / 5A (CSTBT)
N-side IGBT open emitter
Built-in bootstrap diodes with current limiting resistor
APPLICATION
AC 100~240Vrms(DC voltage:400V or below) class
low power motor control
TYPE NAME
PS219B2-S/-AS/-CS
PS219B2-ST/-AST/-CST
With temperature output function
With OT protection function
Long terminal type(-AS/-AST)
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
For P-side
: Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection
For N-side : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC),
Over temperature protection (OT, -ST/-AST/-CST only)
Fault signaling : Corresponding to SC fault (N-side IGBT), UV fault (N-side supply)
Temperature output : Outputting LVIC temperature by analog signal (-S/-AS/-CS only)
Input interface : 3, 5V line, Schmitt trigger receiver circuit (High Active)
UL Recognized : UL1557 File E323585
www.DataSheet.net/
INTERNAL CIRCUIT
VUFB(2)
IGBT1
Di1
P(24)
VVFB(3)
VWFB(4)
UP(5)
VP(6)
WP(7)
VP1(8)
VNC(9)
HVIC
IGBT2
Di2
IGBT3
Di3
IGBT4
Di4
U(23)
V(22)
W(21)
UN(10)
VN(11)
WN(12)
VN1(13)
FO(14)
CIN(15)
VNC(16)
·Built-in temperature output type: VOT
(-S/-AS/-CS)
·Built-in OT type: NC (No Connection)
(-ST/-AST/-CST)
VOT(17)
LVIC
IGBT5
Di5
IGBT6
Di6
NU(20)
NV(19)
NW(18)
Publication Date : November 2011
1
Datasheet pdf - http://www.DataSheet4U.co.kr/

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< Dual-In-Line Package Intelligent Power Module >
PS219B2-S/-AS/-CS/-ST/-AST/-CST
TRANSFER MOLDING TYPE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
Condition
Ratings
Unit
VCC Supply voltage
Applied between P-NU,NV,NW
450 V
VCC(surge) Supply voltage (surge)
Applied between P-NU,NV,NW
500 V
VCES
Collector-emitter voltage
600 V
±IC Each IGBT collector current
TC= 25°C
5A
±ICP Each IGBT collector current (peak) TC= 25°C, less than 1ms
10 A
PC Collector dissipation
TC= 25°C, per 1 chip
21.3 W
Tj Junction temperature
(Note 1)
-20~+150
°C
Note1: The maximum junction temperature rating of built-in power chips is 150°C(@Tc100°C).However, to ensure safe operation of DIPIPM, the average
junction temperature should be limited to Tj(Ave)125°C (@Tc100°C).
CONTROL (PROTECTION) PART
Symbol
Parameter
VD Control supply voltage
VDB Control supply voltage
VIN Input voltage
VFO Fault output supply voltage
IFO Fault output current
VSC Current sensing input voltage
Condition
Applied between VP1-VPC, VN1-VNC
Applied between VUFB-VUFS, VVFB-VVFS, VWFB-VWFS
Applied between UP, VP, WP-VPC, UN, VN, WN-VNC
Applied between FO-VNC
Sink current at FO terminal
Applied between CIN-VNC
Ratings
20
20
-0.5~VD+0.5
-0.5~VD+0.5
1
-0.5~VD+0.5
Unit
V
V
V
V
mA
V
TOTAL SYSTEM
Symbol
Parameter
VCC(PROT)
Self protection supply voltage limit
(Short circuit protection capability)
TC Module case operation temperature
Tstg Storage temperature
Viso Isolation voltage
Fig. 1: TC MEASUREMENT POINT
Condition
VD = 13.5~16.5V, Inverter Part
Tj = 125°C, non-repetitive, less than 2μs
Measurement point of Tc is provided in Fig.1
60Hz, Sinusoidal, AC 1minute, between connected all
pins and heat-sink platewww.DataSheet.net/
Ratings
400
-20~+100
-40~+125
1500
Unit
V
°C
°C
Vrms
Control terminals
DIPIPM
11.6mm
3mm
IGBT chip position
Power terminals
Tc point
Heat sink side
THERMAL RESISTANCE
Symbol
Parameter
Condition
Min.
Limits
Typ.
Max.
Unit
Rth(j-c)Q
Junction to case thermal
Inverter IGBT part (per 1/6 module)
- - 4.7 K/W
Rth(j-c)F
resistance
(Note 2)
Inverter FWDi part (per 1/6 module)
- - 5.4 K/W
Note 2: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100μm~+200μm on the contacting surface of
DIPIPM and heat-sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the thermal
conductivity of the applied grease. For reference, Rth(c-f) is about 0.3K/W (per 1/6 module, grease thickness: 20μm, thermal conductivity: 1.0W/m•k).
Publication Date : November 2011
2
Datasheet pdf - http://www.DataSheet4U.co.kr/

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< Dual-In-Line Package Intelligent Power Module >
PS219B2-S/-AS/-CS/-ST/-AST/-CST
TRANSFER MOLDING TYPE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
Condition
Limits
Unit
Min. Typ. Max.
VCE(sat)
VEC
ton
tC(on)
toff
tC(off)
trr
ICES
Collector-emitter saturation
voltage
FWDi forward voltage
Switching times
VD=VDB = 15V, VIN= 5V, IC= 5A
VIN= 0V, -IC= 5A
VCC= 300V, VD= VDB= 15V
IC= 5A, Tj= 125°C, VIN= 05V
Inductive Load (upper-lower arm)
Collector-emitter cut-off
current
VCE=VCES
Tj= 25°C
Tj= 125°C
Tj= 25°C
Tj= 125°C
-
-
-
0.75
-
-
-
-
-
-
1.50
1.60
1.70
1.35
0.35
1.40
0.30
0.30
-
-
2.00
2.10
V
2.20 V
1.95 μs
0.55 μs
2.00 μs
0.60 μs
- μs
1
10
mA
CONTROL (PROTECTION) PART
Symbol
Parameter
Condition
Limits
Unit
Min. Typ. Max.
ID
IDB
VSC(ref)
UVDBt
UVDBr
UVDt
UVDr
VOT
Circuit current
Short circuit trip level
P-side Control supply
under-voltage protection(UV)
N-side Control supply
under-voltage protection(UV)
Temperature Output
(-S/-AS/-CS only)
Total of VP1-VNC, VN1-VNC
Each part of VUFB-U,
VVFB-V, VWFB-W
VD = 15V
Tj 125°C
Pull down R=5k(Note 4)
VD=15V, VIN=0V
VD=15V, VIN=5V
VD=VDB=15V, VIN=0V
VD=VDB=15V, VIN=5V
(Note 3)
Trip level
Reset level
Trip level
Reset level
LVIC Temperature=90C
LVIC Temperature=25C
-
-
-
-
0.43
7.0
7.0
10.3
10.8
2.63
0.88
-
-
-
-
0.48
10.0
10.0
-
-
2.77
1.13
2.80
2.80
0.10
mA
0.10
0.53 V
12.0 V
12.0 V
12.5 V
13.0 V
2.91 V
1.39 V
OTt
OTrh
VFOH
VFOL
tFO
IIN
Vth(on)
Vth(off)
Vth(hys)
Overt temperature protection
(OT, -ST/-AST/-CST only) (Note5)
Fault output voltage
Fault output pulse width
Input current
ON threshold voltage
OFF threshold voltage
ON/OFF threshold
hysteresis voltage
VD = 15V
Trip level
Detect LVIC temperature www.DataSheet.net/ Hysteresis of trip-reset
VSC = 0V, FO terminal pulled up to 5V by 10k
VSC = 1V, IFO = 1mA
(Note 6)
VIN = 5V
Applied between UP, VP, WP, UN, VN, WN-VNC
100
-
4.9
-
20
0.70
-
0.80
0.35
120
10
-
-
-
1.00
2.10
1.30
0.65
140
-
-
0.95
-
1.50
2.60
-
-
°C
°C
V
V
μs
mA
V
VF
Bootstrap Di forward voltage IF=10mA including voltage drop by limiting resistor
(Note 7) 1.1
1.7
2.3
V
R Built-in limiting resistance Included in bootstrap Di
80 100 120
Note 3 : SC protection works only for N-side IGBT. Please select the external shunt resistance such that the SC trip-level is less than 1.7 times of the current rating.
Note 4 : DIPIPM don't shutdown IGBTs and output fault signal automatically when temperature rises excessively. When temperature exceeds the protective level that
user defined, controller (MCU) should stop the DIPIPM. Temperature of LVIC vs. VOT output characteristics is described in Fig. 3.
5 : When the LVIC temperature exceeds OT trip temperature level(OTt), OT protection works and Fo outputs. In that case if the heat sink dropped off or fixed
loosely, don't reuse that DIPIPM. (There is a possibility that junction temperature of power chips exceeded maximum Tj(150C).
6 : Fault signal Fo outputs when SC, UV or OT protection works. Fo pulse width is different for each protection modes. At SC failure, Fo pulse width is a fixed
width (=minimum 20μs), but at UV or OT failure, Fo outputs continuously until recovering from UV or OT state. (But minimum Fo pulse width is 20μs.)
7 : The characteristics of bootstrap Di is described in Fig.2.
Fig. 2 Characteristics of bootstrap Di VF-IF curve (@Ta=25C) including voltage drop by limiting resistor (Right chart is enlarged chart.)
160
140
120
100
80
60
40
20
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
VF [V]
30
25
20
15
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VF [V]
Publication Date : November 2011
3
Datasheet pdf - http://www.DataSheet4U.co.kr/