DB2X41400L.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 DB2X41400L 데이타시트 다운로드

No Preview Available !

DReovcisNioon. . T3 T4-EA-12043
DB2X41400L
Silicon epitaxial planar type
For high frequency rectification
Features
Low forward voltage VF
Forward current (Average) IF(AV) = 2 A rectification is possible
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Product Standards
Schottky Barrier Diode
DB2X41400L
1.6
2
Unit: mm
0.13
Marking Symbol: 4P
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Rating
Reverse voltage
VR 40
Repetitive peak reverse voltage
Forward current (Average) *1
Non-repetitive peak forward surge current *2
Junction temperature
VRRM
IF(AV)
IFSM
Tj
40
2
15
125
Operating ambient temperature
Topr -40 to +85
Storage temperature
Tstg -55 to +125
Note: *1 For embedded alumina substrate
*2 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Unit
V
V
A
A
°C
°C
°C
1
0.55
0.8
1. Cathode
2. Anode
Panasonic
JEITA
Code
Mini2-F4-B
SC-109D
SOD-123
Internal Connection
2
1
Established : 2009-12-21
Revised : 2013-04-26
Page 1 of 4

No Preview Available !

DReovcisNioon. . T3 T4-EA-12043
Product Standards
Schottky Barrier Diode
DB2X41400L
Electrical Characteristics Ta = 25 C 3 C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
VF IF = 2A
0.42 0.49
V
Reverse current
IR VR = 40 V
200 μA
Terminal capacitance
Ct VR = 10 V, f = 1 MHz
70 pF
Reverse recovery time *1
trr
IF = IR = 100 mA, Irr = 10 mA
RL = 100 Ω
30 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on
the charge of a human body and the leakage of current from the operating equipment.
3. *1 trr test circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 μs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Established : 2009-12-21
Revised : 2013-04-26
Page 2 of 4

No Preview Available !

DReovcisNioon. . T3 T4-EA-12043
Product Standards
Schottky Barrier Diode
DB2X41400L
Technical Data ( reference )
1.E+01
1.E+00
1.E-01
85 °C
IF - VF
Ta = 125 °C
1.E-02
1.E-03
25 °C
1.E-04
-40 °C
1.E-05
0.0
0.1 0.2 0.3 0.4 0.5
Forward voltage VF (V)
0.6
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
1.E-08
0
IR - VR
Ta = 125 °C
85 °C
25 °C
-40 °C
10 20 30
Reverse voltage VR (V)
40
400
350
300
250
200
150
100
50
0
0
Ct - VR
Ta = 25 °C
f = 1 MHz
5 10 15 20 25 30 35 40
Reverse voltage VR (V)
1000
Rth - t
(2) (1)
100
Rth(j-l) = 30 °C/W
(3)
10
1
0.001 0.01
(1) Non-heat sink
(2) Mounted on glass epoxy print board.
(3) Mounted on alumina print board.
Board size : 50 mm × 50 mm x 0.8 mm
Solder in : 2 mm x 2 mm
0.1 1 10
Time t (s)
100 1000
2.5
tp/T
2
DC
1/2
1.5
IF(AV) - Tl
IF
tp
T
VR = 20 V
Tj = 125 °C
1
1/4
0.5
Sine Wave
0
0 25 50 75 100 125 150 175
Lead temperature Tl (°C)
1.5
IF
tp
T
1
0.5
PF(AV) - IF(AV)
Sine Wave
1/2
1/4
DC
0
0 0.5 1 1.5 2 2.5
Forward current (Average) IF(AV) (A)
Page 3 of 4
Established : 2009-12-21
Revised : 2013-04-26