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AUTOMOTIVE GRADE
PD- 97755
AUIRLL014N
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dv/dt Rating
l 150°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to
Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
G
Description
Specifically designed for Automotive applications, this
cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined
with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide
variety of other applications.
HEXFET® Power MOSFET
D V(BR)DSS
55V
RDS(on) max. 0.14
S ID
2.0A
G
Gate
D
S
D
G
SOT-223
AUIRLL014N
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
VGS
EAS
IAR
EAR
Parameter
hContinuous Drain Current, VGS @ 10V
gContinuous Drain Current, VGS @ 10V
gContinuous Drain Current, VGS @ 10V
™Pulsed Drain Current
hPower Dissipation (PCB Mount)
gPower Dissipation (PCB Mount)
gLinear Derating Factor (PCB Mount)
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
ÙAvalanche Current
™gRepetitive Avalanche Energy
Max.
2.8
2.0
1.6
16
2.1
1.0
8.3
± 16
32
2.0
0.1
Units
A
W
mW/°C
V
mJ
A
mJ
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
gRJA Junction-to-Ambient (PCB mount, steady state)
hRJA Junction-to-Ambient (PCB mount, steady state)
-55 to + 150
Typ.
90
50
Max.
120
60
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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AUIRLL014N
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55 ––– ––– V VGS = 0V, ID = 250μA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.015 –––
––– ––– 0.14
––– ––– 0.20
––– ––– 0.28
V/°C
fff
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 2.0A
VGS = 5.0V, ID = 1.2A
VGS = 4.0V, ID = 1.0A
VGS(th)
Gate Threshold Voltage
1.0 ––– 2.0
V VDS = VGS, ID = 250μA
gfs Forward Transconductance
2.3 ––– ––– S VDS = 25V, ID = 1.0A
IDSS
Drain-to-Source Leakage Current
––– ––– 25
μA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 44V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 16V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
––– 9.5 14
ID = 2.0A
Qgs Gate-to-Source Charge
––– 1.1 1.7 nC VDS = 44V
fQgd
Gate-to-Drain ("Miller") Charge
––– 3.0 4.4
VGS = 10V, See Fig. 6 and 9
td(on) Turn-On Delay Time
––– 5.1 –––
VDD = 28V
tr Rise Time
––– 4.9 ––– ns ID = 2.0A
td(off) Turn-Off Delay Time
tf Fall Time
––– 14 –––
––– 2.9 –––
fRG = 6.0
RD = 14See Fig. 10
Ciss Input Capacitance
––– 230 –––
VGS = 0V
Coss Output Capacitance
––– 66 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 30 –––
ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
––– ––– 1.3
MOSFET symbol
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 16
A showing the
integral reverse
––– ––– 1.0
––– 41 61
––– 73 110
fp-n junction diode.
V TJ = 25°C, IS = 2.0A, VGS = 0V
fns TJ = 25°C, IF = 2.0A
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11)
‚ VDD = 25V, starting TJ = 25°C, L = 4.0mH
RG = 25, IAS = 4.0A. (See Figure 12)
ƒ ISD 2.0A, di/dt 170A/µs, VDD V(BR)DSS,
TJ 150°C .
„ Pulse width 300µs; duty cycle 2%.
… When mounted on FR-4 board using minimum recommended
footprint.
† When mounted on 1 inch square copper board, for comparison
with other SMD devices.
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AUIRLL014N
Qualification Information
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device Model
RoHS Compliant
Automotive
(per AEC-Q101) ††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
SOT-223
MSL1
Class M1A (+/- 50V)†††
AEC-Q101-002
Class H0 (+/- 250V)†††
AEC-Q101-001
Class C5 (+/- 1125V)†††
AEC-Q101-005
Yes
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
††† Highest passsing voltage.
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AUIRLL014N
100 VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
100 VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
1
3.0V
20μs PULSE WIDTH
TJ = 25°C
A
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
3.0V
20μs PULSE WIDTH
1
TJ = 150°C
A
0.1 1 10 100
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics,
Fig 2. Typical Output Characteristics,
100 2.0 ID = 2.0A
1.5
10
TJ = 25°C
TJ = 150°C
VDS = 25V
1
20μs PULSE WIDTH
A
3.0 4.0 5.0 6.0 7.0
VGS , Gate-to-Source Voltage (V)
1.0
0.5
0.0
-60
VGS = 10V A
-40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
4
Fig 4. Normalized On-Resistance
Vs. Temperature
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AUIRLL014N
400
V
C
GS
iss
=
=
0V,
Cgs
f = 1MHz
+ Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + C gd
300 Ciss
200 Coss
100 Crss
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
20 ID = 2.0A
16
V DS = 44V
V DS = 28V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 9
0A
0 3 6 9 12 15
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150°C
TJ = 25°C
1
0.1
0.4
VGS = 0V A
0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-to-Drain Voltage (V)
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10μs
10
100μs
1ms
1
10ms
TTAJ
= 25°C
= 150°C
Single Pulse
0.1
1
10
A
100
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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Fig 8. Maximum Safe Operating Area
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