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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
Sensitive Gate Triggering Uniquely Compatible for Direct Coupling to TTL, HTL,
CMOS and Operational Amplifier Integrated Circuit Logic Functions
Gate Triggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B
Blocking Voltages to 600 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Order this document
by 2N6071/D
2N6071A,B*
2N6073A,B*
2N6075A,B*
*Motorola preferred devices
TRIACs
4 AMPERES RMS
200 thru 600 VOLTS
MT1
MT2 G
MT2
G
MT2 MT1
CASE 77-08
(TO-225AA)
STYLE 5
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
*Peak Repetitive Off-State Voltage(1)
(Gate Open, TJ = 25 to 110°C)
2N6071A,B
2N6073A,B
2N6075A,B
Symbol
VDRM
Value
200
400
600
Unit
Volts
*On-State Current RMS (TC = 85°C)
*Peak Surge Current
(One Full cycle, 60 Hz, TJ = –40 to +110°C)
Circuit Fusing Considerations
(t = 8.3 ms)
IT(RMS)
ITSM
I2t
4
30
3.7
Amps
Amps
A2s
*Peak Gate Power
PGM
10 Watts
*Average Gate Power
PG(AV)
0.5
Watt
*Peak Gate Voltage
VGM 5 Volts
*Indicates JEDEC Registered Data.
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Thyristor Device Data
© Motorola, Inc. 1998
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2N6071A,B 2N6073A,B 2N6075A,B
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
*Operating Junction Temperature Range
*Storage Temperature Range
Mounting Torque (6-32 Screw)(1)
TJ –40 to +110 °C
Tstg –40 to +150
°C
— 8 in. lb.
*Indicates JEDEC Registered Data.
1. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower
case-to-sink thermal resistance. Main terminal 2 and heatsink contact pad are common.
For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C, for 10 seconds.
Consult factory for lead bending options.
THERMAL CHARACTERISTICS
Characteristic
*Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
*Indicates JEDEC Registered Data.
Symbol
RθJC
RθJA
Max
3.5
75
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
*Peak Blocking Current
(VD = Rated VDRM, gate open, TJ = 25°C)
(TJ = 110°C)
*On-State Voltage (Either Direction)
(ITM = 6 A Peak)
*Peak Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = –40°C)
MT2(+), G(+); MT2(–), G(–) All Types
MT2(+), G(–); MT2(–), G(+)
(Main Terminal Voltage = Rated VDRM, RL = 10 k ohms,
TJ = 110°C)
MT2(+), G(+); MT2(–), G(–) All Types
MT2(+), G(–); MT2(–), G(+)
*Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open, TJ = –40°C)
(Initiating Current = 1 Adc) 2N6071A,B, 2N6073A,B, 2N6075A,B
(TJ = 25°C)
2N6071A,B, 2N6073A,B, 2N6075A,B
Turn-On Time (Either Direction)
(ITM = 14 Adc, IGT = 100 mAdc)
Blocking Voltage Application Rate at Commutation
@ VDRM, TJ = 85°C, Gate Open, ITM = 5.7 A,
Commutating di/dt = 2.0 A/ms
*Indicates JEDEC Registered Data.
Symbol
IDRM
VTM
VGT
IH
ton
dv/dt(c)
Min Typ Max Unit
— — 10 µA
——
2 mA
——
2 Volts
Volts
— 1.4 2.5
— 1.4 2.5
0.2 —
0.2 —
mA
— — 30
— — 15
— 1.5 —
µs
— 5 — V/µs
2 Motorola Thyristor Device Data

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Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 ohms)
Maximum Value
*Indicates JEDEC Registered Data.
Type
2N6071A
2N6073A
2N6075A
2N6071B
2N6073B
2N6075B
2N6071A,B 2N6073A,B 2N6075A,B
IGT
@ TJ
+25°C
–40°C
+25°C
–40°C
QUADRANT
(See Definition Below)
I II III IV
mA mA mA mA
5 5 5 10
20 20 20 30
3335
15 15 15 20
SAMPLE APPLICATION:
TTL-SENSITIVE GATE 4 AMPERE TRIAC
TRIGGERS IN MODES II AND III
0V
–VEE
14
MC7400
4
7
VEE = 5.0 V
+
LOAD
510 2N6071A
115 VAC
60 Hz
QUADRANT DEFINITIONS
MT2(+)
QUADRANT II
QUADRANT I
MT2(+), G(–)
MT2(+), G(+)
G(–)
QUADRANT III
G(+)
QUADRANT IV
MT2(–), G(–)
MT2(–), G(+)
MT2(–)
Trigger devices are recommended for gating on Triacs. They provide:
1. Consistent predictable turn-on points.
2. Simplified circuitry.
3. Fast turn-on time for cooler, more efficient and reliable operation.
Motorola Thyristor Device Data
SENSITIVE GATE LOGIC REFERENCE
IC Logic
Functions
I
Firing Quadrant
II III
IV
TTL 2N6071A 2N6071A
Series
Series
HTL 2N6071A 2N6071A
Series
Series
CMOS (NAND) 2N6071B
Series
2N6071B
Series
CMOS (Buffer)
2N6071B 2N6071B
Series
Series
Operational
Amplifier
2N6071A
Series
2N6071A
Series
Zero Voltage
Switch
2N6071A 2N6071A
Series
Series
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2N6071A,B 2N6073A,B 2N6075A,B
FIGURE 1 – AVERAGE CURRENT DERATING
110
100
α = 30°
60°
90 90°
120°
180°
dc
α
80
α
70 α = CONDUCTION ANGLE
0 1.0
2.0
3.0
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
4.0
FIGURE 2 – RMS CURRENT DERATING
110
α = 30°
60°
90°
100
90 120°
180°
α
80
α
dc
α = CONDUCTION ANGLE
70
0 1.0
2.0
3.0
IT(RMS), RMS ON-STATE CURRENT (AMP)
4.0
FIGURE 3 – POWER DISSIPATION
8.0
α
α
6.0
α = CONDUCTION ANGLE
120°
90°
180°
60°
4.0
α = 30°
dc
2.0
0
0 1.0 2.0 3.0 4.0
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
FIGURE 4 – POWER DISSIPATION
8.0
α
α
6.0
α = CONDUCTION ANGLE
4.0
α = 180°
120°
dc
30°
2.0 60°
90°
0
0 1.0 2.0 3.0 4.0
IT(RMS), RMS ON-STATE CURRENT (AMP)
FIGURE 5 – TYPICAL GATE-TRIGGER VOLTAGE
3.0
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
2.0
FIGURE 6 – TYPICAL GATE-TRIGGER CURRENT
3.0
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
2.0
1.0 1.0
0.7 0.7
0.5 0.5
0.3
–60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
0.3
–60 –40
–20 0 20 40 60 80 100
TJ, JUNCTION TEMPERATURE (°C)
120 140
4 Motorola Thyristor Device Data

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FIGURE 7 – MAXIMUM ON-STATE CHARACTERISTICS
40
30
20
3.0
2.0
2N6071A,B 2N6073A,B 2N6075A,B
FIGURE 8 – TYPICAL HOLDING CURRENT
GATE OPEN
APPLIES TO EITHER DIRECTION
10
7.0
5.0
TJ = 110°C
3.0
2.0
1.0
0.7
0.5
0.3
–60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ = 25°C
FIGURE 9 – MAXIMUM ALLOWABLE SURGE CURRENT
1.0 34
32
0.7
30
0.5 28
26
0.3 24
22 TJ = –40 to +110°C
f = 60 Hz
0.2 20
18
16
0.1 14
0 1.0 2.0 3.0 4.0 5.0 1.0
2.0
3.0 4.0 5.0
7.0 10
VTM, ON-STATE VOLTAGE (VOLTS)
NUMBER OF FULL CYCLES
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
0.1
0.2
0.5 1.0 2.0
FIGURE 10 – THERMAL RESPONSE
5.0 10
20 50
t, TIME (ms)
100 200
MAXIMUM
TYPICAL
500 1.0 k 2.0 k
5.0 k 10 k
Motorola Thyristor Device Data
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