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SSM60T03GH,J
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
R DS(ON)
ID
30V
12m
45A
Pb-free; RoHS-compliant TO-251 (IPAK)
and TO-252 (DPAK)
G
D
S
TO-251 (suffix J)
G DS
TO-252 (suffix H)
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
The SSM60T03 acheives fast switching performance
with low gate charge without a complex drive circuit. It is
suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM60T03GH is in a TO-252 package, which is
widely used for commercial and industrial surface-mount
applications.
The through-hole version, the SSM60T03GJ in TO-251,
is available for vertical mounting, where a small footprint
is required on the board, and/or an external heatsink is
to be attached.
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
The devices have a maximum junction temperature rating
of 175°C for improved thermal margin and reliability.
Symbol
VDS
VGS
ID
IDM
PD
EAS
TSTG
TJ
Parameter
Drain-source voltage
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Gate-source voltage
Continuous drain current, TC = 25°C
Pulsed drain current1
TC = 100°C
Total power dissipation, TC = 25°C
Linear derating factor
Single pulse avalanche energy3
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
RΘJC
RΘJA
Parameter
Maximum thermal resistance, junction-case
Maximum thermal resistance, junction-ambient
Value
30
±20
45
32
120
44
0.352
29
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/°C
mJ
°C
°C
Value
3.4
110
Units
°C/W
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the safe operating area.
2.Pulse width <300us, duty cycle <2%.
3.VDD=25V , L=100uH , RG=25, IAS=24A.
10/16/2005 Rev.3.1
www.SiliconStandard.com
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SSM60T03GH,J
ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified)
Symbol
BVDSS
BV DSS/T j
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-source breakdown voltage
VGS=0V, ID=250uA
Breakdown voltage temperature coefficient Reference to 25°C, ID=1mA
Static drain-source on-resistance
Gate threshold voltage
Forward transconductance
Drain-source leakage current
Gate-source leakage current
Total gate charge2
Gate-source charge
Gate-drain ("Miller") charge
Turn-on delay time2
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
VGS=10V, ID=20A
VGS=4.5V, ID=15A
VDS=VGS, ID=250uA
VDS=10V, ID=10A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V, Tj=175°C
VGS= ±20V
ID=20A
VDS=20V
VGS=4.5V
VDS=15V
ID=20A
RG=3.3Ω , VGS=10V
RD=0.75
VGS=0V
VDS=25V
http://www.DataSheet4U.net/
f=1.0MHz
Min. Typ. Max. Units
30 -
-V
- 0.026 - V/°C
- - 12 m
- - 25 m
1 - 3V
- 25 -
S
- - 1 uA
- - 250 uA
- - ±100 nA
- 11.6 - nC
- 3.9 - nC
- 7 - nC
- 8.8 - ns
- 57.5 - ns
- 18.5 - ns
- 6.4 - ns
- 1135 - pF
- 200 - pF
- 135 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward voltage2
Reverse-recovery time2
Reverse-recovery charge
Test Conditions
IS=45A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ. Max. Units
- 1.3 V
23.3 - ns
16 - nC
Notes:
1.Pulse width must be limited to avoid exceeding the safe operating area.
2.Pulse width <300us, duty cycle <2%.
3.VDD=25V , L=100uH , RG=25, IAS=24A.
10/16/2005 Rev.3.1
www.SiliconStandard.com
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125
T C =25 o C
100
75
50
25
10V
8.0V
6.0V
5.0V
V G =4.0V
0
0123
V DS , Drain-to-Source Voltage (V)
4
Fig 1. Typical Output Characteristics
80
I D =20A
T C =25 ° C
60
90
T C =175 o C
60
SSM60T03GH,J
10V
8.0V
6.0V
5.0V
30
V G =4.0V
0
012345
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2
I D =20A
V G =10V
1.6
40 1.2
20
0
3579
V GS , Gate-to-Source Voltage (V)
11
Fig 3. On-Resistance vs. Gate Voltage
100
10
T j =175 o C
1
T j =25 o C
0.8
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0.4
-50 25 100 175
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
2.8
2.3
1.8
1.3
0.8
0.1
0 0.5 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
0.3
-50 25 100 175
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
10/16/2005 Rev.3.1
www.SiliconStandard.com
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datasheet pdf - http://www.DataSheet4U.net/