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NPN 2N6057 – 2N6058 – 2N6059
POWER COMPLEMENTARY SILICON TRANSISTORS
The 2N6057, 2N6058 and 2N6059 are silicon epitaxial-base transistors in monolithic Darlington
configuration mounted in Jedec TO-3 metal case.
They are inteded for use in power linear and low frequency switching applications.
The complementary PNP types are 2N6050, 2N6051 and 2N6052 respectively.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
Collector-Base Voltage
IE=0
VCEO
Collector-EmitterVoltage
www.DataSheet.net/
IB=0
VCEX
VEBO
IC
ICM
IB
PT
TJ
Ts
Collector-EmitterVoltage
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
VBE= 1.5 V
IC=0
@ TC < 25°
Value
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
60
80
100
60
80
100
60
80
100
5.0
12
20
200
150
200
-65 to +200
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
Value
1.17
Unit
V
V
V
V
A
A
mA
W
°C
Unit
°C/W
17/10/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/

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NPN 2N6057 – 2N6058 – 2N6059
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ MAx Unit
ICEX
ICEO
IEBO
VCEO(SUS)
Collector Cutoff
Current
Collector Cutoff
Current
Emitter Cutoff
Current
VCE= VCEX =60 V, VBE=-1.5 V
VCE= VCEX =80 V, VBE=-1.5 V
VCE= VCEX =100 V
VBE=-1.5 V
VCE= VCEX =60 V, VBE=-1.5 V
TC=150°C
VCE= VCEX =80 V, VBE=-1.5 V
TC=150°C
VCE= VCEX =100 V
VBE=-1.5 V, TC=150°C
VCE=30 Vdc, IB=0
VCE=40 Vdc, IB=0
VCE=50 Vdc, IB=0
VEB=5 V
www.DataSheet.net/
Collector-Emitter
Sustaining Voltage IC=0.1 A
(*)
VCE(SAT)
VBE(SAT)
VBE(ON)
Collector-Emitter
saturation Voltage
(*)
IC=6 A, IB=24 mA
IC=12 A, IB=120 mA
Base-Emitter
Saturation Voltage IC=12 A, IB=120 mA
(*)
Base-Emitter
Voltage (*)
IC=6 A, VCE=3 V
fT
Transition
Frequency
IC=5 A, VCE=3 V, f=1 MHz
VCE=3 V, IC=6.0 A
hFE
DC Current Gain
(*)
VCE=3.0 V, IC=12 A
(*) Pulse Width 300 µs, Duty Cycle 2.0%
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
17/10/2012
COMSET SEMICONDUCTORS
-
-
-
-
-
-
-
-
-
-
-
-
60
80
100
-
-
-
-
4
750
100
-
- 500 µA
-
-
- 5 mA
-
-
- 1.0 mA
-
-
- 2.0 mA
-
--
- -V
--
- 2.0
V
- 3.0
- 4V
- 2.8 V
- - MHz
- 18000 -
--
2|3
Datasheet pdf - http://www.DataSheet4U.co.kr/

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NPN 2N6057 – 2N6058 – 2N6059
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
min max
A 11 13.10
B
0.97
1.15
C 1.5 1.65
D
8.32
8.92
F 19 20
G
10.70
11.1
N 16.50 17.20
P 25 26
R 4 4.09
U 38.50 39.30
V 30 30.30
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
www.DataSheet.net/
Revised September 2012
         
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
 
www.comsetsemi.com
17/10/2012
COMSET SEMICONDUCTORS
info@comsetsemi.com
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Datasheet pdf - http://www.DataSheet4U.co.kr/