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80RIA...PbF/81RIA...PbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 80 A
TO-209AC (TO-94)
PRODUCT SUMMARY
IT(AV)
80 A
FEATURES
• Hermetic glass-metal seal
• International standard case TO-209AC (TO-94)
• RoHS compliant
• Lead (Pb)-free
• Designed and qualified for industrial level
RoHS
COMPLIANT
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IT(RMS)
ITSM
I2t
VDRM/VRRM
tq
TJ
TC
50 Hz
60 Hz
50 Hz
60 Hz
Typical
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VALUES
80
85
125
1900
1990
18
16
400 to 1200
110
- 40 to 125
UNITS
A
°C
A
kA2s
V
µs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
80RIA
81RIA
40
80
120
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
400
800
1200
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM
AT TJ = 125 °C
mA
500
900
1300
15
Document Number: 94392
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
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80RIA...PbF/81RIA...PbF Series
Vishay High Power Products Phase Control Thyristors
(Stud Version), 80 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
Maximum peak, one-cycle
non-repetitive surge current
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
I2t
VT(TO)1
VT(TO)2
rt1
rt2
VTM
IH
IL
TEST CONDITIONS
180° conduction, half sine wave
DC at 75 °C case temperature
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
Ipk = 250 A, TJ = 25 °C, tp = 10 ms sine pulse
TJ = 25 °C, anode supply 12 V resistive load
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VALUES
80
85
125
1900
1990
1600
1675
18
16
12.7
11.7
180.5
0.99
1.13
2.29
1.84
1.60
200
400
UNITS
A
°C
A
kA2s
kA2s
V
mΩ
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
td
tq
TEST CONDITIONS
TJ = 125 °C, Vd = Rated VDRM, ITM = 2 x dI/dt snubber
0.2 µF, 15 Ω, gate pulse: 20 V, 65 Ω, tp = 6 µs, tr = 0.5 µs
Per JEDEC standard RS-397, 5.2.2.6.
Gate pulse: 10 V, 15 Ω source, tp = 6 µs, tr = 0.1 µs,
Vd = Rated VDRM, ITM = 50 Adc, TJ = 25 °C
ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/µs, VR = 50
V, dV/dt = 20 V/µs, gate bias: 0 V 25 Ω, tp = 500 µs
VALUES
300
1
110
UNITS
A/µs
µs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
IRRM,
IDRM
TEST CONDITIONS
TJ = 125 °C exponential to 67 % rated VDRM
TJ = 125 °C rated VDRM/VRRM applied
VALUES UNITS
500 V/µs
15 mA
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94392
Revision: 11-Aug-08
Datasheet pdf - http://www.DataSheet4U.co.kr/

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80RIA...PbF/81RIA...PbF Series
Phase Control Thyristors Vishay High Power Products
(Stud Version), 80 A
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
SYMBOL
PGM
PG(AV)
IGM
+ VGM
- VGM
Maximum DC gate current required to trigger IGT
Maximum DC gate voltage required to trigger VGT
DC gate current not to trigger
DC gate voltage not to trigger
IGD
VGD
TEST CONDITIONS
TJ = TJ maximum, tp 5 ms
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp 5 ms
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
TJ = TJ maximum
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units 6 V
anode to cathode applied
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated VDRM anode to cathode
applied
VALUES
12
3
3
20
10
270
120
60
3.5
2.5
1.5
6
0.25
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating junction
temperature range
TJ
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Maximum storage temperature range
Maximum thermal resistance,
junction to case
TStg
RthJC
DC operation
Maximum thermal resistance,
case to heatsink
RthCS Mounting surface, smooth, flat and greased
Mounting torque, ± 10 %
Approximate weight
Case style
Non-lubricated threads
Lubricated threads
See dimensions - link at the end of datasheet
VALUES UNITS
- 40 to 125
- 40 to 150
°C
0.30
K/W
0.1
15.5
(137)
14
(120)
N·m
(lbf · in)
130 g
TO-209AC (TO-94)
ΔRthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
180°
0.042
0.030
120°
0.050
0.052
90° 0.064
60° 0.095
0.070
0.100
TJ = TJ maximum
30° 0.164
0.165
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
UNITS
K/W
Document Number: 94392
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
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80RIA...PbF/81RIA...PbF Series
Vishay High Power Products Phase Control Thyristors
(Stud Version), 80 A
130
80RIA Series
RthJC (DC) = 0.30 K/W
120
110
Conduc tion Angle
100 30° 60°
90°
120°
90 180°
80
0 10 20 30 40 50 60 70 80 90
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
130
80RIA Series
RthJC (DC) = 0.30 K/W
120
110
100
Conduction Period
90
30°
60°
80 90°
120°
180°
DC
70
0 20 40 60 80 100 120 140
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
120
110
100
90
80
70
60
50
40
30
20
10
0
0
180°
120°
90°
60°
30°
RMSLimit
1 K/ W
Conduction Angle
1.4 K/ W
2 K/ W
3 K/ Wwww.DataSheet.net/
80RIA Series
TJ = 125°C
5 K/ W
10 20 30 40 50 60 70 800 25 50 75 100 125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
180
DC
160 180°
140
120°
90°
120 60°
30°
100
80
RMSLimit
60
40
20
Conduc tion Period
80RIA Series
TJ = 125°C
R
0.6
thSA
K/ W
=
0.4
K/
W
-
Delta
R
1 K/ W
1.4 K/ W
2 K/ W
3 K/ W
5 K/ W
0
0 20 40 60 80 100 120 1040
25
50
75
100 125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94392
Revision: 11-Aug-08
Datasheet pdf - http://www.DataSheet4U.co.kr/

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80RIA...PbF/81RIA...PbF Series
Phase Control Thyristors Vishay High Power Products
(Stud Version), 80 A
1800
1600
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
1400
1200
1000
80RIA Series
800
1
10 100
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
2000 Maximum Non Repetitive Surge Current
1900
Versus Pulse Train Duration. Control
1800 Of Conduction May Not Be Maintained.
1700
Initial TJ = 125°C
1600
1500
No Voltage Reapplied
Rated VRRM Reapplied
1400
1300
1200
1100
1000
900 80RIA Series
800
700
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
10000
1000
100
10
TJ = 25°C
TJ = 125°C
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80RIA Series
1
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
InstantaneousOn-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
1
Steady State Value
R thJC = 0.30 K/W
(DC Operation)
0.1
0.01
0.001
0.0001
80RIA Series
0.001
0.01
0.1
1
Sq uare Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
10
Document Number: 94392
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
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Datasheet pdf - http://www.DataSheet4U.co.kr/