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Data Sheet
μPA2766T1A
N-channel MOSFET
30 V , 130 A , 0.88 mΩ
R07DS0883EJ0102
Rev.1.02
Nov 28, 2012
Description
The μ PA2766T1A is N-channel MOS Field Effect Transistor designed for high current switching application.
Features
VDSS = 30 V (TA = 25°C)
Low on-state resistance
RDS(on) = 0.88 mΩ MAX. (VGS = 10 V, ID = 46 A)
RDS(on) = 1.82 mΩ MAX. (VGS = 4.5 V, ID = 39 A)
4.5 V Gate-drive available
Thin type surface mount package with heat spreader
Halogen free
8-pin HVSON(6051)
Ordering Information
Part No.
μ PA2766T1A-E2-AY1
LEAD PLATING
PACKING
Pure Sn
Tape 3000 p/reel
Note: 1. Pb-free (This product does not contain Pb in external electrode.)
Package
8-pin HVSON(6051)
0.1 g TYP.
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) 1
Total Power Dissipation 2
Total Power Dissipation (PW = 10 sec) 2
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current 3
Single Avalanche Energy 3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
PT3
Tch
Tstg
IAS
EAS
Ratings
30
±20
±130
±312
1.5
4.6
83
150
55 to +150
55
303
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Channel to Case(Drain) Thermal Resistance
Rth(ch-A)
Rth(ch-C)
83.3
1.5
°C/W
°C/W
Notes: 1. PW 10 μs, Duty Cycle 1%
2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH
R07DS0883EJ0102 Rev.1.02
Nov 28, 2012
Page 1 of 6
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μPA2766T1A
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance 1
Drain to Source On-state
Resistance 1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage 1
Reverse Recovery Time
Reverse Recovery Charge
Note: 1. Pulsed
Symbol
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
MIN.
1.0
35
TYP.
0.72
1.3
10850
4010
3340
50
160
380
365
257
33
103
0.80
215
415
MAX.
10
±100
2.5
0.88
1.82
1.5
Unit
μA
nA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
VDS = 30 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 39 A
VGS = 10 V, ID = 46 A
VGS = 4.5 V, ID = 39 A
VDS = 10 V,
VGS = 0 V,
f = 1 MHz
VDD = 15 V, ID = 39 A,
VGS = 10 V,
RG = 10 Ω
VDD = 15 V,
VGS = 10 V,
ID = 78 A
IF = 46A, VGS = 0 V
IF = 50 A, VGS = 0 V,
di/dt = 100 A/μs
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
R07DS0883EJ0102 Rev.1.02
Nov 28 2012
Page 2 of 6
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μPA2766T1A
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
1
ID(pulse)=312A
RDVSG(So=n)1L0iVmited
100ms10ms 1mPsW=200us
Power Dissipation Limited
0.1
0.01
Tc=25°C
Single Pulse
0.01 0.1
1
10 100
VDS - Drain to Source Voltage – V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Single pulse
100 Rth(ch-A) = 83.3 °C/W
10
Rth(ch-C) = 1.5 °C/W
1
0.1
0.01
100 μ
Rth(ch-A) : Mounted on a glass expoxy board of 25.4mm x 25.4mm 0.8mmt
1m
10 m
100 m
1
10 100
PW - Pulse Width - s
1000
DRAIN CURRENT(DC) vs. CASE TEMPERATURE
150
125
100
75
50
25
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
DRAIN CURRENT vs. DRAIN TO SOURCE
VOLTAGE
350
300
VGS=10V
250
VGS=4.5V
200
150
100
50
0
0
Pulsed
0.1 0.2 0.3 0.4 0.5 0.6 0.7
VDS - Drain to Source Voltage - V
R07DS0883EJ0102 Rev.1.02
Nov 28 2012
Page 3 of 6
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μPA2766T1A
FORWARD TRANSFER CHARACTERISTICS
100
10
1
TA=150°C
75°C
25°C
-55°C
0.1
0.01
VDS = 10V
0.001
Pulsed
0 12 34 5
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
100
TA=150°C
75°C
10 25°C
-55°C
1
0.1
0.01
0.01
VDS = 10V
Pulsed
0.1 1 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
5
ID=46A
Pulsed
4
3
2
1
0
0 5 10 15 20
VGS - Gate to Source Voltage - V
R07DS0883EJ0102 Rev.1.02
Nov 28 2012
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3
2
1
0
-50
VDS = 10V
ID=1.0mA
0 50 100 150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
2.5
2.0
1.5 VGS=4.5V
1.0
0.5
0.0
1
VGS=10V
Pulsed
10 100 1000
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
2.0
Pulsed
1.5
VGS=4.5V
ID=39A
1.0
VGS=10V
ID=46A
0.5
0.0
-50
0 50 100 150
Tch - Channel Temperature - °C
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μPA2766T1A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100,000
10,000
Ciss
1,000
Coss
Crss
VGS = 0V
f = 1.0MHz
100
0.1
1
10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT CHARACTERISTICS
12
10
VDD= 6V
8 15V
24V
6
4
2
ID=78A
0
0 40 80 120 160 200 240 280 320
QG - Gate Charge - nC
SWITCHING CHARACTERISTICS
10000
1000
VDD = 15V
VGS=10V
tf RG=10
td(of f )
tr
100
td(on)
10
0.1
1 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
VGS=10V
100 4.5V
10
0V
1
0.1
0.01
0
Pulsed
0.4 0.8 1.2
VF(S-D) - Source to Drain Voltage - V
R07DS0883EJ0102 Rev.1.02
Nov 28 2012
Page 5 of 6
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