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SEMICONDUCTORS
BD644 – 646 – 648 – 650 – 652
SILICON DARLINGTON POWER TRANSISTORS
PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe. They are intended for output stages in audio equipment, general amplifiers, and
analogue switching application.
NPN complements are BD643, BD645, BD647, BD649 and BD651
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
-VCBO
Collector-Base Voltage
www.DataSheet.net/
-VCEO
Collector-Emitter Voltage
-VEBO
Emitter-Base Voltage
-IC Collector Current
-ICM Collector Peak Current
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
Value
45
60
80
100
120
45
60
80
100
120
5
8
12
Unit
V
V
V
A
A
18/10/2012
COMSET SEMICONDUCTORS
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Datasheet pdf - http://www.DataSheet4U.co.kr/

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SEMICONDUCTORS
BD644 – 646 – 648 – 650 – 652
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
BD644
BD646
-IB Base Current
BD648
BD650
150
BD652
BD644
BD646
PT
Power Dissipation
@ Tmb < 25°
BD648
BD650
62.5
BD652
BD644
BD646
TJ Junction Temperature
BD648
BD650
150
BD652
www.DataSheet.net/
BD644
BD646
Ts Storage Temperature range
BD648 -65 to +150
BD650
BD652
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Unit
mA
Watts
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-MB
RthJ-A
From junction to mounting base
From junction to ambient in free air
Value
2
70
Unit
K/W
K/W
18/10/2012
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Datasheet pdf - http://www.DataSheet4U.co.kr/

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SEMICONDUCTORS
BD644 – 646 – 648 – 650 – 652
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
-ICBO
-ICEO
-IEBO
-VCE(SAT)
-VBE(SAT)
Collector Cutoff
Current
Collector Cutoff
Current
Emitter Cutoff Current
Collector-Emitter
saturation Voltage (*)
Base-Emitter
Saturation Voltage (*)
-IE=0,-VCB =-VCEOMAX
-IE=0,-VCB =1/2 -
VCBOMAX, TJ=150°C
-IE=0, -VCE =1/2 -
VCEOMAX
www.DataSheet.net/
-VEB=5 V, -IC=0
-IC=4 A, -IB=16 mA
-IC=3 A, -IB=12 mA
-IC=5 A, -IB=50 mA
-IC=12 A, -IB=50 mA
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
Min Typ Max Unit
- - 0.1 mA
- - 1 mA
- - 0.2 mA
- - 5.0 mA
- -2
- -2
V
- - 2.5
- - 3V
18/10/2012
COMSET SEMICONDUCTORS
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Datasheet pdf - http://www.DataSheet4U.co.kr/

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SEMICONDUCTORS
BD644 – 646 – 648 – 650 – 652
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
-VBE
Base-Emitter Voltage
(*)
-IC=4 A, -VCE=3 V
-IC=3 A, -VCE=3 V
-VCE=3.0 V
-IC=0.5 A
-VCE=3.0 V, -IC=4 A
hFE
DC Current Gain (*)
-VCE=3.0 V, -IC=3 A
www.DataSheet.net/
-VCE=3.0 V, -IC=8 A
-VCE=3.0 V, -IC=4 A
f=1MHz
hfe
Small Signal Current
Gain
-VCE=3.0 V
-IC=3 A, f=1MHz
ton turn-on time
toff turn-off time
-IC=3 A
-IBon= IBoff=12 mA
(*) Pulse Width 300 µs, Duty Cycle 2.0%
Min Typ Max Unit
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
-
-
-
750
750
-
BD644 10
BD646
BD648
BD650
BD652
All types
10
-
-
-
-
2700
-
-
200
-
-
1
5
2.5
2.5
-
-
-
-
-
-
-
-
V
-
µs
18/10/2012
COMSET SEMICONDUCTORS
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Datasheet pdf - http://www.DataSheet4U.co.kr/

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SEMICONDUCTORS
BD644 – 646 – 648 – 650 – 652
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min. Max.
A
9,90
10,30
B
15,65
15,90
C
13,20
13,40
D
6,45
6,65
E
4,30
4,50
F
2,70
3,15
G
2,60
3,00
H
15,75
17.15
L
1,15
1,40
M
3,50
3,70
N - 1,37
P
0,46
0,55
R
2,50
2,70
S
4,98
5,08
T
2.49
2.54
U
0,70
0,90
www.DataSheet.net/
Pin 1 :
Pin 2 :
Pin 3 :
Package
Base
Collector
Emitter
Collector
Revised September 2012
         
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
 
www.comsetsemi.com
18/10/2012
COMSET SEMICONDUCTORS
info@comsetsemi.com
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