SSM60T03GP.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 SSM60T03GP 데이타시트 다운로드

No Preview Available !

SSM60T03GP,S
N-channel Enhancement-mode Power MOSFET
Low gate-charge
Simple drive requirement
D
Fast switching
G
Pb-free, RoHS compliant.
S
DESCRIPTION
BVDSS
R DS(ON)
ID
The SSM60T03GS is in a TO-263 package, which is widely used for
commercial and industrial surface-mount applications. This device is
G
DS
suitable for low-voltage applications such as DC/DC converters.
The through-hole version, the SSM60T03GP in TO-220, is available for
vertical-mounting, where a small footprint is required on the board, and/or
an external heatsink is to be attached.
These devices are manufactured with an advanced process, permitting
operation up to a maximum junction temperature of 175°C.
ABSOLUTE MAXIMUM RATINGS
G
D
S
Symbol
VDS
VGS
ID @ TC=25°C
ID @ TC=100°C
IDM
PD @ TC=25°C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
http://www.DataSheet4U.net/
Rating
30
±20
45
32
120
44
0.352
30V
12m
45A
TO-263 (S)
TO-220(P)
Units
V
V
A
A
A
W
W/°C
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
RΘJC
RΘJA
Parameter
Maximum Thermal Resistance Junction-case
Maximum Thermal Resistance Junction-ambient
-55 to 175
-55 to 175
Value
3.4
62
°C
°C
Units
°C/W
°C/W
9/16/2005 Rev.3.1
www.SiliconStandard.com
1 of 5
datasheet pdf - http://www.DataSheet4U.net/

No Preview Available !

SSM60T03GP,S
ELECTRICAL CHARACTERISTICS (at Tj=25°C, unless otherwise specified)
Symbol
BVDSS
BV DSS/Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=20A
Gate Threshold Voltage
Forward Transconductance2
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=175oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=15A
VDS=VGS, ID=250uA
VDS=10V, ID=10A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V
VGS= ±20V
ID=20A
VDS=24V
VGS=4.5V
VDS=15V
ID=20A
RG=3.3, VGS=10V
RD=0.75
VGS=0V
VDS=25V
http://www.DataSheet4U.net/
f=1.0MHz
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=45A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
30 -
-V
- 0.03 - V/°C
- - 12 m
- - 25 m
1 - 3V
- 25 -
S
- - 1 uA
- - 250 uA
- - ±100 nA
- 11.6 19 nC
- 3.9 - nC
- 7 - nC
- 8.8 - ns
- 57.5 - ns
- 18.5 - ns
- 6.4 - ns
- 1135 1816 pF
- 200 - pF
- 135 - pF
Min. Typ. Max. Units
- - 1.3 V
- 23.3 - ns
- 16 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us, duty cycle <2%.
9/16/2005 Rev.3.1
www.SiliconStandard.com
2 of 5
datasheet pdf - http://www.DataSheet4U.net/

No Preview Available !

125
100 T C =25 o C
75
50
10V
8.0V
6.0V
5.0V
25 V G =4.0V
0
0123
V DS , Drain-to-Source Voltage (V)
4
Fig 1. Typical Output Characteristics
80
I D =15A
T C =25 ° C
60
SSM60T03GP,S
90
T C =175 o C
60
10V
8.0V
6.0V
5.0V
30
V G =4.0V
0
012345
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2
I D =20A
V G =10V
1.6
40 1.2
20
0.8http://www.DataSheet4U.net/
0
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
100
0.4
-50 25 100 175
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
3
10
T j =175 o C
1
T j =25 o C
2
1
0.1
0 0.5 1 1.5
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0
-50 25 100 175
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
9/16/2005 Rev.3.1
www.SiliconStandard.com
3 of 5
datasheet pdf - http://www.DataSheet4U.net/