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SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651
SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe.
They are intended for output stages in audio equipment, general amplifiers, and analogue
switching application.
PNP complements are BD644, BD646, BD648, BD650 and BD652
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
Collector-Base Voltage
www.DataSheet.net/
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
ICM Collector Peak Current
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
Value
60
80
100
120
140
45
60
80
100
120
5
8
12
Unit
V
V
V
A
A
17/10/2012
COMSET SEMICONDUCTORS
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Datasheet pdf - http://www.DataSheet4U.co.kr/

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SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
BD643
BD645
IB Base Current
BD647
BD649
300
BD651
BD643
BD645
PT
Power Dissipation
@ Tmb < 25°
BD647
62.5
BD649
BD651
BD643
BD645
TJ Junction Temperature
BD647
BD649
150
BD651
www.DataSheet.net/
BD643
BD645
Ts Storage Temperature range
BD647 -65 to +150
BD649
BD651
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Unit
mA
Watts
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-MB
RthJ-A
From junction to mounting base
From junction to ambient in free air
Value
2
62.5
Unit
K/W
K/W
17/10/2012
COMSET SEMICONDUCTORS
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Datasheet pdf - http://www.DataSheet4U.co.kr/

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SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
ICBO Collector Cutoff Current
ICEO Collector Cutoff Current
IEBO Emitter Cutoff Current
VCEO
Collector-Emitter
Breakdown Voltage
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
VBE(SAT)
Base-Emitter Saturation
Voltage (*)
Test Condition(s)
IE=0,VCB =VCEOMax
IE=0,VCB =1/2
VCBOMax
TJ=150°C
IE=0, VCE =1/2
VCEOMax
www.DataSheet.net/
VEB=5 V, IC=0
IC=30 mA, IB= 0
IC=4 A, IB=16 mA
IC=3 A, IB=12 mA
IC=5 A, IB=50 mA
IC=12 A, IB=50 mA
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
Min Typ Max Unit
- - 0.2 mA
- - 2 mA
- - 0.5 mA
- - 5.0 mA
45 -
-
60 -
-
80 - - V
100 -
-
120 -
-
- -2
- -2
V
- - 2.5
- - 3V
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COMSET SEMICONDUCTORS
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SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
IC=4 A, VCE=3 V
BD643
BD645
VBE
Base-Emitter Voltage (*) IC=3 A, VCE=3 V
BD647
BD649
BD651
BD643
BD645
VCE=3.0 V, IC=0.5 A BD647
BD649
BD651
VCE=3.0 V, IC=4 A BD643
BD645
hFE
DC Current Gain (*)
VCE=3.0 V, IC=3 A
BD647
BD649
BD651
www.DataSheet.net/
BD643
BD645
VCE=3.0 V, IC=8 A BD647
BD649
BD651
VCE=3.0 V, IC=4 A
f=1MHz
BD643
hfe
Small Signal Current Gain VCE=3.0 V, IC=3 A
BD645
BD647
f=1MHz
BD649
BD651
(*) Pulse Width 300 µs, Duty Cycle 2.0%
Min Typ Max Unit
- - 2.5
- - 2.5 V
- 1900 -
750 -
-
750 - - -
- 1800 -
10 -
-
10 -
10 -
-
-
-
10 -
-
10 -
-
17/10/2012
COMSET SEMICONDUCTORS
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SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min. Max.
A 9,90 10,30
B 15,65 15,90
C 13,20 13,40
D 6,45 6,65
E 4,30 4,50
F
2,70
3,15
G
2,60
3,00
H 15,75 17.15
L
1,15
1,40
M
3,50
3,70
N - 1,37
P 0,46 0,55
R 2,50 2,70
S 4,98 5,08
T
2.49
2.54
U 0,70 0,90
www.DataSheet.net/
Pin 1 :
Pin 2 :
Pin 3 :
Case :
Base
Collector
Emitter
Collector
Revised September 2012
         
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
 
www.comsetsemi.com
17/10/2012
COMSET SEMICONDUCTORS
info@comsetsemi.com
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Datasheet pdf - http://www.DataSheet4U.co.kr/