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2SA1485
Silicon PNP Epitaxial
Application
Low frequency amplifier
Outline
TO-92 (1)
3
2
1
1. Emitter
2. Collector
3. Base
Free Datasheet http://www.datasheet4u.com/

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2SA1485
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
–200
–200
–5
–100
200
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown
voltage
V(BR)CBO
–200
Collector to emitter breakdown V(BR)CEO
voltage
–200
Emitter to base breakdown
voltage
V(BR)EBO
–5
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
I CEO
hFE
VCE(sat)
100
Base to emitter voltage
Note: 1. Pulse test
VBE
Typ
Max Unit
—V
—V
—V
–500
250
–0.5
µA
V
–1.0 V
Test conditions
IC = –10 µA, IE = 0
IC = –0.5 mA, RBE =
IE = –10 µA, IC = 0
VCE = –200 V, RBE =
VCE = –12 V, IC = –2 mA*1
IC = –30 mA, IB = –3 mA*1
VCE = –12 V, IC = –2 mA*1
2

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Maximum Collector Dissipation
Curve
300
200
100
0 50 100 150
Ambient Temperature Ta (°C)
–100
–50
–20
Typical Transfer Characteristics
VCE = –12 V
Ta = 25°C
Pulse
–10
–5
–2
–1
0 –0.2 –0.4 –0.6 –0.8 –1.0
Base to Emitter Voltage VBE (V)
2SA1485
–100
–80
–60
Typical Output Characteristics
–10 –5.0
–2.0
–1.0
–0.5
–40 –0.2
–0.1 mA
–20
IB = 0
Ta = 25°C
0 –1 –2 –3 –4 –5
Collector to Emitter Voltage VCE (V)
1,000
300
100
DC Current Transfer Ratio vs.
Collector Current
VCE = –12 V
Pulse
Ta = 75°C
25
–25
30
10
–0.1 –0.3 –1.0 –3 –10 –30
Collector Current IC (mA)
–100
3