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2N6071A/B Series
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
Sensitive Gate Triggering Uniquely Compatible for Direct Coupling
to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit
Logic Functions
Gate Triggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B
Blocking Voltages to 600 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermopad Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Device Marking: Device Type, e.g., 2N6071A, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
**Peak Repetitive Off-State Voltage(1)
(TJ = 40 to 110°C, Sine Wave,
50 to 60 Hz, Gate Open)
2N6071A,B
2N6073A,B
2N6075A,B
VDRM,
VRRM
200
400
600
Unit
Volts
*On-State RMS Current (TC = 85°C) IT(RMS) 4.0 Amps
Full Cycle Sine Wave 50 to 60 Hz
*Peak Non–repetitive Surge Current
(One Full cycle, 60 Hz, TJ = +110°C)
Circuit Fusing Considerations
(t = 8.3 ms)
ITSM
I2t
30 Amps
3.7 A2s
*Peak Gate Power
(Pulse Width 1.0 µs, TC = 85°C)
*Average Gate Power
(t = 8.3 ms, TC = 85°C)
*Peak Gate Voltage
(Pulse Width 1.0 µs, TC = 85°C)
*Operating Junction Temperature Range
PGM
PG(AV)
VGM
TJ
10
0.5
5.0
–40 to
+110
Watts
Watt
Volts
°C
*Storage Temperature Range
Tstg
–40 to
°C
+150
Mounting Torque (6-32 Screw)(2)
— 8.0 in. lb.
*Indicates JEDEC Registered Data.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) Torque rating applies with use of a compression washer. Mounting torque in
excess of 6 in. lb. does not appreciably lower case-to-sink thermal
resistance. Main terminal 2 and heatsink contact pad are common.
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TRIACS
4 AMPERES RMS
200 thru 600 VOLTS
MT2
MT1
G
3
21
TO–225AA
(formerly TO–126)
CASE 077
STYLE 5
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
ORDERING INFORMATION
Device
2N6071A
2N6071B
Package
TO225AA
TO225AA
Shipping
500/Box
500/Box
2N6073A
TO225AA
500/Box
2N6073B
2N6075A
2N6075B
TO225AA
TO225AA
TO225AA
500/Box
500/Box
500/Box
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 3
1
Publication Order Number:
2N6071/D

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2N6071A/B Series
THERMAL CHARACTERISTICS
Characteristic
*Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
Symbol
RθJC
RθJA
TL
Max
3.5
75
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min Typ
OFF CHARACTERISTICS
Max Unit
*Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 110°C
ON CHARACTERISTICS
"*Peak On-State Voltage(1)
(ITM = 6 A Peak)
*Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = –40°C)
All Quadrants
IDRM,
IRRM
VTM
VGT
— — 10 µA
——
2 mA
——
2 Volts
Volts
— 1.4 2.5
Gate Non–Trigger Voltage
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = 110°C)
All Quadrants
VGD
0.2 —
Volts
*Holding Current
"(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 1 Adc)
Turn-On Time
(ITM = 14 Adc, IGT = 100 mAdc)
(TJ = –40°C)
(TJ = 25°C)
IH
tgt
mA
— — 30
— — 15
— 1.5 — µs
QUADRANT
(Maximum Value)
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 ohms)
Type
2N6071A
2N6073A
2N6075A
IGT
@ TJ
+25°C
–40°C
I II III IV
mA mA mA mA
5 5 5 10
20 20 20 30
2N6071B
2N6073B
2N6075B
+25°C
–40°C
3 335
15 15 15 20
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
@ VDRM, TJ = 85°C, Gate Open, ITM = 5.7 A, Exponential Waveform,
Commutating di/dt = 2.0 A/ms
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
dv/dt(c)
— 5 — V/µs
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0V
–VEE
2N6071A/B Series
SAMPLE APPLICATION:
TTL-SENSITIVE GATE 4 AMPERE TRIAC
TRIGGERS IN MODES II AND III
14
MC7400
4
7
VEE = 5.0 V
+
LOAD
510 2N6071A
Trigger devices are recommended for gating on Triacs. They provide:
1. Consistent predictable turn-on points.
2. Simplified circuitry.
3. Fast turn-on time for cooler, more efficient and reliable operation.
115 VAC
60 Hz
Symbol
VDRM
IDRM
VRRM
IRRM
VTM
IH
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
IRRM at VRRM
on state
IH
Quadrant 3
MainTerminal 2 –
VTM
VTM
Quadrant 1
MainTerminal 2 +
IH
off state
+ Voltage
IDRM at VDRM
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2N6071A/B Series
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
IGT –
(–) IGT
GATE
MT1
REF
(–) MT2
(+) IGT
GATE
MT1
REF
(–) MT2
Quadrant I
+ IGT
Quadrant III
(–) IGT
GATE
MT1
REF
(+) IGT
GATE
MT1
REF
Quadrant IV
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in–phase signals (using standard AC lines) quadrants I and III are used.
SENSITIVE GATE LOGIC REFERENCE
IC Logic
Functions
I
Firing Quadrant
II III
IV
TTL 2N6071A 2N6071A
Series
Series
HTL 2N6071A 2N6071A
Series
Series
CMOS (NAND) 2N6071B
Series
2N6071B
Series
CMOS (Buffer)
2N6071B 2N6071B
Series
Series
Operational
Amplifier
2N6071A
Series
2N6071A
Series
Zero Voltage
Switch
2N6071A 2N6071A
Series
Series
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2N6071A/B Series
110
100
α = 30°
60°
90 90°
120°
180°
dc
a
80
α
70 α = CONDUCTION ANGLE
0 1.0
2.0
3.0
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
Figure 1. Average Current Derating
4.0
110
α = 30°
60°
90°
100
90 120°
180°
a
80
a
dc
α = CONDUCTION ANGLE
70
0 1.0
2.0
3.0
IT(RMS), RMS ON-STATE CURRENT (AMP)
Figure 2. RMS Current Derating
4.0
8.0
a
a
6.0
α = CONDUCTION ANGLE
4.0
α = 30°
60°
120°
90°
180°
dc
2.0
8.0
a
a
6.0
α = CONDUCTION ANGLE
4.0
2.0
α = 180°
120°
dc
30°
60°
90°
00
0 1.0 2.0 3.0 4.0 0
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
Figure 3. Power Dissipation
1.0 2.0 3.0
IT(RMS), RMS ON-STATE CURRENT (AMP)
Figure 4. Power Dissipation
4.0
3.0 3.0
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
2.0 2.0
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
1.0 1.0
0.7 0.7
0.5 0.5
0.3
–60
–40 –20 0 20 40 60 80 100 120
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Gate–Trigger Voltage
140
0.3
–60 –40
–20 0 20 40 60 80 100
TJ, JUNCTION TEMPERATURE (°C)
120 140
Figure 6. Typical Gate–Trigger Current
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