SBP13009D.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 SBP13009D 데이타시트 다운로드

No Preview Available !

SBP13009D
High Voltage Fast-Switching NPN Power Transistor
Features
Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
Built-in free wheeling diode
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VCEO
VEBO
IC
ICP
IB
IBM
PC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc = 25
Total Dissipation at Ta = 25
TJ Operation Junction Temperature
TSTG
Storage Temperature
Tc: Case temperature (good cooling)
Ta: Ambient temperature (without heat sink)
Test Conditions
VBE
http://www.DataSheet4U.net/
=
0
IB = 0
IC = 0
tP = 5ms
Thermal Characteristics
Symbol
Parameter
RθJc Thermal Resistance Junction to Case
RθJA Thermal Resistance Junction to Ambient
Value
700
400
9.0
12
25
6.0
12
100
2.2
- 40 ~ 150
- 40 ~ 150
Units
V
V
V
A
A
A
A
W
Value
1.25
40
Units
/W
/W
Jan 2009. Rev. 0
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
1/5
datasheet pdf - http://www.DataSheet4U.net/

No Preview Available !

SBP13009D
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
VCEO(sus) Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0
Value
Units
Min Typ Max
400 - - V
VCE(sat)
Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=1.6A
Collector-Emitter Saturation Voltage Ic=12A,Ib=3.0A
0.5
- - 1.0 V
1.5
VBE(sat) Base-Emitter Saturation Voltage
Collector-Base Cutoff Current
ICBO
(Vbe=-1.5V)
hFE DC Current Gain
Resistive Load
ts Storage Time
tf Fall Time
Inductive Load
ts Storage Time
tf Fall Time
Inductive Load
ts Storage Time
tf Fall Time
fT Current Gain Bandwidth Product
VF Diode Forward Voltage
COB Output Capacitance
Ic=8.0A,Ib=1.6A
Tc=100
I Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=1.6A
Ic=8.0A,Ib=1.6A
Tc=100
Vcb=700V
Vcb=700V, Tc=100
Vce=5V,Ic=5.0A
Vce=5V, Ic=8.0A
VCC=125V ,
ITBp1==12.56A ,http://www.DataSheet4U.net/
Ic=6.0A
IB2=-1.6A
- - 2.0 V
1.2
--
V
1.6
- - 1.5 V
1.0
--
mA
5.0
10 - 40
6 - 40
-
1.5 3.0
0.17 0.4
VCC=15V ,Ic=5A
LIB=1=01.3.65Am,HV,Vbcela(omfpf=)=350V0V
- 0.8 2.0
- 0.04 0.1
VCC=15V ,Ic=1A
LIB=1=00.2.4mAH,,VVcblea(mofpf)==350V0V
-
0.8 2.5
Tc=100- 0.05 0.15
IC=0.5A ,VCE=10V
4 - - MHz
IF=2A
- - 2.5 V
IC=0.5A ,VCE=10V
- 6.5
pF
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
2/5
.
datasheet pdf - http://www.DataSheet4U.net/

No Preview Available !

SBP13009D
Fig. 1 DC Current Gain
Fig. 2 Collector-Emitter Saturation Voltage
http://www.DataSheet4U.net/
Fig. 3 Base--Emitter Saturation Voltage
Fig. 4 Safe Operation Area
Fig.5 Power Derating
Fig.6 Reverse Biased Safe Operation Area
3/5
datasheet pdf - http://www.DataSheet4U.net/

No Preview Available !

SBP13009D
Resistive Load Switching Test Circuit
Inductive Load Switching & RBSOA Test Circuit
http://www.DataSheet
4/5
.
dat

No Preview Available !

TO-220 Package Dimension
SBP13009D
http://www.DataSheet4U.net/
5/5
datasheet pdf - http://www.DataSheet4U.net/