2SA2048.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 2SA2048 데이타시트 다운로드

No Preview Available !

Transistor
2SA2048
Medium power transistor (30V, 1.0A)
2SA2048
!Features
1) High speed switching. (Tf : Typ. : 20ns at IC = 1.0A)
2) Low saturation voltage, typically
(Typ. : 150mV at IC = 500mA, IB = 50mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SC5730
!Applications
Small signal low frequency amplifier
High speed switching
!External dimensions (Units : mm)
TSMT3
2.8
1.6
(1)Base
(2)Emitter
(3)Collector
0.3 0.6
Each lead has same dimensions
Abbreviated symbol : UL
!Structure
PNP Silicon epitaxial planar transistor
!Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
2SA2048
Taping
TL
3000
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
ICP
Power dissipation
PC
Junction temperature
Tj
Range of storage temperature Tstg
1 Pw=10ms
2 Each terminal mounted on a recommended land
Limits
30
30
6
1.0
2.0
500
150
55~+150
Unit
V
V
V
A
A 1
mW 2
°C
°C
1/3

No Preview Available !

Transistor
2SA2048
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 30 − − V IC= −100µA
Collector-emitter breakdown voltage BVCEO 30 − − V IC= −1mA
Emitter-base breakdown voltage
BVEBO 6 − − V IE= −100µA
Collector cut-off current
ICBO − − −1.0 µA VCB= −20V
Emitter cut-off current
IEBO − − −1.0 µA VEB= −4V
Collector-emitter saturation voltage VCE (sat) − −150 300 mV IC= −500mA, IB= −50mA
DC current gain
hFE 120 390 VCE= −2V, IC= −10mA
Transition frequency
fT 350 MHz VCE= −10V, IE=100mA, f=10MHz
Collector output capacitance
Turn-on time
Storage time
Fall time
Cob
Ton
Tstg
Tf
10
30
100
20
pF VCB= −10V, IE=0A, f=1MHz
ns IC= −1.0A
ns
IB1= −0.1A
IB2=0.1A
ns VCC 25V
!hFE RANK
Q
120270
R
180390
!Electrical characteristic curves
10
10ms
1ms
1
100ms
0.1 DC
Single
non repetitive
0.01 Pulse
0.1
1
10 100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Safe Operating Area
1000
Tstg
100 Tf
Ton
Ta=25°C
VCC= −25V
IC/IB=10/1
10
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.2 Switching Time
1000
100
Ta=125°C
Ta=25°C
Ta= −40°C
10
VCE= −2V
1
0.001 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.3 DC Current Gain vs.
Collector Current (Ι)
1000
100
10
Ta=25°C
VCE= −5V
VCE= −3V
VCE= −2V
10
1
Ta=125°C
Ta=25°C
Ta= −40°C
0.1
IC/IB=10/1
10
1
IC/IB=20/1
IC/IB=10/1
0.1
Ta=25°C
1
0.001 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.4 DC Current Gain vs.
Collector Current (ΙΙ)
0.001.001 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-Emitter Saturation
Voltage vs.
Collector Current (Ι)
0.001.001 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-Emitter Saturation
Voltage vs.
Collector Current (ΙΙ)
2/3

No Preview Available !

Transistor
10
IC/IB=10/1
1
Ta= −40°C
0.1 Ta=25°C
Ta=125°C
0.01
0.001 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.7 Base-Emitter Saturation
Voltage vs.Collecter Current
10
Ta=125°C
Ta=25°C
1 Ta= −40°C
VCE=2V
0.1
0.01
0
0.5 1 1.5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.8 Grounded Emitter
Propagation Characteristics
2SA2048
1000
Ta=25°C
VCE= −10V
100
10
1
0.001 0.01
0.1
1
EMITTER CURRENT : IE (A)
10
Fig.9 Transition Frequency
100 Ta=25°C
f=1MHz
10
1
0.1 1 10 100
BASE TO COLLECTOR VOLTAGE : VCB (V)
Fig.10 Collector Output Capacitance
!Switching characteristics measurement circuits
VIN
PW
IB1
PW 50µs
DUTY CYCLE 1%
IB2
RL=25
IC
VCC 25V
BASE CURRENT
WAVEFORM
90%
COLLECTOR CURRENT
WAVEFORM
IB2
IB1
Ton Tstg Tf
10%
IC
3/3

No Preview Available !

Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0