AP6680AGM.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 AP6680AGM 데이타시트 다운로드

No Preview Available !

Advanced Power
Electronics Corp.
Low On-Resistance
Simple Drive Requirement
Fast Switching Characteristic
G
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
AP6680AGM
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
RDS(ON)
ID
30V
11mΩ
12A
S
D
D
D
D
SO-8
G
S
S
S
Absolute Maximum Ratings
Symbol
Parameter
www.DataSheet.net/
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Rating
30
+20
12
9.8
60
2.5
0.02
-55 to 150
-55 to 150
Value
50
Units
V
V
A
A
A
W
W/
Unit
/W
Data and specifications subject to change without notice
1
200810084
Datasheet pdf - http://www.DataSheet4U.co.kr/

No Preview Available !

AP6680AGM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=12A
VGS=4.5V, ID=8A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=12A
Drain-Source Leakage Current
VDS=30V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS=+20V
ID=12A
Gate-Source Charge
VDS=25V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=4.5V
VDS=15V
Rise Time
ID=1A
Turn-off Delay Time
RG=3.3Ω,VGS=10V
Fall Time
RD=15Ω
Input Capacitance
VGS=0Vwww.DataSheet.net/
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
Gate Resistance
f=1.0MHz
30 - - V
- 0.02 - V/
- - 11 m
- - 16.5 m
0.8 - 2.5 V
- 12 -
S
- - 1 uA
- - 25 uA
- - +100 nA
- 17 27 nC
- 2.7 - nC
- 9.9 - nC
- 9 - ns
- 6 - ns
- 29 - ns
- 8 - ns
- 1000 1600 pF
- 220 - pF
- 175 - pF
- 1 1.5
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=2.1A, VGS=0V
IS=12A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 26 - ns
- 20 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 /W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
Datasheet pdf - http://www.DataSheet4U.co.kr/

No Preview Available !

50
T A = 25 o C
10V
7.0 V
40 5.0 V
4.5 V
30 V G = 3.0 V
20
10
0
012345
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
60
ID=8A
T A =25
40
AP6680AGM
50
T A = 150 o C
10V
7.0 V
40 5.0 V
4.5 V
30 V G = 3.0 V
20
10
0
01234567
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I D = 12 A
V G =10V
1.3
20
www.DataSheet.net/
1.0
0
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
8
T j =150 o C
T j =25 o C
6
4
2
0
0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
0.7
25 50 75 100 125
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20.0
150
V GS =4.5V
V GS =10V
10.0
0.0
0
10 20 30
I D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
40
3
Datasheet pdf - http://www.DataSheet4U.co.kr/

No Preview Available !

AP6680AGM
16
f=1.0MHz
10000
I D = 12 A
12
V DS =15V
V DS =20V
V DS = 25 V
8
1000
C iss
4
0
0 10 20 30 40
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
100us
1ms
1 10ms
100ms
0.1 1s
T A =25 o C
Single Pulse
DC
0.01
0.01 0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
50
V DS =5V
T j =25 o C T j =150 o C
40
30
20
10
0
024
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
C oss
C rss
100
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
0.1
www.DataSheet.net/
0.01
Duty factor=0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 135/W
0.001
0.0001
0.001
0.01
0.1
1
10 100 1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 12. Gate Charge Waveform
4
Datasheet pdf - http://www.DataSheet4U.co.kr/

No Preview Available !

ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
8 7 65
1
2
34
e
B
E1 E
SYMBOLS
A
A1
B
c
D
E
E1
e
G
L
α
Millimeters
MIN NOM MAX
1.35 1.55 1.75
0.10 0.18 0.25
0.33 0.41 0.51
0.19 0.22 0.25
4.80 4.90 5.00
5.80 6.15 6.50
3.80 3.90 4.00
1.27 TYP
0.254 TYP
0.38 0.90
0.00 4.00 8.00
A
A1
G
www.DataSheet.net/
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SO-8
6680AGM
YWWSSS
Part Number
Package Code
meet Rohs requirement
Date Code (YWWSSS)
YLast Digit Of The Year
WWWeek
SSSSequence
5