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AP09N70P/R
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Simple Drive Requirement
GG
D
D
S
S
BVDSS
RDS(ON)
ID
Description
AP09N70 series are specially designed as main switching devices for universal
90~265VAC off-line AC/DC converter applications.Both TO-220 and TO-262 G
type provide high blocking voltage to overcome voltage surge and sag in the D
toughest power system with the best combination of fast switching,ruggedized S
design and cost-effectiveness.
600/675V
0.75Ω
9A
TO-220(P)
The TO-220 and TO-262 package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power supplies
,DC-AC converters and high current high speed switching circuits.
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
VDS Drain-Source Voltage
VGS Gate-Source Voltage
- /A 600/675
± 30
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
EAR
TSTG
TJ
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
9
5
40
156
1.25
305
9
9
-55 to 150
-55 to 150
TO-262(R)
Units
V
V
A
A
A
W
W/
mJ
A
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
0.8
62
Unit
/W
/W
Data & specifications subject to change without notice
200218032
Free Datasheet http://www.datasheet4u.com/

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AP09N70P/R
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
/-
VGS=0V, ID=1mA
/A
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=4.5A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
VDS=VGS, ID=250uA
VDS=10V, ID=4.5A
VDS=600V, VGS=0V
VDS=480V, VGS=0V
VGS= ± 30V
ID=9A
VDS=480V
VGS=10V
VDD=300V
ID=9A
RG=10Ω,VGS=10V
RD=34Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=25V
f=1.0MHz
600 - - V
675 - - V
- 0.6 - V/
- - 0.75 Ω
2 - 4V
- 4.5 -
S
- - 10 uA
- - 100 uA
- - ±100 nA
- 44 - nC
- 11 - nC
- 12 - nC
- 19 - ns
- 21 - ns
- 56 - ns
- 24 - ns
- 2660 - pF
- 170 - pF
- 10 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage3
Test Conditions
VD=VG=0V , VS=1.5V
Tj=25, IS=9A, VGS=0V
Min. Typ. Max. Units
- - 9A
- - 40 A
- - 1.5 V
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=6.8mH , RG=25Ω , IAS=9A.
3.Pulse width <300us , duty cycle <2%.
Ordering Code
AP09N70P(/R)- X : X Denote BVDSS Grade
Blank = BVDSS 600V
A = BVDSS 675V

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AP09N70P/R
10
T C =25 o C
8
6
V G =10V
V G =6.0V
V G =5.0V
4
V G =4.5V
2
V G =4.0V
V G =3.5V
0
0 2 4 6 8 10 12
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
T C =150 o C
8
6
V G =10V
V G =6.0V
V G =5.0V
V G =4.5V
4
V G =4.0V
2
V G =3.5V
0
0 4 8 12 16 20 24
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0 50 100
T j , Junction Temperature ( o C)
150
Fig 3. Normalized BVDSS v.s. Junction
Temperature
2.8
I D =4.5A
2.4 V G =10V
2
1.6
1.2
0.8
0.4
0
-50 0 50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150

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AP09N70P/R
10
9
8
7
6
5
4
3
2
1
0
25 50 75 100 125 150
T c , Case Temperature ( C)
Fig 5. Maximum Drain Current v.s.
Case Temperature
150
100
50
0
0 50 100 150
Tc , Case Temperature( o C)
Fig 6. Typical Power Dissipation
100 1
10
1
T c =25 o C
Single Pulse
10us
100us
1ms
10ms
100ms
0.1
1
10 100 1000
V DS (V)
10000
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance

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AP09N70P/R
16
14 I D =9A
12
V DS =320V
10 V DS =400V
V DS =480V
8
6
4
2
0
0 10 20 30 40 50 60
Q G , Total Gate Charge (nC)
70
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
Ciss
Coss
100
Crss
1
1 5 9 13 17 21 25 29
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
T j = 150 o C
1
T j = 25 o C
0.1
0
0.2 0.4 0.6 0.8
1
V SD (V)
1.2 1.4 1.6
Fig 11. Forward Characteristic of
Reverse Diode
5
4
3
2
1
0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature