A1359.pdf 데이터시트 (총 12 페이지) - 파일 다운로드 A1359 데이타시트 다운로드

No Preview Available !

A1359
Factory-Programmed Dual Output Linear Hall Effect Sensor IC
With Analog and Pulse Width Modulated Outputs
Features and Benefits
• Dual tracking outputs: analog voltage output and pulse
width modulated (PWM) output
• Matched analog and PWM outputs enable user to detect
various output error conditions
• Factory-programmed offset, sensitivity, and polarity
• Sensitivity temperature coefficient (TC) and QVO/QD
temperature coefficient programmed at Allegrofor
improved accuracy
• High speed chopping scheme minimizes quiescent voltage
output (QVO) drift across temperature
• Temperature-stable QVO and sensitivity
• Output voltage clamps provide short circuit diagnostic
capabilities
• Wide ambient temperature range: –40°C to 150°C
• Immune to mechanical stress
• Enhanced EMC performance for stringent automotive
applications
Package: 8-pin TSSOP (suffix LE)
surface mount
Description
New applications for linear output Hall effect sensors, such
as displacement and angular position, require high accuracy
in conjunction with redundant outputs. The Allegro A1359
programmable, linear, Hall effect sensor IC has been designed
specifically to achieve both goals. The features associated
with this linear device make it ideal for use in automotive
and industrial applications requiring high accuracy, and
this temperature-stable device operates across an extended
temperature range: –40°C to 150°C.
The accuracy of the device is enhanced via programmability
at the Allegro factory for optimization of device sensitivity,
the quiescent voltage output (QVO: output with no magnetic
field), and quiescent duty cycle (QD) for a given application or
circuit. The A1359 also allows optimized performance across
the entire operating temperature range via programming the
temperature coefficients for both sensitivity and QVO/QD at
Allegro end-of-line test. This ratiometric Hall effect sensor IC
provides a analog voltage, and a PWM signal with duty cycle,
that are proportional to the applied magnetic field.
Each BiCMOS monolithic circuit integrates a Hall element,
temperature-compensating circuitry to reduce the intrinsic
sensitivity drift of the Hall element, a small-signal high-gain
Not to scale
Continued on the next page…
VSUPPLY
VCC
CBYPASS
100 nF
Functional Block Diagram
Chopper
Switches
Amp
Signal
Recovery
Signal
Conditioning
Low-Pass
Filter
Sensitivity, QVO, and
Temperature Compensation
PWM
Frequency Trim
PWM Carrier
Generation
Mismatch
Compensation
VOUT
RPULLUP
PWMOUT
GND
A1359-DS, Rev. 1

No Preview Available !

A1359
Factory-Programmed Dual Output Linear Hall Effect Sensor IC
With Analog and Pulse Width Modulated Outputs
Description (continued)
amplifier, a clamped low-impedance output stage and a proprietary
dynamic offset cancellation technique.
The A1359 is provided in an 8-contact surface mount TSSOP
(suffix LE) which is lead (Pb) free, with 100% matte tin
leadframe plating.
Selection Guide
Part Number
A1359LLETR-T
Factory Programmed Output Polarity
Forward: Output voltage increases with increasing
positive (south) applied magnetic field
A1359LLETR-RP-T
Reverse: Output voltage increases with increasing
negative (north) applied magnetic field
*Contact Allegro for additional packing options
Packing*
4000 units / reel
4000 units / reel
Absolute Maximum Ratings
Characteristic
Forward Supply Voltage
Reverse Supply Voltage
Forward Output Voltage
Reverse Output Voltage
Forward PWM Output Voltage
Reverse PWM Output Voltage
Output Source Current
Output Sink Current
PWM Output Source Current
PWM Output Sink Current
Operating Ambient Temperature
Storage Temperature
Maximum Junction Temperature
Symbol
VCC
VRCC
VOUT
VROUT
VPWM
VRPWM
IOUT(SOURCE)
IOUT(SINK)
IPWM(SOURCE)
IPWM(SINK)
TA
Tstg
TJ(max)
Notes
Refer to Power Derating section
Refer to Power Derating section
Refer to Power Derating section
VOUT to GND
VCC to VOUT
VPWM > –0.5 V, TA = 25°C
Internal current limiting is intended to protect the
device from momentary short circuits and not
intended for continuous operation
Temperature range L
Rating
6
–0.1
7
–0.1
7
–0.1
2
10
–50
25
–40 to 150
–65 to 170
165
Unit
V
V
V
V
V
V
mA
mA
mA
mA
ºC
ºC
ºC
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
2

No Preview Available !

A1359
Factory-Programmed Dual Output Linear Hall Effect Sensor IC
With Analog and Pulse Width Modulated Outputs
Pin-out Diagram
PWMOUT 1
VCC 2
NC 3
VOUT 4
8 NC
7 GND
6 NC
5 NC
Terminal List Table
Number
1
Name
PWMOUT Open drain PWM output
Function
2
VCC
Input power supply; tie to GND with bypass capacitor
3 NC No connect, tie to either GND or VCC
4 VOUT Output signal
5 NC No connect, tie to either GND or VCC
6 NC No connect, tie to either GND or VCC
7 GND Device ground
8 NC No connect, tie to either GND or VCC
Thermal Characteristics may require derating at maximum conditions, see application information
Characteristic
Symbol
Test Conditions*
Value
Package Thermal Resistance
RθJA On 4-layer PCB based on JEDEC standard
145
*Additional thermal information available on the Allegro website
Unit
ºC/W
Power Dissipation versus Ambient Temperature
1000
900
800
700
600
500
400
300
200
100
0
20 40 60 80 100 120 140 160 180
Temperature, TA (°C)
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
3

No Preview Available !

A1359
Factory-Programmed Dual Output Linear Hall Effect Sensor IC
With Analog and Pulse Width Modulated Outputs
OPERATING CHARACTERISTICS Valid over full operating temperature range, TA, CBYPASS = 0.1 μF , VCC = 5 V,
unless otherwise noted
Characteristics
Symbol
Test Conditions
Min. Typ. Max.
Electrical Characteristics
Supply Voltage
Undervoltage Threshold2
Supply Current
Supply Zener Clamp Voltage
Internal Bandwidth3
Chopping Frequency3,4
VCC
VUVLOHI
VUVLOLOW
ICC
VZ
BWi
fC
TA = 25°C (device powers on)
TA = 25°C (device powers off)
VCC = 5 V
TA = 25°C, ICC = 20 mA
Small signal, –3 dB
TA = 25°C
4.5 5.0 5.5
––3
2.5 –
– 10 13.5
6 8.3 –
–2–
– 400 –
Analog Output Characteristics
Output Referred Noise3
VN
TA = 25°C, CBYPASS = 0.1 μF, Sens = 5 mV/G,
no load on VOUT
6
Input Referred RMS Noise Density3
DC Output Resistance3
Output Load Resistance3
Output Load Capacitance3
Analog Output Current Limit
Output Voltage Clamp5
VNRMS
ROUT
RL
CL
ILIMIT(ALG)
VCLPH
VCLPL
T = 25°C, CBYPASS = open, no load on VOUT,
f << BWi
VOUT to GND
VOUT to GND
RPULLUP = 0 Ω
TA = 25°C, B = +350 G,
RL = 10 kΩ (VOUT to GND)
TA = 25°C, B = –350 G,
RL = 10 kΩ (VOUT to VCC)
– 1.9 –
– <1 –
4.7 –
– – 10
10 – 80
4.25 4.5 4.65
0.40 0.5 0.70
Response Time3
tRESPONSE_ Impulse magnetic field of 300 G
VOUT
– – 500
Settling Time3
Power-On Time for Analog3
Delay to Clamp for Analog3
tSETTLEVOUT
tPOVOUT
tCLPVOUT
TA = 25°C, Primary Overload > 5000 G
TA = 25°C, CL (probe) = 10 pF, on VOUT
TA = 25°C, CL = 10 nF, on VOUT
– – 750
– 250 –
– 30 –
PWM Output Characteristics
PWMOUT Saturation Voltage
PWMOUT Current Limit
PWMOUT Leakage Current
VSAT
ILIMIT
ILEAK
IPWMOUT(SINK) 20 mA, PWMOUT transistor on
IPWMOUT(SINK) 10 mA, PWMOUT transistor on
RPULLUP = 0 Ω
VCC = GND, 0 V VPWMOUT 5 V,
PWMOUT transistor off
30
0.6
– 0.5
60 110
0.1 10
PWMOUT Zener Clamp Voltage
PWMOUT Rise Time3
PWMOUT Fall Time3
Power-On Time for PWM3
Delay to Clamp for PWM3
Response Time3
Settling Time3
VZOUT IPWMOUT(SINK) = 10 mA, TA = 25ºC
tr TA = 25°C, RPULLUP = 2 kΩ, CL = 20 pF
tf TA = 25°C, RPULLUP = 2 kΩ, CL = 20 pF
tPOPWM TA = 25°C, CL (probe) = 10 pF, on PWMOUT
tCLPPWM TA = 25°C, CL = 10 nF, on PWMOUT
tRESPONSE_
PWM
TA = 25°C, Impulse magnetic field of 300 G
tSETTLEPWM TA = 25°C, Primary Overload > 5000 G
28 –
–3
–3
– 500
– 250
– – 1.5
– – 2.25
Unit1
V
V
V
mA
V
kHz
kHz
mV(p-p)
mG/Hz
Ω
kΩ
nF
mA
V
V
μs
μs
μs
μs
V
V
mA
μA
V
μs
μs
μs
μs
ms
ms
Continued on the next page…
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
4

No Preview Available !

A1359
Factory-Programmed Dual Output Linear Hall Effect Sensor IC
With Analog and Pulse Width Modulated Outputs
OPERATING CHARACTERISTICS (continued) Valid over full operating temperature range, TA, CBYPASS = 0.1 μF , VCC = 5 V,
unless otherwise noted
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Unit1
PWM Output Characteristics (continued)
Load Resistance3,6
RPULLUP
Load Capacitance3,6
CL
Duty Cycle Jitter3
JitterPWM
PWMOUT to VCC
PWMOUT to GND
Measured over 1000 PWM output clock periods,
3 sigma values, Sens = 9 mV/G
2000
±0.18
10
Ω
nF
%D
Quiescent Voltage Output (QVO)
Quiescent Voltage Output
Quiescent Voltage Output
Equivalent PWM
VOUT(Q)
D(Q)
TA = 25°C
TA = 25°C, VCC = 4.5 to 5.5 V
2.45 2.5 2.55
49 50 51
V
%D
PWM Carrier Frequency
Carrier Frequency
Sensitivity
Sensitivity Temperature Coefficient
fPWM
TA = 25°C
TCSENS
Programmed at TA = 150°C, calculated relative
to Sens at 25°C
3.6
0.08
4
0.12
4.4
0.16
kHz
%/°C
Analog Sensitivity7
Error Components
PWM to Analog Output Mismatch8
Linearity Sensitivity Error9
Symmetry Sensitivity Error9
Ratiometry Quiescent Voltage
Output Error10
Ratiometry Sensitivity Error9
Ratiometry Clamp Error10
Quiescent Voltage Output Drift Through
Temperature Range
A1359LLETR-T
Sen
B = ±125 G, TA = 25°C
A1359LLETR-RP-T B = ±125 G, TA = 25°C
VOUTERR
1.75 V < VOUT < 3.25 V
VOUT = 1.25 V, VOUT = 3.75 V
LinERR
SymERR
RatVOUT(Q)
Across supply voltage range,
(relative to VCC = 5 V)
RatSens
Across supply voltage range,
(relative to VCC = 5 V)
RatVOUTCLP
TA = 25°C, across supply voltage range, (relative
to VCC = 5 V)
VOUT(Q) TA =150°C
8.73
–9.27
–57.4
–85
–17
9.0
–9.0
±0.5
±0.5
±0.5
±0.5
±0.5
9.27
–8.73
+57.4
+85
+17
mV/G
mV/G
mV
mV
%
%
%
%
%
mV
Sensitivity Drift Due to Package
Hysteresis
SensPKG TA = 25°C, after temperature cycling
– ±2 –
%
11 G (gauss) = 0.1 mT (millitesla).
2At power-up, the output is held low until VCC exceeds VUVLOHI. When the device reaches the operational power level, the output remains valid until
VCC drops below VUVLOLO, when the output is pulled low.
3Determined by design and characterization, not evaluated at final test.
4fc varies as much as approximately ±20% across the full operating ambient temperature range and process.
5VCLPL and VCLPH scale with VCC , due to ratiometry.
6Load capacitance and resistance directly effects the rise time of the PWM output by tr = 0.35 × 2 × π × RL× CL.
7Room temperature sensitivity can drift, ΔSensLIFE , by an additional 3% (typical worst case) over the life of the product.
8See Characteristic Definitions section.
9Applicable to both analog and PWM channels. Tested at Allegro factory for only the analog channel, and determined by design and characterization
for the PWM channel.
10Applies only to the analog channel.
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
5