2N6039.pdf 데이터시트 (총 10 페이지) - 파일 다운로드 2N6039 데이타시트 다운로드

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2N6036
2N6039
Complementary power Darlington transistors
Features
.
Good hFE linearity
High fT frequency
)Monolithic Darlington configuration with
t(sintegrated antiparallel collector-emitter diode
ducApplications
roLinear and switching industrial equipment
te PDescription
oleThe devices are manufactured in planar
stechnology with “base island” layout and
bmonolithic Darlington configuration.
1
2
3
SOT-32
Figure 1. Internal schematic diagram
Obsolete Product(s) - O R1 typ. = 15 kΩ
R2 typ. = 100 Ω
Table 1. Device summary
Order codes
Marking
2N6036
2N6036
2N6039
2N6039
Polarity
NPN
PNP
Package
SOT-32
SOT-32
Packaging
Tube
Tube
May 2009
Doc ID 5064 Rev 5
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Absolute maximum ratings
1 Absolute maximum ratings
2N6036, 2N6039
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCBO
VCEO
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
80 V
VEBO Emitter-base voltage (IC = 0)
5V
Obsolete Product(s) - Obsolete Product(s)Note:
IC
ICM
IB
PTOT
TSTG
TJ
Collector current
Collector peak current
Base current
Total dissipation at Tcase = 25°C
Storage temperature
Max. operating junction temperature
For PNP types voltage and current values are negative.
4
8
0.1
40
-65 to 150
150
A
A
A
W
°C
°C
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2N6036, 2N6039
2 Electrical characteristics
Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 3. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICEV
Collector cut-off current
(VBE = -1.5 V)
VCE = 80 V
VCE = 80 V, Tc = 125 °C
0.1 mA
-
0.5 mA
ICBO
Collector cut-off current
(IE = 0)
ct(s)ICEO
Collector cut-off current
(IB = 0)
roduIEBO
Emitter cut-off current
(IC = 0)
PVCEO(sus)(1)
Collector-emitter
sustaining voltage
VCB = 80 V
VCE = 80 V
VEB = 5 V
IC = 100 mA
80
leteVCE(sat)(1)
ObsoVBE(sat)(1)
Collector-emitter saturation IC = 2 A
voltage
IC = 4 A
Base-emitter saturation
voltage
IC = 4 A
IB = 8 mA
IB = 40 mA
IB = 40 mA
-VBE(on)
ct(s)hFE(1)
Produhfe
Base-emitter on voltage
DC current gain
Small signal current gain
IC = 2 A
VCE = 3 V
IC = 0.5 A_ _ VCE = 3 V
IC = 2 A_
VCE = 3 V
IC = 4 A_ _ VCE = 3 V
IC = 0.75 A_ VCE = 10 V
f = 1 MHz
500
750
100
25
oleteCCBO
Collector base capacitance
(IE = 0)
VCB = 10 V
for 2N6036
for 2N6039
f = 0.1 MHz
Obs 1. Pulsed duration = 300 µs, duty cycle 1.5%.
- 0.1 mA
- 0.1 mA
- 2 mA
-V
-2
V
-3
- 4V
- 2.8 V
-
- 15000
-
-
- 100 pF
200 pF
Note:
For PNP types voltage and current values are negative.
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Electrical characteristics
2N6036, 2N6039
2.1 Typical characteristic (curves)
Figure 2. DC current gain
(VCE = 3 V NPN)
Figure 3. DC current gain
(VCE = - 3 V PNP)
roduct(s)Figure 4. DC current gain
P(VCE = 5 V NPN)
Figure 5. DC current gain
(VCE = - 5 V PNP)
Product(s) - ObsoleteFigure 6. Collector-emitter saturation Figure 7. Collector-emitter saturation
Obsolete voltage (NPN)
voltage (PNP)
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2N6036, 2N6039
Figure 8. Base-emitter saturation
voltage (NPN)
Electrical characteristics
Figure 9. Base-emitter saturation
voltage (PNP)
uct(s)Figure 10. Base-emitter on voltage
d(NPN)
Figure 11. Base-emitter on voltage
(PNP)
duct(s) - Obsolete ProFigure 12. Resistive load switching time Figure 13. Resistive load switching time
Obsolete Pro(NPN, on)
(PNP, on)
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