SSM60T03GP.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 SSM60T03GP 데이타시트 다운로드

No Preview Available !

SSM60T03GP,S
N-channel Enhancement-mode Power MOSFET
Low gate-charge
Simple drive requirement
D
Fast switching
G
Pb-free, RoHS compliant.
S
DESCRIPTION
BVDSS
R DS(ON)
ID
The SSM60T03GS is in a TO-263 package, which is widely used for
commercial and industrial surface-mount applications. This device is
G
DS
suitable for low-voltage applications such as DC/DC converters.
The through-hole version, the SSM60T03GP in TO-220, is available for
vertical-mounting, where a small footprint is required on the board, and/or
an external heatsink is to be attached.
These devices are manufactured with an advanced process, permitting
operation up to a maximum junction temperature of 175°C.
ABSOLUTE MAXIMUM RATINGS
G
D
S
Symbol
VDS
VGS
ID @ TC=25°C
ID @ TC=100°C
IDM
PD @ TC=25°C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
http://www.DataSheet4U.net/
Rating
30
±20
45
32
120
44
0.352
30V
12m
45A
TO-263 (S)
TO-220(P)
Units
V
V
A
A
A
W
W/°C
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
RΘJC
RΘJA
Parameter
Maximum Thermal Resistance Junction-case
Maximum Thermal Resistance Junction-ambient
-55 to 175
-55 to 175
Value
3.4
62
°C
°C
Units
°C/W
°C/W
9/16/2005 Rev.3.1
www.SiliconStandard.com
1 of 5
datasheet pdf - http://www.DataSheet4U.net/

No Preview Available !

SSM60T03GP,S
ELECTRICAL CHARACTERISTICS (at Tj=25°C, unless otherwise specified)
Symbol
BVDSS
BV DSS/Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=20A
Gate Threshold Voltage
Forward Transconductance2
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=175oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=15A
VDS=VGS, ID=250uA
VDS=10V, ID=10A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V
VGS= ±20V
ID=20A
VDS=24V
VGS=4.5V
VDS=15V
ID=20A
RG=3.3, VGS=10V
RD=0.75
VGS=0V
VDS=25V
http://www.DataSheet4U.net/
f=1.0MHz
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=45A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
30 -
-V
- 0.03 - V/°C
- - 12 m
- - 25 m
1 - 3V
- 25 -
S
- - 1 uA
- - 250 uA
- - ±100 nA
- 11.6 19 nC
- 3.9 - nC
- 7 - nC
- 8.8 - ns
- 57.5 - ns
- 18.5 - ns
- 6.4 - ns
- 1135 1816 pF
- 200 - pF
- 135 - pF
Min. Typ. Max. Units
- - 1.3 V
- 23.3 - ns
- 16 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us, duty cycle <2%.
9/16/2005 Rev.3.1
www.SiliconStandard.com
2 of 5
datasheet pdf - http://www.DataSheet4U.net/

No Preview Available !

125
100 T C =25 o C
75
50
10V
8.0V
6.0V
5.0V
25 V G =4.0V
0
0123
V DS , Drain-to-Source Voltage (V)
4
Fig 1. Typical Output Characteristics
80
I D =15A
T C =25 ° C
60
SSM60T03GP,S
90
T C =175 o C
60
10V
8.0V
6.0V
5.0V
30
V G =4.0V
0
012345
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2
I D =20A
V G =10V
1.6
40 1.2
20
0.8http://www.DataSheet4U.net/
0
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
100
0.4
-50 25 100 175
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
3
10
T j =175 o C
1
T j =25 o C
2
1
0.1
0 0.5 1 1.5
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0
-50 25 100 175
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
9/16/2005 Rev.3.1
www.SiliconStandard.com
3 of 5
datasheet pdf - http://www.DataSheet4U.net/

No Preview Available !

12
I D =20A
9 V DS =16V
V DS =20V
V DS =24V
6
3
0
0 6 12 18
Q G , Total Gate Charge (nC)
24
Fig 7. Gate Charge Characteristics
1000
100
100us
10
1ms
10ms
100ms
DC
1
0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
SSM60T03GP,S
f=1.0MHz
10000
C iss
1000
C oss
C rss
100
1
8 15 22 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor = 0.5
0.2
0.1
http://www.DataSheet4U.net/
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
9/16/2005 Rev.3.1
www.SiliconStandard.com
4 of 5
datasheet pdf - http://www.DataSheet4U.net/

No Preview Available !

SSM60T03GP,S
http://www.DataSheet4U.net/
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
9/16/2005 Rev.3.1
www.SiliconStandard.com
5 of 5
datasheet pdf - http://www.DataSheet4U.net/